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    Chemical mechanical polishing system and method for optimization and control of film removal uniformity
    2.
    发明授权
    Chemical mechanical polishing system and method for optimization and control of film removal uniformity 失效
    化学机械抛光系统和优化和控制膜去除均匀性的方法

    公开(公告)号：US5653622A

    公开(公告)日：1997-08-05

    申请号：US506664

    申请日：1995-07-25

    申请人： Charles Drill ,  Milind G. Weling

    发明人： Charles Drill ,  Milind G. Weling

    IPC分类号： B24B37/10 ,  B24B49/16 ,  B24B53/007 ,  B24B53/017 ,  B24B49/00 ,  B24B7/22

    CPC分类号： B24B37/107 ,  B24B49/16 ,  B24B53/017

    摘要： A chemical mechanical polishing system for processing semiconductor wafers has a polishing arm and carrier assembly that press the topside surface of a semiconductor wafer against a motor driven, rotating polishing pad. Improved uniformity of material removal, as well as improved stability of material removal rate, is achieved through the use of a controller that applies a variable wafer backside pressure to the wafers being polished. More specifically, a control subsystem maintains a wafer count, corresponding to how many wafers have been polished by the polishing pad. The control subsystem regulates the backside pressure applied to each wafer in accordance with a predetermined function such that the backside pressure increases monotonically as the wafer count increases. In the preferred embodiment, the control system regulates the backside pressure in accordance with a linear function of the form: Backside Pressure=A+(B.times.Wafer Count). Whenever a new polishing pad is mounted, the wafer count value is reset to a predefined minimum wafer count value and the backside pressure for the next wafer to be polished is reset to a preset minimum backside pressure value.

    摘要翻译： 用于处理半导体晶片的化学机械抛光系统具有抛光臂和载体组件，其将半导体晶片的顶侧表面抵靠电动机驱动的旋转抛光垫。 通过使用向待抛光的晶片施加可变晶片背面压力的控制器来实现材料去除的均匀性提高以及改善材料去除速率的稳定性。 更具体地说，控制子系统保持晶片计数，对应于由抛光垫抛光了多少个晶片。 控制子系统根据预定功能调节施加到每个晶片的背侧压力，使得当晶片计数增加时背侧压力单调增加。 在优选实施例中，控制系统根据以下形式的线性函数来调节背侧压力：背压= A +（BxWafer计数）。 每当安装新的抛光垫时，将晶片计数值重新设置为预定的最小晶片计数值，并将待抛光的下一个晶片的背侧压力重置为预设的最小背侧压力值。