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    Method of fabricating a CMOS transistor
    1.
    发明授权
    Method of fabricating a CMOS transistor 失效
    制造CMOS晶体管的方法

    公开(公告)号：US5856215A

    公开(公告)日：1999-01-05

    申请号：US701585

    申请日：1996-08-22

    申请人： Chae Hyun Jung

    发明人： Chae Hyun Jung

    IPC分类号： H01L29/739 ,  H01L21/8238 ,  H01L27/092

    CPC分类号： H01L21/823871 ,  H01L27/0921

    摘要： The present invention relates to a method of fabricating a CMOS transistor which can further reduce the size of a chip since it is not necessary to consider the metal contact process margin since a gate electrode of a PMOS transistor and a gate electrode of an NMOS transistor are directly connected with a polysilicon wiring during a process of forming the gate electrodes, which can prevent the formation of a parasitic transistor by forming a cell space region in an active region below the polysilicon wiring.

    摘要翻译： 本发明涉及一种制造CMOS晶体管的方法，其可以进一步减小芯片的尺寸，因为不需要考虑金属接触工艺裕度，因为PMOS晶体管的栅极电极和NMOS晶体管的栅极电极是 在形成栅极电极的过程中与多晶硅布线直接连接，这可以通过在多晶硅布线下面的有源区域中形成电池空间区域来防止形成寄生晶体管。

    Semiconductor memory device having a multi-step pulse generation circuit
    2.
    发明授权
    Semiconductor memory device having a multi-step pulse generation circuit 有权
    具有多级脉冲发生电路的半导体存储器件

    公开(公告)号：US6091613A

    公开(公告)日：2000-07-18

    申请号：US294349

    申请日：1999-04-20

    申请人： Tae Hum Yang ,  Chae Hyun Jung

    发明人： Tae Hum Yang ,  Chae Hyun Jung

    IPC分类号： H01L27/04 ,  H01L27/10 ,  H02M3/18

    CPC分类号： G11C5/147 ,  G11C16/30

    摘要： A voltage generation circuit of a semiconductor memory device has a charge pump circuit for supplying a voltage required to operate the semiconductor memory device; a voltage divide circuit having a plurality of capacitors and connected to the output of the charge pump circuit to divide the output of the charge pump circuit; an initialization means for discharging charges charged to the plurality of capacitors according to a reset signal; and a differential amplifier for controlling the charge pump circuit according to the result of comparison of the voltage divide circuit and a reference voltage.

    摘要翻译： 半导体存储器件的电压产生电路具有用于提供操作半导体存储器件所需的电压的电荷泵电路; 一个分压电路，具有多个电容器并连接到电荷泵电路的输出端以分频电荷泵电路的输出; 初始化装置，用于根据复位信号对充电到多个电容器的电荷进行放电; 以及差分放大器，用于根据分压电路的比较结果和参考电压来控制电荷泵电路。