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    BIOCHEMICAL SENSOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    BIOCHEMICAL SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    生物化学传感器及其制造方法

    公开(公告)号：US20120223370A1

    公开(公告)日：2012-09-06

    申请号：US13114728

    申请日：2011-05-24

    申请人： Hsiao-Wen ZAN ,  Chuang-Chuang Tsai ,  Hsin-Fei Meng ,  Chun-Cheng Yeh ,  Ming-Zhi Dai ,  Chang-Hung Li

    发明人： Hsiao-Wen ZAN ,  Chuang-Chuang Tsai ,  Hsin-Fei Meng ,  Chun-Cheng Yeh ,  Ming-Zhi Dai ,  Chang-Hung Li

    IPC分类号： H01L29/66 ,  H01L21/02

    CPC分类号： G01N27/4145 ,  B82Y15/00

    摘要： A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain.

    摘要翻译： 公开了一种生物化学传感器及其制造方法。 所述生物化学传感器包括基板，布置在所述基板的一侧上的栅极，布置在所述栅极的与所述基板相对的一侧上的栅极绝缘层，布置在所述栅极绝缘层的与所述栅极相对的一侧上的有源层， 布置在与栅极绝缘层相对的有源层的一侧上的源极和漏极，以及布置在与栅极绝缘层相对的源极和漏极之间的有源层的一侧上的生物化学感测层。

    Metal oxide semiconductor transistor
    2.
    发明授权
    Metal oxide semiconductor transistor 有权

    公开(公告)号：US09647138B2

    公开(公告)日：2017-05-09

    申请号：US13480742

    申请日：2012-05-25

    申请人： Chuang-Chuang Tsai ,  Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chun-Cheng Yeh

    发明人： Chuang-Chuang Tsai ,  Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chun-Cheng Yeh

    IPC分类号： H01L29/22 ,  H01L51/30 ,  H01L29/786

    CPC分类号： H01L29/78696 ,  H01L29/78606 ,  H01L29/78693

    摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.

    METAL OXIDE SEMICONDUCTOR TRANSISTOR
    3.
    发明申请
    METAL OXIDE SEMICONDUCTOR TRANSISTOR 有权
    金属氧化物半导体晶体管

    公开(公告)号：US20120313084A1

    公开(公告)日：2012-12-13

    申请号：US13480742

    申请日：2012-05-25

    申请人： CHUANG-CHUANG TSAI ,  Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chun-Cheng Yeh

    发明人： CHUANG-CHUANG TSAI ,  Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chun-Cheng Yeh

    IPC分类号： H01L29/22 ,  H01L51/30

    CPC分类号： H01L29/78696 ,  H01L29/78606 ,  H01L29/78693

    摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.

    摘要翻译： 金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。 金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。 栅极绝缘层设置在栅极和金属氧化物有源层之间。 源极和漏极分别连接到金属氧化物活性层。 第二表面限定了源极和漏极之间的迁移率增强区域。 迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。 金属氧化物半导体晶体管具有高载流子迁移率。

    VERTICAL TYPE SENSOR
    4.
    发明申请
    VERTICAL TYPE SENSOR 有权
    垂直式传感器

    公开(公告)号：US20120086431A1

    公开(公告)日：2012-04-12

    申请号：US13009440

    申请日：2011-01-19

    申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

    发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

    IPC分类号： G01R19/00 ,  H01L21/02 ,  H01L29/66

    CPC分类号： G01N27/3278 ,  G01N27/414 ,  G01N33/54373 ,  G01N33/5438 ,  H01L51/057 ,  H01L51/5203

    摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.

    摘要翻译： 本发明提供了一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。 本发明的垂直型传感器提供即时，灵敏和快速的检测。

    Vertical type sensor
    5.
    发明授权
    Vertical type sensor 有权
    立式传感器

    公开(公告)号：US08723503B2

    公开(公告)日：2014-05-13

    申请号：US13009440

    申请日：2011-01-19

    申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

    发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

    IPC分类号： H01L29/08 ,  H01L21/00 ,  G01N33/543 ,  H01L51/52 ,  H01L51/05 ,  G01N27/414

    CPC分类号： G01N27/3278 ,  G01N27/414 ,  G01N33/54373 ,  G01N33/5438 ,  H01L51/057 ,  H01L51/5203

    摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.

    摘要翻译： 本发明提供一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。 本发明的垂直型传感器提供即时，灵敏和快速的检测。

    VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME 有权
    垂直电光元件及其制造方法

    公开(公告)号：US20120235120A1

    公开(公告)日：2012-09-20

    申请号：US13111205

    申请日：2011-05-19

    申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

    发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

    IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L51/48 ,  H01L51/44

    CPC分类号： H01L51/442 ,  H01L51/057 ,  H01L51/4253 ,  H01L51/5215 ,  H01L51/5234 ,  H01L51/5296 ,  Y02E10/549

    摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

    摘要翻译： 提供了一种垂直电光部件及其形成方法。 垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层， 以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。 因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。

    Vertical electro-optical component and method of fabricating the same
    9.
    发明授权
    Vertical electro-optical component and method of fabricating the same 有权
    垂直电光元件及其制造方法

    公开(公告)号：US08723165B2

    公开(公告)日：2014-05-13

    申请号：US13111205

    申请日：2011-05-19

    申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

    发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

    IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L51/44

    CPC分类号： H01L51/442 ,  H01L51/057 ,  H01L51/4253 ,  H01L51/5215 ,  H01L51/5234 ,  H01L51/5296 ,  Y02E10/549

    摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

    摘要翻译： 提供了一种垂直电光部件及其形成方法。 垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层， 以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。 因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。