Light-emitting diode and method for manufacturing the same
    1.
    发明授权
    Light-emitting diode and method for manufacturing the same 有权
    发光二极管及其制造方法

    公开(公告)号:US07439091B2

    公开(公告)日:2008-10-21

    申请号:US11709543

    申请日:2007-02-22

    IPC分类号: H01L21/00

    摘要: A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.

    摘要翻译: 对发光二极管(LED)及其制造方法进行说明。 LED的制造方法包括以下步骤。 提供了一种光源外延结构,其中光源外延结构具有在相对侧上的第一表面和第二表面,并且衬底被放置在光源外延结构的第一表面上。 在发光体外延结构的第二表面上形成金属层。 进行阳极氧化步骤以氧化金属层,以形成金属氧化物层。 执行蚀刻步骤以去除金属氧化物层的一部分,以在金属氧化物层中形成多个孔。

    LIGHT-EMITTING DIODE
    2.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号:US20080308834A1

    公开(公告)日:2008-12-18

    申请号:US12200019

    申请日:2008-08-28

    IPC分类号: H01L33/00

    摘要: A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.

    摘要翻译: 提供了一种发光二极管(LED),其中LED包括外延结构,结合层和复合衬底。 复合衬底包括具有图案的图案化衬底和设置在图案化衬底周围的导电材料层。 在复合基板上形成接合层。 在结合层上形成外延结构。

    Light-emitting diode and method for manufacturing the same
    3.
    发明申请
    Light-emitting diode and method for manufacturing the same 有权
    发光二极管及其制造方法

    公开(公告)号:US20070221927A1

    公开(公告)日:2007-09-27

    申请号:US11709543

    申请日:2007-02-22

    IPC分类号: H01L33/00 H01L21/00

    摘要: A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.

    摘要翻译: 对发光二极管(LED)及其制造方法进行说明。 LED的制造方法包括以下步骤。 提供了一种光源外延结构,其中光源外延结构具有在相对侧上的第一表面和第二表面,并且衬底被放置在光源外延结构的第一表面上。 在发光体外延结构的第二表面上形成金属层。 进行阳极氧化步骤以氧化金属层,以形成金属氧化物层。 执行蚀刻步骤以去除金属氧化物层的一部分,以在金属氧化物层中形成多个孔。

    Light-emitting diode and manufacturing method thereof
    4.
    发明申请
    Light-emitting diode and manufacturing method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US20060255356A1

    公开(公告)日:2006-11-16

    申请号:US11232633

    申请日:2005-09-22

    IPC分类号: H01L33/00 H01L21/00

    摘要: A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.

    摘要翻译: 提供了一种发光二极管及其制造方法,其中发光二极管包括外延结构,接合层和复合衬底。 位于外延结构一侧的结合层用于将复合衬底粘附到外延结构上。 复合衬底包括穿过多个开硅硅的图案化硅层和覆盖图案化硅层的金属层,其中金属层的一部分被填充到开口中并与接合层接触。

    Micro coaxial connector
    5.
    发明授权
    Micro coaxial connector 失效
    微同轴连接器

    公开(公告)号:US06971913B1

    公开(公告)日:2005-12-06

    申请号:US10880496

    申请日:2004-07-01

    申请人: Chang-Hsing Chu

    发明人: Chang-Hsing Chu

    IPC分类号: H01R9/05 H01R13/56 H01R13/646

    摘要: The micro coaxial connector includes a signal terminal, a main body, and two grounding elements. The signal terminal has a pair of tag-like contact arms and bending arms at a front and rear end thereof, and a strip plane at a middle section thereof. The contact arms are for contacting with a base of a printed circuit board (PCB). The main body is for receiving the signal terminal and serving as an insulation. The two grounding elements are separated designs. The cylindrical-shaped first grounding element is for receiving and fastening the main body, and has a pair of extension arms for providing the coaxial cable with suitable clamping forces. The second grounding element is a cover-like body, and has a strip-like projection for increasing strength against bending of the second grounding element and preventing loosening of components.

    摘要翻译: 微型同轴连接器包括信号端子,主体和两个接地元件。 信号端子在其前端和后端具有一对标签状接触臂和弯曲臂,在其中间部分具有带状平面。 接触臂用于与印刷电路板(PCB)的基座接触。 主体用于接收信号端子并用作绝缘体。 两个接地元件是分离的设计。 圆柱形的第一接地元件用于接收和紧固主体,并且具有一对延伸臂,用于为同轴电缆提供合适的夹紧力。 第二接地元件是盖状体,并且具有带状突起,用于提高第二接地元件的弯曲强度并防止部件松动。

    Micro coaxial cable connecting device
    6.
    发明授权
    Micro coaxial cable connecting device 失效
    微同轴电缆连接装置

    公开(公告)号:US06916201B1

    公开(公告)日:2005-07-12

    申请号:US10790811

    申请日:2004-03-03

    申请人: Chang-Hsing Chu

    发明人: Chang-Hsing Chu

    IPC分类号: H01R9/05 H01R13/646 H01R9/07

    摘要: A micro coaxial cable connecting device, with application to cable to cable inter-connecting of micro coaxial cables, whereby the connecting device is separately configured as a female terminal connector and a male terminal connector, wherein the female terminal connector is assembled to include a signal terminal, an insulator, a conductor and a cover; and the male terminal connector is assembled to include a socket terminal, an insulator base and a casing. Structural design of the male terminal connector and the female terminal connector allows utilizing a lap joint method to connect said two connectors, and thereby enables reduction in production costs of connecting devices, provides enhancement in productivity, and answers to industrial utilization of such.

    摘要翻译: 一种微同轴电缆连接装置,其应用于电缆与微型同轴电缆的电缆互连,由此连接装置分别构造为阴端子连接器和阳端子连接器,其中母端子连接器组装成包括信号 端子,绝缘体,导体和盖子; 并且阳端子连接器组装成包括插座端子,绝缘体基座和壳体。 公端子连接器和阴端子连接器的结构设计允许利用搭接方式连接所述两个连接器,从而能够降低连接装置的生产成本,提高生产率,并且解决工业利用这些问题。

    Light-emitting diode
    7.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号:US07982238B2

    公开(公告)日:2011-07-19

    申请号:US12200019

    申请日:2008-08-28

    IPC分类号: H01L33/00

    摘要: A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.

    摘要翻译: 提供了一种发光二极管(LED),其中LED包括外延结构,结合层和复合衬底。 复合衬底包括具有图案的图案化衬底和设置在图案化衬底周围的导电材料层。 接合层形成在复合基板上。 在结合层上形成外延结构。

    Light-emitting diode and manufacturing method thereof
    8.
    发明授权
    Light-emitting diode and manufacturing method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US07432117B2

    公开(公告)日:2008-10-07

    申请号:US11232633

    申请日:2005-09-22

    IPC分类号: H01L21/00

    摘要: A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.

    摘要翻译: 提供了一种发光二极管及其制造方法,其中发光二极管包括外延结构,接合层和复合衬底。 位于外延结构一侧的结合层用于将复合衬底粘附到外延结构上。 复合衬底包括穿过多个开硅硅的图案化硅层和覆盖图案化硅层的金属层,其中金属层的一部分被填充到开口中并与接合层接触。