公开(公告)号：US20100146322A1

公开(公告)日：2010-06-10

申请号：US12432135

申请日：2009-04-29

Applicant: Chih-Cheng CHIEN ,  Chih-Cheng Chien

Inventor： Chih-Cheng CHIEN ,  Chih-Cheng Chien

IPC: G06F1/04 ,  G06F1/24 ,  G06F9/445

CPC classification number: G06F1/08 ,  G06F9/4401

Abstract: A method for overclocking a central processing unit (CPU) of a computer motherboard is disclosed. Step A is to set a second frequency of front side bus (FSB) by an operating interface of BIOS. Step B is to determine FSB frequency Fn at each of N stages according to a difference between a first frequency and the second frequency. Step C is to load the CPU with an operating system by booting the CPU at the first frequency of FSB, and send an interruption signal to the CPU from a chipset at predetermined intervals upon completion of the loading of the operating system so as to allow the BIOS to gain control over the CPU, and execute step D by the CPU on each of N occasions of interruption until the FSB frequency of the CPU is changed to the second frequency. Step D is to execute the BIOS by the CPU on the nth occasion of interruption such that the CPU operates at the FSB frequency Fn, and allow the operating system to resume control over the CPU.

Abstract translation: 公开了一种用于超频计算机主板的中央处理单元（CPU）的方法。 步骤A是通过BIOS的操作界面设置前端总线（FSB）的第二频率。 步骤B是根据第一频率和第二频率之间的差来确定每个N级的FSB频率Fn。 步骤C是通过以FSB的第一频率引导CPU来加载具有操作系统的CPU，并且在操作系统的加载完成时以预定间隔从芯片组向CPU发送中断信号，以便允许 BIOS以获得对CPU的控制，并且在N次中断之后执行CPU的步骤D，直到CPU的FSB频率变为第二频率。 步骤D是在中断的第n次时由CPU执行BIOS，使得CPU以FSB频率Fn操作，并允许操作系统恢复对CPU的控制。

公开(公告)号：US20240103234A1

公开(公告)日：2024-03-28

申请号：US18336061

申请日：2023-06-16

Applicant: CHIH-CHENG CHIEN ,  TSO-HAN CHIEN

Inventor： CHIH-CHENG CHIEN ,  TSO-HAN CHIEN

IPC: G02B6/38

CPC classification number: G02B6/3885 ,  G02B6/3825 ,  G02B6/3897

Abstract: A ferrule of optical cable with multi cores includes a casing and at least one main body. The main body is connected to the casing. A plurality of main body through-holes are formed on the at least one main body. The casing and the main body are separately formed and fixed to each other. A plurality of optical fibers of a fiber optical cable pass through the main body through-holes and extrude out of the casing.

公开(公告)号：US20200372826A1

公开(公告)日：2020-11-26

申请号：US16872257

申请日：2020-05-11

Applicant: Tso-Cheng Chien

Inventor： Tso-Cheng Chien

IPC: G09B19/00 ,  G06F16/51 ,  G06T11/00 ,  H04N5/92

Abstract: The present invention relates to novel methods, tools and systems that provide an individual with the ability to define a personalized portion and evaluate food in real-world situations to offer guidance to the individual on the amount of the food the individual should eat as part of a controlled and consistent diet based on food volume. In particular, the methods, tools and systems of the present invention define food quanta personalized to the user, and further utilizes augmented reality to overlay a selected food quantum on real-world food in order to guide the user to select a definable food quantum, e.g., to achieve a dietary goal.

公开(公告)号：US20170156946A1

公开(公告)日：2017-06-08

申请号：US15194786

申请日：2016-06-28

Applicant: Yuan-Cheng CHIEN

Inventor： Yuan-Cheng CHIEN

IPC: A61F13/531 ,  A61F13/15 ,  A61F13/47

CPC classification number: A61F13/531 ,  A61F13/15203 ,  A61F13/47 ,  A61F13/4704 ,  A61F13/47218 ,  A61F13/535 ,  A61F13/539 ,  A61F2013/15552 ,  A61F2013/4708 ,  A61F2013/530029 ,  A61F2013/530182 ,  A61F2013/53035 ,  A61F2013/530875

Abstract: A sanitary napkin includes: a substrate having a base layer and an absorbent body mounted on the base layer, and defining a longitudinal direction (X) and a width direction (Y) perpendicular to the longitudinal direction (X); and at least one absorbing unit including a plurality of connecting portions connected to the absorbent body and spaced apart among one another in the longitudinal direction (X), an absorbing portion extending in the longitudinal direction (X) and connected to the connecting portions, and a plurality of cotton fluffs disposed on the absorbing portion. The absorbent body, the connecting portions and the absorbing portion cooperatively define a plurality of aerated channels extending in the width direction (Y).

公开(公告)号：US20170067610A1

公开(公告)日：2017-03-09

申请号：US14848337

申请日：2015-09-09

Applicant: Yi-Chien Lo ,  Chien-Jung Tseng ,  Kuo-Pin Wu ,  Cheng-Chien Chen

Inventor： Yi-Chien Lo ,  Chien-Jung Tseng ,  Kuo-Pin Wu ,  Cheng-Chien Chen

IPC: F21S8/10 ,  F21V8/00

CPC classification number: F21S48/1283 ,  F21S41/143 ,  F21S41/24 ,  F21S41/255 ,  F21S41/27 ,  F21S41/275 ,  F21Y2115/10 ,  G02B6/0045 ,  G02B6/0046 ,  G02B6/0096

Abstract: An automobile lamp having a lighting pattern with a light-and-shade contrast comprises a light guiding pipe, a projecting lens, and a lightening body. Two ends of the light guiding pipe are respectively arranged a light input surface and a light output portion. A light refracting groove is arranged at a bottom surface formed in front of the light output portion and includes a long inclined surface and a short inclined surface. The projecting lens has a light input surface and an arc light output surface. The lightening body projects an original light source opposite to the light input surface of the light guiding pipe. One part of lights of the lightening body is guided to the projecting lens for projecting a lighting pattern with a light-and-shad cut-off line, and the other part of lights is guided toward the lighting pattern to partially overlap the lighting pattern.

Abstract translation: 具有光照对比度的照明图案的汽车用灯具包括导光管，投影透镜和发光体。 导光管的两端分别设置有光输入表面和光输出部分。 光折射槽配置在形成于光输出部前方的底面，具有长倾斜面和短倾斜面。 投影透镜具有光输入面和弧光输出面。 发光体投射与导光管的光输入面相反的原始光源。 将发光体的一部分光引导到投影透镜，用于用光和阴极线切断线投射照明图案，另一部分灯被引导到照明图案以与照明图案部分重叠。

公开(公告)号：US09200667B1

公开(公告)日：2015-12-01

申请号：US14476011

申请日：2014-09-03

Applicant: Cheng-Chien Hsu

Inventor： Cheng-Chien Hsu

IPC: A45D42/14 ,  F16B47/00 ,  F16M13/02

CPC classification number: F16B47/00 ,  F16M13/02

Abstract: The invention is related to a suction cup which comprises a main body shell, a base plate, a resilient member, an actuating pin, a pushing block, an unlocking block, and a retaining pin. The main body shell comprises an upper compartment and a lower compartment. The base plate comprises a fixed rod, and the resilient member is mounted around the fixed rod. The base plate is inserted into the lower compartment of the main body shell. The pushing block comprises a space and is inserted into the upper compartment. The unlocking block comprises a notch and is inserted into the space. The actuating pin is inserted into the upper compartment of the main body shell and the space of the pushing block. The retaining pin is inserted into the notch of the unlocking block and the space of the pushing block.

Abstract translation: 本发明涉及一种吸盘，其包括主体外壳，底板，弹性构件，致动销，推动块，解锁块和保持销。 主体壳体包括上隔室和下隔室。 基板包括固定杆，并且弹性构件围绕固定杆安装。 基板插入主体外壳的下部隔间。 推动块包括一个空间并被插入到上隔室中。 解锁块包括凹口并插入到该空间中。 驱动销插入主体外壳的上部隔间和推动块的空间。 保持销插入解锁块的凹口和推动块的空间。

公开(公告)号：US08962433B2

公开(公告)日：2015-02-24

申请号：US13494016

申请日：2012-06-12

Applicant: Chin-I Liao ,  Chin-Cheng Chien

Inventor： Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L21/336

CPC classification number: H01L29/7834 ,  H01L29/4966 ,  H01L29/66636 ,  H01L29/7848

Abstract: A MOS transistor process includes the following steps. A gate structure is formed on a substrate. A source/drain is formed in the substrate beside the gate structure. After the source/drain is formed, (1) at least a recess is formed in the substrate beside the gate structure. An epitaxial structure is formed in the recess. (2) A cleaning process may be performed to clean the surface of the substrate beside the gate structure. An epitaxial structure is formed in the substrate beside the gate structure.

Abstract translation: MOS晶体管工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的衬底中形成源极/漏极。 在形成源极/漏极之后，（1）在栅极结构旁边的基板中形成至少一个凹部。 在凹部中形成外延结构。 （2）可以进行清洁处理以清洁栅极结构旁边的基板的表面。 在栅极结构旁边的衬底中形成外延结构。

公开(公告)号：US08921206B2

公开(公告)日：2014-12-30

申请号：US13308513

申请日：2011-11-30

Applicant: Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

Inventor： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L21/36

CPC classification number: H01L29/6656 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7847 ,  H01L29/7848

Abstract: First, a substrate with a recess is provided in a semiconductor process. Second, an embedded SiGe layer is formed in the substrate. The embedded SiGe layer includes an epitaxial SiGe material which fills up the recess. Then, a pre-amorphization implant (PAI) procedure is carried out on the embedded SiGe layer to form an amorphous region. Next, a source/drain implanting procedure is carried out on the embedded SiGe layer to form a source doping region and a drain doping region. Later, a source/drain annealing procedure is carried out to form a source and a drain in the substrate. At least one of the pre-amorphization implant procedure and the source/drain implanting procedure is carried out in a cryogenic procedure below −30° C.

Abstract translation: 首先，在半导体工艺中设置具有凹部的基板。 第二，在衬底中形成嵌入的SiGe层。 嵌入的SiGe层包括填充凹槽的外延SiGe材料。 然后，在嵌入的SiGe层上进行预非晶化植入（PAI）工艺以形成非晶区域。 接下来，在嵌入的SiGe层上进行源极/漏极注入工艺以形成源极掺杂区域和漏极掺杂区域。 之后，进行源极/漏极退火处理以在衬底中形成源极和漏极。 前非晶化植入程序和源极/漏极注入程序中的至少一个在低于-30℃的低温过程中进行。

公开(公告)号：US08822284B2

公开(公告)日：2014-09-02

申请号：US13370231

申请日：2012-02-09

Applicant: Chin-Fu Lin ,  Chin-Cheng Chien ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Chih-Chien Liu

Inventor： Chin-Fu Lin ,  Chin-Cheng Chien ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Chih-Chien Liu

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/318 ,  H01L21/314

CPC classification number: H01L29/785 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/764 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L27/10879 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795

Abstract: A method for fabricating FinFETs is described. A semiconductor substrate is patterned to form odd fins. Spacers are formed on the substrate and on the sidewalls of the odd fins, wherein each spacer has a substantially vertical sidewall. Even fins are then formed on the substrate between the spacers. A semiconductor structure for forming FinFETs is also described, which is fabricated using the above method.

Abstract translation: 描述了制造FinFET的方法。 图案化半导体衬底以形成奇数鳍片。 间隔件形成在基底上和奇数翅片的侧壁上，其中每个间隔件具有基本垂直的侧壁。 然后在间隔件之间的基板上均匀形成翅片。 还描述了用于形成FinFET的半导体结构，其使用上述方法制造。

公开(公告)号：US08736289B2

公开(公告)日：2014-05-27

申请号：US13609268

申请日：2012-09-11

Applicant: Hong-Chan Chang ,  Cheng-Chien Kuo ,  Chien Huangli

Inventor： Hong-Chan Chang ,  Cheng-Chien Kuo ,  Chien Huangli

IPC: G01R31/10

CPC classification number: G01R31/40

Abstract: A new electrical recycling apparatus for AC/DC power converter is provided to recycle the electricity in direct current to the input ends of the power converter to be tested to save a stage of power converter and avoid the complicated standard and requirement that feed the electricity to the mains supply.

Abstract translation: 提供一种用于AC / DC电力转换器的新型电气回收设备，用于将直流电流再循环到待测功率转换器的输入端，以节省电力转换器的一级，并避免将电力供给的复杂标准和要求 电源。