METHOD OF MAKING PHOTOVOLTAIC DEVICE THROUGH TAILORED HEAT TREATMENT
    2.
    发明申请
    METHOD OF MAKING PHOTOVOLTAIC DEVICE THROUGH TAILORED HEAT TREATMENT 审中-公开
    通过定制热处理制造光伏器件的方法

    公开(公告)号:US20150280050A1

    公开(公告)日:2015-10-01

    申请号:US14227063

    申请日:2014-03-27

    申请人: Chen-Yun Wang

    发明人: Chen-Yun Wang

    IPC分类号: H01L31/18

    摘要: A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate of the photovoltaic device, a step of forming a buffer layer over the absorber layer, and a step of pre-heating the photovoltaic device at a first heating rate to a selected temperature. The first heating rate being higher than 5° C./minute. The method further includes a step of forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating the photovoltaic device.

    摘要翻译: 制造光伏器件的方法包括在光电器件的衬底上形成吸收层的步骤,在吸收层上形成缓冲层的步骤,以及以第一加热速率预热光伏器件的步骤 到选定的温度。 第一次加热速度高于5℃/分。 该方法还包括在预热光伏器件的步骤之后,在选定温度下在缓冲层上形成前接触层的步骤。