公开(公告)号：US06913516B1

公开(公告)日：2005-07-05

申请号：US10710508

申请日：2004-07-16

Applicant: Ta-Jen Wang ,  Chi-Hao Chuang ,  Cheng-Hsiang Wu

Inventor： Ta-Jen Wang ,  Chi-Hao Chuang ,  Cheng-Hsiang Wu

IPC: B24B37/00 ,  B24B37/30 ,  B24B37/32 ,  B24B53/007 ,  B24B53/017 ,  B24B53/02 ,  H01L21/304 ,  B24B1/00

CPC classification number: B24B53/017 ,  B24B37/042

Abstract: A dummy process and a polishing-pad conditioning process suitable for a chemical mechanical polishing (CMP) is provided. The CMP apparatus includes a polishing head, a polishing table, and a polishing pad. The polishing head includes a protective hood, a base, a retaining ring and a wafer supporting assembly. The wafer is attached to an attaching surface in the wafer receiving recess. Next, the wafer supporting assembly is moved to make the bottom surface of the retaining ring more protrusive than the bottom surface of the wafer such that the wafer does not contact the surface of the polishing pad. Accordingly, the need for a large number of dummy wafers can be effectively avoided.

Abstract translation: 提供了适用于化学机械抛光（CMP）的虚拟工艺和抛光垫调节工艺。 CMP装置包括抛光头，抛光台和抛光垫。 抛光头包括保护罩，基座，保持环和晶片支撑组件。 晶片附接到晶片容纳凹部中的附接表面。 接下来，晶片支撑组件被移动以使保持环的底表面比晶片的底表面更突出，使得晶片不接触抛光垫的表面。 因此，可以有效地避免对大量虚拟晶片的需要。