公开(公告)号：US5494861A

公开(公告)日：1996-02-27

申请号：US328691

申请日：1994-10-25

申请人： Shigeki Yamaga ,  Chikao Kimura

发明人： Shigeki Yamaga ,  Chikao Kimura

IPC分类号： C04B35/581 ,  C30B33/00 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/683

CPC分类号： C30B33/00 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/3245 ,  Y10S148/113

摘要： A method for heat-treating a compound semiconductor comprising a step of heat-treating a susceptor in a manner as to be disposed on a surface of the compound semiconductor with oposing each other, the susceptor comprising a compound of nitrogen and a group III element such as aluminum nitride.

摘要翻译： 一种对化合物半导体进行热处理的方法，其特征在于，包括以下步骤：以相对于所述化合物半导体的表面配置的方式对所述基座进行热处理的步骤，所述基座包含氮化合物和III族元素， 作为氮化铝。

公开(公告)号：US06686647B2

公开(公告)日：2004-02-03

申请号：US09878387

申请日：2001-06-12

申请人： Chikao Kimura ,  Atsushi Nakagawa

发明人： Chikao Kimura ,  Atsushi Nakagawa

IPC分类号： H01L31107

CPC分类号： H01L47/026

摘要： Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interposing an active layer. An anode electrode and a cathode electrode are formed on the uppermost contact layer. A high resistance region around the cathode electrode is formed at least in an uppermost contact layer by ion implantation using the cathode and anode electrode as a mask. A region under the cathode electrode functions as a Gunn diode and a region under the anode electrode function as a conductive path from the anode electrode to the active layer. These two regions are defined by the high resistance region.

摘要翻译： 提供了实现热特性改善，良好产品屈服系数和容易组装到平面电路的铟荧光体（InP）耿氏二极管。在本发明的耿氏二极管中，接触层插入有源层。 阳极电极和阴极电极形成在最上层的接触层上。 通过使用阴极和阳极作为掩模，通过离子注入，至少在最上层的接触层中形成阴极周围的高电阻区域。阴极电极下方的区域用作耿氏二极管，阳极电极下面的区域作为 从阳极电极到有源层的导电路径。 这两个区域由高电阻区域限定。

公开(公告)号：US5614447A

公开(公告)日：1997-03-25

申请号：US559091

申请日：1995-11-16

申请人： Shigeki Yamaga ,  Chikao Kimura

发明人： Shigeki Yamaga ,  Chikao Kimura

IPC分类号： H01L21/26 ,  C04B35/581 ,  C30B33/00 ,  H01L21/265 ,  H01L21/324 ,  H01L21/683

CPC分类号： C30B29/06 ,  C30B29/42 ,  C30B33/00 ,  H01L21/324 ,  Y10S148/113

摘要： A method for heat-treating a semiconductor body comprising steps of: (a) disposing a susceptor on one surface of the semiconductor body, and disposing a protection plate in such a manner that the other surface of the semiconductor faces to a surface the protection plate, (b) heat-treating the semiconductor body, wherein the susceptor and the protection plate comprises at least one member selected from the group consisting of gallium nitride, aluminum nitride and boron nitride, and at least one of the susceptor and the protection plate has an absorber of infrared ray.

摘要翻译： 一种半导体器件的热处理方法，包括以下步骤：（a）将基座设置在半导体本体的一个表面上，并且以使得半导体的另一个表面面向保护板的方式设置保护板 （b）对半导体本体进行热处理，其中所述基座和所述保护板包括选自由氮化镓，氮化铝和氮化硼组成的组中的至少一个，并且所述基座和所述保护板中的至少一个具有 红外线吸收体。

公开(公告)号：US06559582B2

公开(公告)日：2003-05-06

申请号：US09971226

申请日：2001-10-03

申请人： Hiroyuki Miyamoto ,  Misao Iseki ,  Manabu Arai ,  Hideaki Tamai ,  Chikao Kimura

发明人： Hiroyuki Miyamoto ,  Misao Iseki ,  Manabu Arai ,  Hideaki Tamai ,  Chikao Kimura

IPC分类号： H01J114

CPC分类号： H01J1/144

摘要： There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.