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1.发明授权Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip 有权自锁式自旋阀传感器，具有应力改性层，用于降低幅度翻转的可能性公开(公告)号：US07196878B2
公开(公告)日：2007-03-27
申请号：US10788727
申请日：2004-02-27
申请人： Ciaran Avram Fox , Hardayal Singh Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Michael Pinarbasi
发明人： Ciaran Avram Fox , Hardayal Singh Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Michael Pinarbasi
IPC分类号： G11B5/39
CPC分类号： G11B5/33 , G11B5/1272
摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
摘要翻译： 自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。 自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。 在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。 优选地，压应力改性层由钌（Ru）或其它合适的材料制成。
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2.发明申请CURRENT PERPENDICULAR TO PLANE GMR AND TMR SENSORS WITH IMPROVED MAGNETIC PROPERTIES USING Ru/Si SEED LAYERS 有权目前使用Ru / Si SEED层的具有改进磁性的GMR和TMR传感器的平面布置公开(公告)号：US20090080122A1
公开(公告)日：2009-03-26
申请号：US11862119
申请日：2007-09-26
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.
摘要翻译： 具有薄种子层的磁感应传感器，其在传感器堆叠的层之间提供非常平滑的界面。 由种子层提供的非常平滑的界面减少层间交换耦合，使得非磁性间隔层（或阻挡层）非常薄。 种子层包括Ru的薄层和Si的薄层，其混合以形成Ru-硅化物的均匀的非晶态薄晶种层。
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3.发明授权Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers 有权电流垂直于平面GMR和TMR传感器具有改进的磁性能使用Ru / Si种子层公开(公告)号：US08068315B2
公开(公告)日：2011-11-29
申请号：US11862119
申请日：2007-09-26
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.
摘要翻译： 具有薄种子层的磁感应传感器，其在传感器堆叠的层之间提供非常平滑的界面。 由种子层提供的非常平滑的界面减少层间交换耦合，使得非磁性间隔层（或阻挡层）非常薄。 种子层包括Ru的薄层和Si的薄层，其混合以形成Ru-硅化物的均匀的非晶态薄晶种层。
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4.发明授权Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性公开(公告)号：US07466524B2
公开(公告)日：2008-12-16
申请号：US11301877
申请日：2005-12-13
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。
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5.发明授权Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性公开(公告)号：US07019949B2
公开(公告)日：2006-03-28
申请号：US10732200
申请日：2003-12-10
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。
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6.发明授权Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance 有权电流垂直于采用半金属合金的平面磁阻传感器，以提高传感器性能公开(公告)号：US08810973B2
公开(公告)日：2014-08-19
申请号：US12119961
申请日：2008-05-13
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/39
CPC分类号： G11B5/313 , B82Y10/00 , B82Y25/00 , G01R33/091 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3272 , H01F10/3286 , H01F10/3295 , Y10T428/1121
摘要： A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.
摘要翻译： 一种磁阻传感器，其使用含Mn的Huesler合金，在使腐蚀和Mn迁移最小化的结构中提高磁阻性能。 该传感器可以被构造成具有包层层结构，其包括Co2MnX和CoFe层的叠层，其中X是Al，Ge或Si。 Co2MnX可以夹在CoFe层之间以防止Mn迁移到间隔物/阻挡层中。 自由层也可以被构造为Co2MnX和CoFe层的叠层，也可以被构造成使Co 2 Mn x层夹在CoFe层之间以防止Mn迁移。
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公开(公告)号：US08018691B2
公开(公告)日：2011-09-13
申请号：US12254662
申请日：2008-10-20
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B2005/3996
摘要： A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer.
摘要翻译： 具有无剪切层设计且无固定层的磁阻传感器。 该传感器包括第一自由层和第二自由层，其具有以彼此成90度的方向定向的磁化，并且具有与第一自由层反平行耦合的磁化的第三磁性层。 第三磁性层与自由层之一的反平行耦合允许传感器以隧道阀设计使用，在自由层之间具有电绝缘阻挡层。 隧道阀设计减少了传感器中的自旋扭矩噪声，并且第三磁性层的存在允许自由层保持彼此90度的偏压，尽管通过非常薄的阻挡层进行界面耦合。
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公开(公告)号：US20110026169A1
公开(公告)日：2011-02-03
申请号：US12510560
申请日：2009-07-28
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A dual current-perpendicular-to-plane scissor sensor according to one embodiment includes a middle free layer; two outer free layers positioned on opposite sides of the middle free layer; spacer layers between the middle free layer and each of the outer free layers; and a hard bias layer positioned behind the free layers relative to a media-facing surface of the sensor, wherein the free layers are about magnetostatically balanced.
摘要翻译： 根据一个实施例的双电流垂直平面剪式传感器包括中间自由层; 位于中间自由层的相对侧上的两个外部自由层; 中间自由层和每个外部自由层之间的间隔层; 以及相对于所述传感器的面向媒体的表面定位在所述自由层后面的硬偏置层，其中所述自由层围绕磁静态平衡。
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公开(公告)号：US20100103783A1
公开(公告)日：2010-04-29
申请号：US12260924
申请日：2008-10-29
CPC分类号： G11B5/314 , G11B5/1278 , G11B5/3967 , G11B5/6064 , G11B2005/0005 , G11B2005/0021
摘要： A magnetic write head arranged to maximize efficiency of an optical device used to locally heat a magnetic medium during use, also to maximize efficiency of a heater element for thermal fly height control. The magnetic head is constructed with a read head, a write head and a slider body. The write head is located between the read head and the slider body. A heater element can be located between the read head and the write head and an optical device such as an optical waveguide can be located between the write head and the slider body. The write head can be constructed to have a write pole that is closer to the slider body than the return pole is, thereby allowing the write pole to be adjacent to the optical device.
摘要翻译： 一种磁性写入头，其布置成使用于在使用期间局部加热磁性介质的光学装置的效率最大化，同时最大化用于热飞行高度控制的加热器元件的效率。 磁头构造有读取头，写入头和滑块体。 写头位于读头和滑块体之间。 加热器元件可以位于读取头和写入头之间，并且诸如光学波导的光学装置可以位于写入头和滑块体之间。 写头可以被构造为具有比返回极更靠近滑块体的写入极，从而允许写入极与光学器件相邻。
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10.发明授权CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same 有权CPP读取传感器具有由具有周围的氧化金属子层的光刻定义的导电通孔制成的约束电流路径及其制造方法公开(公告)号：US07646570B2
公开(公告)日：2010-01-12
申请号：US11496604
申请日：2006-07-31
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F41/306 , H01F41/308 , Y10T29/49046 , Y10T29/49052
摘要： Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure. Advantageously, the lithographically-defined conductive vias increase the current density of the read sensor in the region of the sensing layers to thereby simultaneously increase its resistance and magnetoresistance. With use of the process of oxidation, nitridation, or oxynitridation on each metal sublayer, degradation of the spacer layer is reduced or eliminated such that the desirable soft magnetics of the sensing layers in the read sensor are maintained.
摘要翻译： 公开了具有由具有周围氧化金属子层的光刻定义的导电通孔制成的约束电流路径的电流垂直平面（CPP）读取传感器及其制造方法。 在一个说明性示例中，形成包括导电间隔层的传感器堆叠结构的至少一部分。 然后将金属（例如Ta）子层沉积在间隔层上并与其相邻，随后是氧化工艺，氮化工艺和氧氮化工艺中的一种，以从金属子层产生绝缘体（例如TaO x）。 根据需要重复金属亚层沉积和氧化/氮化/氧氮化处理以形成具有合适厚度的绝缘体。 接下来，在绝缘体上形成露出绝缘体的一个或多个部分的抗蚀剂结构。 在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体材料，以形成穿过绝缘体的一个或多个孔向下到间隔层。 导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。 有利地，光刻定义的导电通孔增加读取传感器在感测层的区域中的电流密度，从而同时增加其电阻和磁阻。 通过使用在每个金属子层上的氧化，氮化或氧氮化的过程，间隔层的劣化被减少或消除，使得保持读取传感器中感测层的期望的软磁性。
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