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公开(公告)号：US08927330B2
公开(公告)日：2015-01-06
申请号：US13572710
申请日：2012-08-13
IPC分类号： H01L21/363 , H01L29/786
CPC分类号： H01L29/7869
摘要： Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.
摘要翻译： 本文公开了一种制造金属氧化物薄膜晶体管的方法。 该方法包括以下步骤：（a1）在基板上形成栅电极; （a2）在所述栅电极上形成栅极绝缘层; （a3）在栅极绝缘层上形成具有沟道区的金属氧化物半导体层; （a4）在所述金属氧化物半导体层上形成源电极和漏电极，其中所述源电极通过所述沟道区域露出的间隙与所述漏电极间隔开; （a5）在沟道区上形成迁移率增强层，其中迁移率增强层不与源电极和漏电极接触; 和（a6）在约200℃至350℃的温度的环境中退火金属氧化物半导体层和迁移率增强层。
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公开(公告)号：US09647138B2
公开(公告)日：2017-05-09
申请号：US13480742
申请日：2012-05-25
IPC分类号： H01L29/22 , H01L51/30 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
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公开(公告)号：US20120313084A1
公开(公告)日：2012-12-13
申请号：US13480742
申请日：2012-05-25
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
摘要翻译： 金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。 金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。 栅极绝缘层设置在栅极和金属氧化物有源层之间。 源极和漏极分别连接到金属氧化物活性层。 第二表面限定了源极和漏极之间的迁移率增强区域。 迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。 金属氧化物半导体晶体管具有高载流子迁移率。
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4.发明申请公开(公告)号：US20120018718A1
公开(公告)日：2012-01-26
申请号：US12927835
申请日：2010-11-26
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/66969
摘要： A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device.
摘要翻译： 一种自对准顶栅薄膜晶体管及其制造方法。 该方法包括制备其上依次形成有氧化物半导体层，电介质层和金属层的衬底，其中氧化物半导体层包括分别不被电介质层和金属层覆盖的第一和第二连接区域， 所述第一和第二连接区域在进行加热处理或紫外线照射之后具有导体的性质; 以及源极电极和漏电极，分别形成在所述基板上并连接到所述第一和第二连接区域。 因此，不需要现有技术所要求的离子掺杂剂的处理，可以减少第一和第二连接区域的接触电阻，从而简化了制造工艺。 此外，源电极和漏电极可以精确地定位并进一步提高器件的性能。
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公开(公告)号：US20120188627A1
公开(公告)日：2012-07-26
申请号：US13104100
申请日：2011-05-10
申请人： YING-PING CHEN , Hsiao-Wen Zan , Chuang-Chuang Tsai , Yung-Sheng Chang , Chia-Chun Yeh , Ted-Hong Shinn
发明人： YING-PING CHEN , Hsiao-Wen Zan , Chuang-Chuang Tsai , Yung-Sheng Chang , Chia-Chun Yeh , Ted-Hong Shinn
CPC分类号： H04Q9/00 , H04Q2209/10 , H04Q2209/40
摘要： A smart window includes a windowpane, at least one sensor and a wireless signal transceiver. The sensor is disposed on the windowpane and configured for detecting an environmental factor and accordingly outputting a sensing signal. The wireless signal transceiver is disposed on the windowpane and electrically connected to the sensor. The wireless signal transceiver is configured for further transmitting the sensing signal from the sensor. A smart window system includes the aforementioned smart window. The smart window and the smart window system adopt wireless communication manner to transmit the sensing signals, and thereby the smart window system has an overall modulation to an environmental factor.
摘要翻译： 智能窗口包括窗玻璃，至少一个传感器和无线信号收发器。 传感器设置在窗玻璃上，并且被配置为检测环境因素并相应地输出感测信号。 无线信号收发器设置在窗玻璃上并电连接到传感器。 无线信号收发器被配置为进一步发送来自传感器的感测信号。 智能窗系统包括上述智能窗。 智能窗口和智能窗口系统采用无线通信方式传输感测信号，从而使智能窗口系统具有对环境因素的整体调制。
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公开(公告)号：US20120235120A1
公开(公告)日：2012-09-20
申请号：US13111205
申请日：2011-05-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
CPC分类号： H01L51/442 , H01L51/057 , H01L51/4253 , H01L51/5215 , H01L51/5234 , H01L51/5296 , Y02E10/549
摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
摘要翻译： 提供了一种垂直电光部件及其形成方法。 垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层， 以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。 因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。
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公开(公告)号：US20110159171A1
公开(公告)日：2011-06-30
申请号：US12803329
申请日：2010-06-23
申请人： Chain-Shu Hsu , Hsin-Fei Meng , Sheng-Fu Horng , Hsiao-Wen Zan , Hsin-Rong Tseng , Chung-Ling Yeh , Hung-Wei Hsu , Chang-Yao Liu , Hsiu-Yuan Yang
发明人： Chain-Shu Hsu , Hsin-Fei Meng , Sheng-Fu Horng , Hsiao-Wen Zan , Hsin-Rong Tseng , Chung-Ling Yeh , Hung-Wei Hsu , Chang-Yao Liu , Hsiu-Yuan Yang
CPC分类号： H01L51/0003 , H01L27/3239 , H01L51/56
摘要： A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components.
摘要翻译： 提供一种制造有机发光二极管的方法及其装置。 该方法包括：提供衬底; 将第二有机分子溶解在溶剂中得到的第二有机分子溶液; 将所述第二有机分子溶液施加到所述基板的表面以形成湿膜层; 并通过加热单元加热湿膜层以从其中除去溶剂，从而形成第二有机分子膜。 该方法在制造用于制造大面积光电部件的均匀多层结构中是有效的。
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公开(公告)号：US20220384737A1
公开(公告)日：2022-12-01
申请号：US17873240
申请日：2022-07-26
IPC分类号： H01L51/00
摘要： Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.
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公开(公告)号：US08723165B2
公开(公告)日：2014-05-13
申请号：US13111205
申请日：2011-05-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
CPC分类号： H01L51/442 , H01L51/057 , H01L51/4253 , H01L51/5215 , H01L51/5234 , H01L51/5296 , Y02E10/549
摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
摘要翻译： 提供了一种垂直电光部件及其形成方法。 垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层， 以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。 因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。
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10.发明授权公开(公告)号：US08722454B2
公开(公告)日：2014-05-13
申请号：US13668451
申请日：2012-11-05
申请人： Hsin-Fei Meng , Hao-Wu Lin , Sheng-Fu Horng , Hsiao-Wen Zan , Hao-Wen Chang , Yu-Fan Chang , Yu-Chian Chiu
发明人： Hsin-Fei Meng , Hao-Wu Lin , Sheng-Fu Horng , Hsiao-Wen Zan , Hao-Wen Chang , Yu-Fan Chang , Yu-Chian Chiu
IPC分类号： H01L51/40
CPC分类号： H01L51/508 , H01L51/0003 , H01L51/0072 , H01L51/506 , H01L51/5076 , H01L51/56
摘要： A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.
摘要翻译： 提供一种制造有机电子部件的方法。 该方法包括提供基底和有机材料的步骤; 将有机材料涂覆到基材上; 加热衬底以形成第一载流子传输层; 将具有金属离子的材料掺杂到有机溶剂中以形成有机溶液; 以及将所述有机溶液施加到所述第一载流子传输层上以形成第二载流子传输层。
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