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    Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip
    2.
    发明授权
    Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip 有权
    自锁式自旋阀传感器，具有应力改性层，用于降低幅度翻转的可能性

    公开(公告)号：US07196878B2

    公开(公告)日：2007-03-27

    申请号：US10788727

    申请日：2004-02-27

    申请人： Ciaran Avram Fox ,  Hardayal Singh Gill ,  Prakash Kasiraj ,  Wen-Yaung Lee ,  Mustafa Michael Pinarbasi

    发明人： Ciaran Avram Fox ,  Hardayal Singh Gill ,  Prakash Kasiraj ,  Wen-Yaung Lee ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： G11B5/33 ,  G11B5/1272

    摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.

    摘要翻译： 自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。 自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。 在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。 优选地，压应力改性层由钌（Ru）或其它合适的材料制成。

    Method of protecting read sensors from electrostatic discharge damage during the manufacture of magnetic heads
    3.
    发明授权
    Method of protecting read sensors from electrostatic discharge damage during the manufacture of magnetic heads 有权
    在磁头制造期间保护读取传感器免受静电放电损坏的方法

    公开(公告)号：US06795278B2

    公开(公告)日：2004-09-21

    申请号：US10109511

    申请日：2002-03-28

    申请人： James Devereaux Jarrett ,  Richard Hsiao ,  Ciaran Avram Fox ,  Edward Hin Pong Lee ,  Thomas Robert Albrecht

    发明人： James Devereaux Jarrett ,  Richard Hsiao ,  Ciaran Avram Fox ,  Edward Hin Pong Lee ,  Thomas Robert Albrecht

    IPC分类号： G11B5127

    CPC分类号： G11B5/3903 ,  G11B5/11 ,  G11B5/3163 ,  G11B5/3173 ,  G11B5/40

    摘要： Methods and apparatus for protecting read sensors from damage caused by electrostatic discharge (ESD) during manufacturing are described. Two electrical connections are formed and utilized for ESD protection: one primarily for early protection of the sensors (i.e. prior to cutting and lapping the wafer to form the ABS) and the other primarily for later protection of the sensors (i.e. after cutting and lapping the wafer to form the ABS). The first electrical connection is created between the read sensor and the first and second shields, and is severed when the wafer is cut and lapped along the ABS. The second electrical connection is formed between the sensor leads and the first and second shields, and is exposed on an outside surface of the magnetic head. The second electrical connection is severed late in the manufacturing process, preferably by laser-deletion.

    摘要翻译： 描述了用于保护读取传感器免于在制造期间由静电放电（ESD）引起的损害的方法和装置。 形成两个电气连接并用于ESD保护：一个主要用于传感器的早期保护（即在切割和研磨晶片以形成ABS之前），另一个主要用于以后保护传感器（即在切割和研磨之后） 晶片形成ABS）。 在读取传感器和第一和第二屏蔽之间产生第一电连接，并且当沿着ABS切割晶片时被切断。 第二电连接形成在传感器引线与第一和第二屏蔽之间，并且暴露在磁头的外表面上。 第二电连接在制造过程的后期被切断，优选地通过激光删除。