公开(公告)号：US07172948B2

公开(公告)日：2007-02-06

申请号：US10761657

申请日：2004-01-20

Applicant: Chin-Kun Fang ,  Kun-Pi Cheng ,  Wei-Jen Wu ,  Ching-Jiunn Huang ,  Chung-Jen Chen

Inventor： Chin-Kun Fang ,  Kun-Pi Cheng ,  Wei-Jen Wu ,  Ching-Jiunn Huang ,  Chung-Jen Chen

IPC: H01L21/76

CPC classification number: H01L21/76229 ,  H01L23/544 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A semiconductor process wafer having substantially co-planar active areas and a laser marked area in an adjacent inactive area and method for forming the same to eliminate a step height and improve a subsequent patterning process over the active areas wherein an inactive area trench is formed overlying the laser marked area in parallel with formation of STI trenches in the active area whereby the active areas and the inactive area are formed substantially co-planar without a step height.

Abstract translation: 具有相邻非活性区域中基本上共平面的有源区和激光标记区的半导体工艺晶片及其形成方法以消除台阶高度并改善在有源区上的后续图案化工艺，其中形成无效区沟槽 激光标记区域与有源区域中的STI沟槽的形成平行，由此有源区域和非活性区域形成为基本上没有台阶高度共面。

公开(公告)号：US06811955B2

公开(公告)日：2004-11-02

申请号：US10235185

申请日：2002-09-04

Applicant: Wei-Jen Wu ,  Sung-Cheng Chiu ,  Ching-Jiunn Huang ,  Cheng-Ming Wu

Inventor： Wei-Jen Wu ,  Sung-Cheng Chiu ,  Ching-Jiunn Huang ,  Cheng-Ming Wu

IPC: G03F726

CPC classification number: G03F7/3021

Abstract: A method for developing a photo-exposed photoresist layer to improve a critical dimension uniformity (CDU) for a semiconductor device manufacturing process including providing a semiconductor process wafer having a process surface comprising a photoresist layer photo-exposed according to an exposure pattern; dispensing a predetermined amount of developer solution over a stationary semiconductor process wafer to form a film of developer solution covering the process surface; partially developing the exposed portions of the photoresist layer comprising maintaining the semiconductor process wafer in a stationary position for a predetermined time period; rotating the semiconductor process wafer for a predetermined period of time to remove a portion of the developer solution; and, repeating the steps of dispensing, partially developing, and rotating, for a predetermined number of repetition cycles to complete a photoresist development process.

公开(公告)号：US20050158966A1

公开(公告)日：2005-07-21

申请号：US10761657

申请日：2004-01-20

Applicant: Chin-Kun Fang ,  Kun-Pi Cheng ,  Wei-Jen Wu ,  Ching-Jiunn Huang ,  Chung-Jen Chen

Inventor： Chin-Kun Fang ,  Kun-Pi Cheng ,  Wei-Jen Wu ,  Ching-Jiunn Huang ,  Chung-Jen Chen

IPC: H01L21/76 ,  H01L21/762 ,  H01L23/544

CPC classification number: H01L21/76229 ,  H01L23/544 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A semiconductor process wafer having substantially co-planar active areas and a laser marked area in an adjacent inactive area and method for forming the same to eliminate a step height and improve a subsequent patterning process over the active areas wherein an inactive area trench is formed overlying the laser marked area in parallel with formation of STI trenches in the active area whereby the active areas and the inactive area are formed substantially co-planar without a step height.

Abstract translation: 具有相邻非活性区域中基本上共平面的有源区和激光标记区的半导体工艺晶片及其形成方法以消除台阶高度并改善在有源区上的后续图案化工艺，其中形成无效区沟槽 激光标记区域与有源区域中的STI沟槽的形成平行，由此有源区域和非活性区域形成为基本上没有台阶高度共面。