公开(公告)号：US06670093B2

公开(公告)日：2003-12-30

申请号：US09858697

申请日：2001-05-16

Applicant: Tsing-Tang Song ,  Tsong-Shin Jean ,  Weir-Torn Jiaang ,  Chih-Shin Chuang ,  Han-Bin Cheng ,  Jui-Fa Chang ,  Tzu-Yu Lin

Inventor： Tsing-Tang Song ,  Tsong-Shin Jean ,  Weir-Torn Jiaang ,  Chih-Shin Chuang ,  Han-Bin Cheng ,  Jui-Fa Chang ,  Tzu-Yu Lin

IPC: G03F7004

CPC classification number: G03F7/0758 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/122

Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.

公开(公告)号：US07026091B2

公开(公告)日：2006-04-11

申请号：US10896536

申请日：2004-07-22

Applicant: Wei-Chan Tseng ,  Tsing-Tang Song ,  Chih-Shin Chuang ,  Kuen-Yuan Hwang ,  An-Pang Tu

Inventor： Wei-Chan Tseng ,  Tsing-Tang Song ,  Chih-Shin Chuang ,  Kuen-Yuan Hwang ,  An-Pang Tu

IPC: G03F7/023

CPC classification number: G03F7/168 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/111

Abstract: A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract translation: 在厚膜光刻工艺中使用具有均匀反应性的正性光致抗蚀剂包括在软烘烤期间的热固化和通过UV曝光的光解离。 正性光致抗蚀剂包括酚醛树脂，具有酸不稳定基团的树脂，光酸产生剂（PAG）和具有乙烯基醚或环氧基团的反应性单体。 首先，树脂与反应性单体反应，通过软烘烤进行热固化步骤以形成网状聚合物。 在UV光刻过程中，暴露的网络聚合物同时进行去保护和解聚，并且呈碱溶性。 由于良好的碱溶解对比度和均匀的反应性，得到的光致抗蚀剂图案具有高的纵横比和分辨率分布。

公开(公告)号：US07338747B2

公开(公告)日：2008-03-04

申请号：US10720966

申请日：2003-11-24

Applicant: Tsing-Tang Song ,  Chih-Shin Chuang ,  Wei-Chan Tseng ,  Kuen-Yuan Hwang ,  Tsung-Yu Chen

Inventor： Tsing-Tang Song ,  Chih-Shin Chuang ,  Wei-Chan Tseng ,  Kuen-Yuan Hwang ,  Tsung-Yu Chen

IPC: G03F7/029 ,  G03F7/031 ,  G03F7/032 ,  G03F7/033

CPC classification number: G03F7/038 ,  G03F7/027

Abstract: This invention relates to a negative photoresist composition with multi-reaction models. When the photoresist composition according to the present invention is used in photolithography processes employing UV light to produce cross-link reactions and multi-reactions including radical polymerization and cationic polymerization also occur. The photoresist composition can be used to control light reaction efficiency and increase reaction thoroughness, thus obtaining a high resolution pattern.

Abstract translation: 本发明涉及具有多反应模型的负性光致抗蚀剂组合物。 当根据本发明的光致抗蚀剂组合物用于使用UV光产生交联反应的光刻方法中时，也发生包括自由基聚合和阳离子聚合的多重反应。 光致抗蚀剂组合物可用于控制光反应效率并提高反应的彻底性，从而获得高分辨率图案。

公开(公告)号：US20050019691A1

公开(公告)日：2005-01-27

申请号：US10896536

申请日：2004-07-22

Applicant: Wei-Chan Tseng ,  Tsing-Tang Song ,  Chih-Shin Chuang ,  Kuen-Yuan Hwang ,  An-Pang Tu

Inventor： Wei-Chan Tseng ,  Tsing-Tang Song ,  Chih-Shin Chuang ,  Kuen-Yuan Hwang ,  An-Pang Tu

IPC: G03F7/039 ,  G03F7/16 ,  G03C1/76

CPC classification number: G03F7/168 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/111

Abstract: A positive photoresist WITHuniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract translation: 在厚膜光刻工艺中使用的具有不均匀反应性的正性光致抗蚀剂包括在软烘烤期间的热固化和通过UV曝光的光解离。 正性光致抗蚀剂包括酚醛树脂，具有酸不稳定基团的树脂，光酸产生剂（PAG）和具有乙烯基醚或环氧基团的反应性单体。 首先，树脂与反应性单体反应，通过软烘烤进行热固化步骤以形成网状聚合物。 在UV光刻过程中，暴露的网络聚合物同时进行去保护和解聚，并且呈碱溶性。 由于良好的碱溶解对比度和均匀的反应性，得到的光致抗蚀剂图案具有高的纵横比和分辨率分布。