公开(公告)号：US06350390B1

公开(公告)日：2002-02-26

申请号：US09507808

申请日：2000-02-22

申请人： Chi Kang Liu ,  Chang Jen Shieh ,  Pei Hung Chen

发明人： Chi Kang Liu ,  Chang Jen Shieh ,  Pei Hung Chen

IPC分类号： G05D500

CPC分类号： G05D5/03 ,  H01L21/31144 ,  H01L21/32139

摘要： A feed forward method for forming within a microelectronic fabrication a patterned target layer with controlled critical dimension (CD) first provides a substrate having formed thereover a blanket target layer, in turn having formed thereover a blanket anti-reflective coating (ARC) layer, in turn having formed thereover a paltered photoresist layer. There is then established a correlation which describes an interrelation between the patterned photoresist layer linewidth and a plasma species concentration within a plasma for forming from the blanket anti-reflective coating (ARC) layer a patterned anti-reflective coating (ARC) layer such that a patterned target layer subsequently formed from the blanket target layer is formed with a patterned target layer measured linewidth closer to a patterned target layer target linewidth The linewidth of the patterned photoresist layer is then measured and there is determined a deviation of the patterned photoresist measured linewidth from a patterned photoresist layer target linewidth. The plasma species concentration is then adjusted when etching the blanket anti-reflective coating (ARC) layer to form the patterned anti-reflective coating (ARC) layer such that the patterned target layer may be formed with the patterned target layer measured linewidth closer to a patterned target layer target linewidth.

摘要翻译： 用于在微电子制造中形成具有受控临界尺寸（CD）的图案化目标层的前馈方法首先提供了在其上形成有覆盖目标层的基底，其又形成在覆盖层抗反射涂层（ARC）层上， 在其上形成有改变的光致抗蚀剂层。 然后建立描述图案化光致抗蚀剂层线宽和等离子体中等离子体物质浓度之间的相互关系的相关性，以从毯状抗反射涂层（ARC）层形成图案化抗反射涂层（ARC）层，使得 随后由覆盖目标层形成的图案化目标层形成有图案化目标层，测量的线宽更接近图案化目标层目标线宽图案化光致抗蚀剂层的线宽然后被测量，并且确定图案化的光致抗蚀剂测量的线宽与 图案化的光刻胶层目标线宽。 然后在蚀刻毯子抗反射涂层（ARC）层时调整等离子体物质浓度，以形成图案化抗反射涂层（ARC）层，使得图案化目标层可以形成有图案化目标层，测量的线宽更接近于 图案目标层目标线宽。

公开(公告)号：US06872667B1

公开(公告)日：2005-03-29

申请号：US10721979

申请日：2003-11-25

申请人： Chang-Jen Shieh ,  Hung-Cheng Sung

发明人： Chang-Jen Shieh ,  Hung-Cheng Sung

IPC分类号： H01L21/311 ,  H01L21/762 ,  H01L21/8247 ,  H01L27/105

CPC分类号： H01L27/11526 ,  H01L21/31116 ,  H01L21/76229 ,  H01L27/105 ,  H01L27/11534

摘要： Methods of fabricating semiconductor devices using separate periphery and cell region etching steps are provided. A substrate is provided, wherein the substrate has a cell region and a periphery region separated by a shallow trench isolation (STI). The STI is filled with a dielectric material. A protective layer is formed on the periphery region, allowing semiconductor structures to be formed in the cell region without damaging the surface of the periphery region. Upon forming the semiconductor structures in the cell region, a portion of the dielectric material in the STI adjacent to the cell region is partially removed. The dielectric material adjacent to the periphery region is substantially unetched.

摘要翻译： 提供了使用分离的周边和单元区域蚀刻步骤制造半导体器件的方法。 提供了一种衬底，其中衬底具有由浅沟槽隔离（STI）隔开的单元区域和外围区域。 STI填充有电介质材料。 在周边区域形成有保护层，能够在电池区域内形成半导体结构体而不会损伤周边区域的表面。 在单元区域中形成半导体结构时，部分去除与单元区域相邻的STI中的电介质材料的一部分。 邻近周边区域的电介质材料基本上未被蚀刻。