Method and apparatus for thermally treating substrates
    1.
    发明授权
    Method and apparatus for thermally treating substrates 有权
    用于热处理基板的方法和装置

    公开(公告)号:US07316969B2

    公开(公告)日:2008-01-08

    申请号:US11446675

    申请日:2006-06-05

    IPC分类号: H01L21/20

    摘要: The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents an apparatus and method for thermally treating substrates, wherein the substrate is exposed to at least a first and at least a second radiation; the predetermined wavelengths of the first radiation are absorbed between the first radiation source and the substrate; a radiation from the substrate is measured in the predetermined wavelength using a radiation detector arranged on the same side as a second radiation source; the second radiation from the second radiation source is modulated and determined.

    摘要翻译: 本公开的目的是以简单和经济的方式使用高温计测量温度,使得即使对于低温也能进行精确的温度测量。 本公开提供了一种用于热处理基底的装置和方法,其中所述基底暴露于至少第一和至少第二辐射; 第一辐射的预定波长在第一辐射源和衬底之间被吸收; 使用布置在与第二辐射源相同侧的辐射检测器以预定波长测量来自衬底的辐射; 调制并确定来自第二辐射源的第二辐射。

    Method and device for thermal treatment of substrates
    2.
    发明授权
    Method and device for thermal treatment of substrates 有权
    用于基材热处理的方法和装置

    公开(公告)号:US07056389B2

    公开(公告)日:2006-06-06

    申请号:US10478754

    申请日:2002-05-23

    IPC分类号: C23C16/00 G01J1/00

    摘要: The object of the invention is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The invention presents a device and method for thermally treating substrates, wherein the substrate is exposed to at least a first and at least a second radiation; the predetermined wavelengths of the first radiation are absorbed between the first radiation source and the substrate; a radiation from the substrate is measured in the predetermined wavelength using a radiation detector arranged on the same side as a second radiation source; the second radiation from the second radiation source is modulated and determined.

    摘要翻译: 本发明的目的是以简单和经济的方式测量使用高温计的温度,即使对于低温也能进行精确的温度测量。 本发明提出了一种用于热处理衬底的装置和方法,其中衬底暴露于至少第一和至少第二辐射; 第一辐射的预定波长在第一辐射源和衬底之间被吸收; 使用布置在与第二辐射源相同侧的辐射检测器以预定波长测量来自衬底的辐射; 调制并确定来自第二辐射源的第二辐射。

    Process for determining the temperature of a semiconductor wafer in a rapid heating unit
    3.
    发明申请
    Process for determining the temperature of a semiconductor wafer in a rapid heating unit 有权
    用于确定快速加热单元中的半导体晶片的温度的方法

    公开(公告)号:US20060100735A1

    公开(公告)日:2006-05-11

    申请号:US10540613

    申请日:2003-11-28

    IPC分类号: G06F19/00 H01L21/00 H01L21/66

    摘要: The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value adjusted by the changeable portion and the adjusted forecast value, state correction of a state of the model system by recirculation of the second difference in the model, with the aim of bringing the state of the model system into correspondence with that of the real system, and measurement of the at least one state variable on the model.

    摘要翻译: 本发明涉及一种用于通过在RTP系统上测量的至少一个测量信号从RTP系统的模型确定至少一个状态变量的过程 - 测量值,其与待确定的状态变量有关, 以及通过模型 - 预测值预测的测量值,由此测量值和预测值分别包括常数和可变部分的分量,并且由此分别至少建立可变部分,由滤波器分隔开 ,以便在模型的可变部分和通过模型预测的测量值的可变部分之间形成第一差异,通过再循环模型中的第一差异来至少一个模型参数的参数自适应,目的是 将模型行为适应于可变系统参数,与测量值和预测值形成第二个差异 通过可变部分调整的测量值和经调整的预测值,通过模型中的第二差异的再循环对模型系统的状态进行状态校正,目的是使模型系统的状态与 实际系统和模型上至少一个状态变量的测量。

    Process for determining the temperature of a semiconductor wafer in a rapid heating unit
    4.
    发明授权
    Process for determining the temperature of a semiconductor wafer in a rapid heating unit 有权
    用于确定快速加热单元中的半导体晶片的温度的方法

    公开(公告)号:US07412299B2

    公开(公告)日:2008-08-12

    申请号:US10540613

    申请日:2003-11-28

    IPC分类号: G06F19/00 G05B13/02

    摘要: The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value adjusted by the changeable portion and the adjusted forecast value, state correction of a state of the model system by recirculation of the second difference in the model, with the aim of bringing the state of the model system into correspondence with that of the real system, and measurement of the at least one state variable on the model.

    摘要翻译: 本发明涉及一种用于通过在RTP系统上测量的至少一个测量信号从RTP系统的模型确定至少一个状态变量的过程 - 测量值,其与待确定的状态变量有关, 以及通过模型 - 预测值预测的测量值,由此测量值和预测值分别包括常数和可变部分的分量,并且由此分别至少建立可变部分,由滤波器分隔开 ,以便在模型的可变部分和通过模型预测的测量值的可变部分之间形成第一差异,通过再循环模型中的第一差异来至少一个模型参数的参数自适应,目的是 将模型行为适应于可变系统参数,与测量值和预测值形成第二个差异 通过可变部分调整的测量值和经调整的预测值,通过模型中的第二差异的再循环对模型系统的状态进行状态校正,目的是使模型系统的状态与 实际系统和模型上至少一个状态变量的测量。

    Method and apparatus for thermally treating substrates
    5.
    发明申请
    Method and apparatus for thermally treating substrates 有权
    用于热处理基板的方法和装置

    公开(公告)号:US20060291834A1

    公开(公告)日:2006-12-28

    申请号:US11446675

    申请日:2006-06-05

    IPC分类号: F26B19/00

    摘要: The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents an apparatus and method for thermally treating substrates, wherein the substrate is exposed to at least a first and at least a second radiation; the predetermined wavelengths of the first radiation are absorbed between the first radiation source and the substrate; a radiation from the substrate is measured in the predetermined wavelength using a radiation detector arranged on the same side as a second radiation source; the second radiation from the second radiation source is modulated and determined.

    摘要翻译: 本公开的目的是以简单和经济的方式使用高温计测量温度,使得即使对于低温也能进行精确的温度测量。 本公开提供了一种用于热处理基底的装置和方法,其中所述基底暴露于至少第一和至少第二辐射; 第一辐射的预定波长在第一辐射源和衬底之间被吸收; 使用布置在与第二辐射源相同侧的辐射检测器以预定波长测量来自衬底的辐射; 调制并确定来自第二辐射源的第二辐射。