利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.013 秒)

    Semiconductor process
    1.
    发明授权
    Semiconductor process 有权
    半导体工艺

    公开(公告)号：US08921206B2

    公开(公告)日：2014-12-30

    申请号：US13308513

    申请日：2011-11-30

    申请人： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

    发明人： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

    IPC分类号： H01L21/36

    CPC分类号： H01L29/6656 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7847 ,  H01L29/7848

    摘要： First, a substrate with a recess is provided in a semiconductor process. Second, an embedded SiGe layer is formed in the substrate. The embedded SiGe layer includes an epitaxial SiGe material which fills up the recess. Then, a pre-amorphization implant (PAI) procedure is carried out on the embedded SiGe layer to form an amorphous region. Next, a source/drain implanting procedure is carried out on the embedded SiGe layer to form a source doping region and a drain doping region. Later, a source/drain annealing procedure is carried out to form a source and a drain in the substrate. At least one of the pre-amorphization implant procedure and the source/drain implanting procedure is carried out in a cryogenic procedure below −30° C.

    摘要翻译： 首先，在半导体工艺中设置具有凹部的基板。 第二，在衬底中形成嵌入的SiGe层。 嵌入的SiGe层包括填充凹槽的外延SiGe材料。 然后，在嵌入的SiGe层上进行预非晶化植入（PAI）工艺以形成非晶区域。 接下来，在嵌入的SiGe层上进行源极/漏极注入工艺以形成源极掺杂区域和漏极掺杂区域。 之后，进行源极/漏极退火处理以在衬底中形成源极和漏极。 前非晶化植入程序和源极/漏极注入程序中的至少一个在低于-30℃的低温过程中进行。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING STRESS MEMORIZATION TECHNIQUE
    3.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING STRESS MEMORIZATION TECHNIQUE 审中-公开
    使用应力记忆技术制造半导体器件的方法

    公开(公告)号：US20130023103A1

    公开(公告)日：2013-01-24

    申请号：US13185567

    申请日：2011-07-19

    申请人： Chan-Lon YANG ,  Ching-I LI ,  Ger-Pin LIN

    发明人： Chan-Lon YANG ,  Ching-I LI ,  Ger-Pin LIN

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7847 ,  H01L21/26593 ,  H01L29/7843

    摘要： A method for fabricating a semiconductor device is implemented by using a stress memorization technique. The method includes the following steps. Firstly, a substrate is provided, wherein a gate structure is formed over the substrate. Then, a pre-amorphization implantation process is performed to define an amorphized region at a preset area of the substrate with the gate structure serving as an implantation mask. During the pre-amorphization implantation process is performed, the substrate is controlled at a temperature lower than room temperature. Then, a stress layer is formed on the gate structure and a surface of the amorphized region. Then, a thermal treatment process is performed to re-crystallize the amorphized region of the substrate. Afterwards, the stress layer is removed.

    摘要翻译： 通过使用应力记忆技术来实现半导体器件的制造方法。 该方法包括以下步骤。 首先，提供衬底，其中在衬底上形成栅极结构。 然后，执行预非晶化注入工艺以在栅极结构用作注入掩模的衬底的预设区域处限定非晶化区域。 在非晶化期间，进行注入工艺，将衬底控制在低于室温的温度。 然后，在栅极结构和非晶化区域的表面上形成应力层。 然后，进行热处理工艺以重新结晶衬底的非晶化区域。 之后，去除应力层。

    SEMICONDUCTOR PROCESS
    4.
    发明申请
    SEMICONDUCTOR PROCESS 有权
    半导体工艺

    公开(公告)号：US20130137243A1

    公开(公告)日：2013-05-30

    申请号：US13308513

    申请日：2011-11-30

    申请人： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

    发明人： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

    IPC分类号： H01L21/20

    CPC分类号： H01L29/6656 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7847 ,  H01L29/7848

    摘要： First, a substrate with a recess is provided in a semiconductor process. Second, an embedded SiGe layer is formed in the substrate. The embedded SiGe layer includes an epitaxial SiGe material which fills up the recess. Then, a pre-amorphization implant (PAI) procedure is carried out on the embedded SiGe layer to form an amorphous region. Next, a source/drain implanting procedure is carried out on the embedded SiGe layer to form a source doping region and a drain doping region. Later, a source/drain annealing procedure is carried out to form a source and a drain in the substrate. At least one of the pre-amorphization implant procedure and the source/drain implanting procedure is carried out in a cryogenic procedure below −30° C.

    摘要翻译： 首先，在半导体工艺中设置具有凹部的基板。 第二，在衬底中形成嵌入的SiGe层。 嵌入的SiGe层包括填充凹槽的外延SiGe材料。 然后，在嵌入的SiGe层上进行预非晶化植入（PAI）工艺以形成非晶区域。 接下来，在嵌入的SiGe层上进行源极/漏极注入工艺以形成源极掺杂区域和漏极掺杂区域。 之后，进行源极/漏极退火处理以在衬底中形成源极和漏极。 前非晶化植入程序和源极/漏极注入程序中的至少一个在低于-30℃的低温过程中进行。

    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY
    7.
    发明申请
    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY 审中-公开
    不连续的非均匀磁共振记录膜

    公开(公告)号：US20110171494A1

    公开(公告)日：2011-07-14

    申请号：US12753904

    申请日：2010-04-05

    申请人： GER-PIN LIN ,  Po-Cheng Kuo ,  Sheng-Chi Chen ,  Chih-Lung Shen ,  Kai-Tze Huang ,  Ching-Ray Chang

    发明人： GER-PIN LIN ,  Po-Cheng Kuo ,  Sheng-Chi Chen ,  Chih-Lung Shen ,  Kai-Tze Huang ,  Ching-Ray Chang

    IPC分类号： G11B5/70 ,  G11B5/855 ,  G11B5/66 ,  G11B5/714 ,  G11B5/706

    CPC分类号： G11B5/64 ,  G11B5/653 ,  G11B5/84 ,  G11B5/851

    摘要： The present invention discloses a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. The discontinuous islanded ferromagnetic recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a high-temperature vacuum annealing process. After annealing, a surface energy difference existed between the ferromagnetic layer and the substrate turns the ferromagnetic layer into well-separated and discontinuous islanded ferromagnetic particles. Each islanded ferromagnetic particle is thought of a single magnetic domain, which is beneficial to achieve a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy.

    摘要翻译： 本发明公开了具有垂直磁各向异性的不连续岛状铁磁记录膜。 不连续的岛状铁磁记录膜包括基板和铁磁层。 铁基层形成在基板上，并通过高温真空退火工艺退火。 在退火之后，铁磁层之间存在表面能量差，并且基板将铁磁层转变为分离好的和不连续的岛状铁磁性颗粒。 每个岛状铁磁颗粒被认为是单个磁畴，这有利于实现具有垂直磁各向异性的不连续岛状铁磁记录膜。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20120315734A1

    公开(公告)日：2012-12-13

    申请号：US13156345

    申请日：2011-06-09

    申请人： Chan-Lon Yang ,  Ger-Pin Lin ,  Tsuo-Wen Lu

    发明人： Chan-Lon Yang ,  Ger-Pin Lin ,  Tsuo-Wen Lu

    IPC分类号： H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/823807 ,  H01L21/265 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834

    摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a gate structure thereon; forming an offset spacer on the sidewall of the gate structure; forming a cap layer to cover the substrate and the gate structure; performing an ion implantation process to implant carbon atoms into the cap layer; performing a first etching process to form a recess in the substrate adjacent to two sides of the gate structure; and forming an epitaxial layer in the recess.

    摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底，其中衬底包括其上的栅极结构; 在所述栅极结构的侧壁上形成偏移间隔物; 形成盖层以覆盖基板和栅极结构; 执行离子注入工艺以将碳原子注入到盖层中; 执行第一蚀刻工艺以在所述衬底中邻近所述栅极结构的两侧形成凹部; 以及在所述凹部中形成外延层。