公开(公告)号：US08241836B2

公开(公告)日：2012-08-14

申请号：US12650838

申请日：2009-12-31

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： G03F7/20

CPC分类号： G03F1/36

摘要： A method of fabricating a line pattern extending in a first direction in a photoresist layer on a wafer by forming the photoresist layer on the wafer and implementing exposure on the wafer formed with the photoresist layer by using a photomask having a main pattern provided with a plurality of unit patterns slanted by a predetermined angle relative to the first direction and arranged along the first direction.

摘要翻译： 一种制造在晶片上的光致抗蚀剂层中沿着第一方向延伸的线图案的方法，该方法通过在晶片上形成光致抗蚀剂层并且通过使用具有主要图案的光掩模实现曝光，所述光掩模具有多个 的单元图案相对于第一方向倾斜预定角度并且沿着第一方向布置。

公开(公告)号：US08110507B2

公开(公告)日：2012-02-07

申请号：US12331669

申请日：2008-12-10

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： H01L21/302

CPC分类号： H01L21/0337

摘要： Disclosed here in is a method for patterning an active region in a semiconductor device using a space patterning process that includes forming a partition pattern having partition pattern elements arranged in a square shape on a semiconductor substrate; forming a spacer on side walls of the partition pattern; removing the partition pattern; separating the spacer into first and second spacer portions to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to form a trench, wherein portions of the semiconductor substrate overlapped with the first and second spacer portions define an active region.

摘要翻译： 这里公开的是使用空间图案化工艺在半导体器件中构图有源区的方法，该方法包括在半导体衬底上形成具有以正方形排列的分隔图形元素的分隔图案; 在分隔图案的侧壁上形成间隔物; 去除分区模式; 将间隔物分离成第一和第二间隔部分以暴露半导体衬底的一部分; 并且蚀刻半导体衬底的暴露部分以形成沟槽，其中与第一和第二间隔部分重叠的半导体衬底的部分限定有源区。

公开(公告)号：US08046723B2

公开(公告)日：2011-10-25

申请号：US12341980

申请日：2008-12-22

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： G06F9/455

CPC分类号： G06F17/5081 ,  G03F1/36

摘要： A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.

摘要翻译： 用间距改变部分校正布局的方法可以包括以相对大于第一图案的间距的间距设置具有第一图案和第二图案的间距改变部分的图案布局，从图案布局测量间距变化 通过对所述俯仰变化部的区域进行模拟动作来测定空间像强度的步骤; 基于形成图案的阈值强度值来修改音调变化部分中的布局的音调; 并且通过将经修改的布局的图像强度与参考区域的图像强度进行比较来处理布局校正以使音高存在于阈值范围内。

公开(公告)号：US07807322B2

公开(公告)日：2010-10-05

申请号：US11317500

申请日：2005-12-22

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： G03F9/00 ,  G03F7/22

CPC分类号： G03F1/50 ,  G03F7/70466

摘要： A photomask for double exposure, and a double exposure method using the same are disclosed. The photomask for double exposure comprises a mask substrate divided into first and second regions equally arranged to upper and lower sides on different sides, respectively, a first mask pattern formed on the first region of the mask substrate, and a second mask pattern formed on the second region of the mask substrate. The photomask and the double exposure method using the same enable a finer photoresist pattern to be formed on a semiconductor wafer, while minimizing reduction in yield and productivity due to misalignment and replacement.

摘要翻译： 公开了用于双重曝光的光掩模和使用其的双曝光方法。 用于双重曝光的光掩模包括分别被分成平均设置在不同侧上和下侧的第一和第二区域的掩模基板，形成在掩模基板的第一区域上的第一掩模图案和形成在掩模基板上的第二掩模图案 第二区域。 光掩模和使用该光掩模的双曝光方法能够在半导体晶片上形成更细的光致抗蚀剂图案，同时最小化由于不对准和替换而引起的产量和生产率的降低。

公开(公告)号：US20090317979A1

公开(公告)日：2009-12-24

申请号：US12331669

申请日：2008-12-10

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： H01L21/302 ,  H01L21/71

CPC分类号： H01L21/0337

摘要： Disclosed here in is a method for patterning an active region in a semiconductor device using a space patterning process that includes forming a partition pattern having partition pattern elements arranged in a square shape on a semiconductor substrate; forming a spacer on side walls of the partition pattern; removing the partition pattern; separating the spacer into first and second spacer portions to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to form a trench, wherein portions of the semiconductor substrate overlapped with the first and second spacer portions define an active region.

摘要翻译： 这里公开的是使用空间图案化工艺在半导体器件中构图有源区的方法，该方法包括在半导体衬底上形成具有以正方形排列的分隔图形元素的分隔图案; 在分隔图案的侧壁上形成间隔物; 去除分区模式; 将间隔物分离成第一和第二间隔部分以暴露半导体衬底的一部分; 并且蚀刻半导体衬底的暴露部分以形成沟槽，其中与第一和第二间隔部分重叠的半导体衬底的部分限定有源区。

公开(公告)号：US20100330465A1

公开(公告)日：2010-12-30

申请号：US12650838

申请日：2009-12-31

申请人： Chan Ha PARK

发明人： Chan Ha PARK

IPC分类号： G03F7/20 ,  G03F1/00

CPC分类号： G03F1/36

摘要： Disclosed is a photomask for forming a line-type pattern extending in a first direction, which includes a light transmitting substrate, and a main pattern corresponding to the line-type pattern provided with a plurality of unit patterns slanted relative to the first direction by a predetermined angle and arranged on the light transmitting substrate along the first direction.

摘要翻译： 公开了一种用于形成沿第一方向延伸的线型图案的光掩模，该光掩模包括透光基板和与设置有相对于第一方向倾斜的多个单元图案的线型图案相对应的主图案 并且沿着第一方向布置在透光基板上。

公开(公告)号：US07759021B2

公开(公告)日：2010-07-20

申请号：US11077296

申请日：2005-03-09

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： G03F1/00

CPC分类号： G03F1/34

摘要： A multi-transmission phase mask, and an exposure method using the same are disclosed. The mask comprises a transparent substrate, a light shielding film formed on the transparent substrate and defining a light transmission region and a light shielding region, and a phase inversion region formed on a predetermined portion of the light transmission region so as to allow exposure light to be transmitted therethrough with a phase of the light being inverted. In the method, a pattern of a semiconductor diode is exposed on a wafer by illuminating exposure light to the multi-transmission phase mask through a modified illumination system comprising at least two poles, each having a preset opening angle. According to the present invention, a defect wherein a pattern unit of a storage node contact pattern is not regularly opened on a wafer, or a defect wherein the pattern units are bridged to each other can be prevented from occurring.

摘要翻译： 公开了一种多透射相位掩模和使用其的曝光方法。 掩模包括透明基板，形成在透明基板上并限定透光区域和遮光区域的遮光膜，以及形成在光透射区域的预定部分上的相位反转区域，以允许曝光光 被反射的光的相位透过。 在该方法中，半导体二极管的图案通过经由包括至少两个极的修改的照明系统照射到多透射相位掩模而曝光在晶片上，每个具有预定的开启角。 根据本发明，可以防止存储节点接触图案的图案单元在晶片上不规则地打开的缺陷或者图案单元彼此桥接的缺陷。

公开(公告)号：US20090319970A1

公开(公告)日：2009-12-24

申请号：US12341980

申请日：2008-12-22

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36

摘要： A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.

摘要翻译： 用间距改变部分校正布局的方法可以包括以相对大于第一图案的间距的间距设置具有第一图案和第二图案的间距变化部分的图案布局，从图案布局测量间距变化 通过对所述俯仰变化部的区域进行模拟动作来测定空间像强度的步骤; 基于形成图案的阈值强度值来修改音调变化部分中的布局的音调; 并且通过将经修改的布局的图像强度与参考区域的图像强度进行比较来处理布局校正以使音高存在于阈值范围内。

公开(公告)号：US07427456B2

公开(公告)日：2008-09-23

申请号：US10905607

申请日：2005-01-12

申请人： Chan Ha Park

发明人： Chan Ha Park

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A layout of vertical patterns in a mask used in a dipole exposure apparatus employing a dipole as an aperture, including the vertical patterns disposed vertically to the dipole, and tabs, having critical dimensions broader than those of the vertical patterns, crossing edges of the vertical patterns. The tabs having critical dimensions broader than those of the vertical patterns are additionally inserted into the edges of the vertical patterns disposed vertically to the dipole, thereby minimizing the difference in critical dimensions between central and edge portions of the vertical patterns so that the vertical patterns maintain uniform fine critical dimensions.

摘要翻译： 在使用偶极子作为孔径的偶极子曝光装置中使用的掩模中的垂直图案的布局，包括垂直于偶极子垂直设置的垂直图案，以及具有比垂直图案的临界尺寸更宽的垂直图案的横向图案， 模式。 具有比垂直图案的尺寸更宽的临界尺寸的突片另外插入到垂直于偶极子设置的垂直图案的边缘中，从而最小化垂直图案的中心部分和边缘部分之间的临界尺寸的差异，使得垂直图案保持 均匀的细关键尺寸。

公开(公告)号：US20060063075A1

公开(公告)日：2006-03-23

申请号：US10905607

申请日：2005-01-12

申请人： Chan-Ha Park

发明人： Chan-Ha Park

IPC分类号： G03C5/00 ,  G03B27/42 ,  G03F1/00

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A layout of vertical patterns in a mask used in a dipole exposure apparatus employing a dipole as an aperture, including the vertical patterns disposed vertically to the dipole, and tabs, having critical dimensions broader than those of the vertical patterns, crossing edges of the vertical patterns. The tabs having critical dimensions broader than those of the vertical patterns are additionally inserted into the edges of the vertical patterns disposed vertically to the dipole, thereby minimizing the difference in critical dimensions between central and edge portions of the vertical patterns so that the vertical patterns maintain uniform fine critical dimensions.

摘要翻译： 在使用偶极子作为孔径的偶极子曝光装置中使用的掩模中的垂直图案的布局，包括垂直于偶极子垂直设置的垂直图案，以及具有比垂直图案的临界尺寸更宽的垂直图案的横向图案， 模式。 具有比垂直图案的尺寸更宽的临界尺寸的突片另外插入到垂直于偶极子设置的垂直图案的边缘中，从而最小化垂直图案的中心部分和边缘部分之间的临界尺寸的差异，使得垂直图案保持 均匀的细关键尺寸。