公开(公告)号：US08791528B2

公开(公告)日：2014-07-29

申请号：US12861358

申请日：2010-08-23

Applicant: Chen-Tung Lin ,  Chih-Wei Chang ,  Chii-Ming Wu ,  Mei-Yun Wang ,  Chaing-Ming Chuang ,  Shau-Lin Shue

Inventor： Chen-Tung Lin ,  Chih-Wei Chang ,  Chii-Ming Wu ,  Mei-Yun Wang ,  Chaing-Ming Chuang ,  Shau-Lin Shue

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/28061 ,  H01L21/28097 ,  H01L21/28525 ,  H01L21/76877 ,  H01L21/76889 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.

Abstract translation: 一种制造微电子器件的方法，包括形成围绕位于衬底上的虚拟特征的介电层，去除虚拟特征以在电介质层中形成开口，以及形成符合开口的金属硅化物层。 然后可以将金属硅化物层退火。

公开(公告)号：US08202799B2

公开(公告)日：2012-06-19

申请号：US12833595

申请日：2010-07-09

Applicant: Chen-Tung Lin ,  Chih-Wei Chang ,  Chii-Ming Wu ,  Mei-Yun Wang ,  Chaing-Ming Chuang ,  Shau-Lin Shue

Inventor： Chen-Tung Lin ,  Chih-Wei Chang ,  Chii-Ming Wu ,  Mei-Yun Wang ,  Chaing-Ming Chuang ,  Shau-Lin Shue

IPC: H01L21/44 ,  H01L21/28 ,  H01L21/4763 ,  H01L21/461

CPC classification number: H01L29/66545 ,  H01L21/28061 ,  H01L21/28097 ,  H01L21/28525 ,  H01L21/76877 ,  H01L21/76889 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.

Abstract translation: 一种制造微电子器件的方法，包括形成围绕位于衬底上的虚拟特征的介电层，去除虚拟特征以在电介质层中形成开口，以及形成符合开口的金属硅化物层。 然后可以将金属硅化物层退火。