Conductive electrode pattern and solar cell with the same
    1.
    发明申请
    Conductive electrode pattern and solar cell with the same 审中-公开
    导电电极图案和太阳能电池相同

    公开(公告)号:US20110308844A1

    公开(公告)日:2011-12-22

    申请号:US12926336

    申请日:2010-11-10

    IPC分类号: H05K1/09 H01L31/0224 H01B5/00

    CPC分类号: H01L31/022425 Y02E10/50

    摘要: Disclosed herein is a conductive electrode pattern used as an electrode of a solar cell. The conductive electrode pattern includes a lower metal layer and an upper metal layer vertically disposed on a substrate, wherein any one of the lower metal layer and the upper metal layer includes silver (Ag) and the other one of the lower metal layer and the upper metal layer includes a metal of transition metals, different from that of the lower metal layer.

    摘要翻译: 这里公开了用作太阳能电池的电极的导电电极图案。 导电电极图案包括下金属层和垂直设置在基板上的上金属层,其中下金属层和上金属层中的任一个包括银(Ag),下金属层和上金属层中的另一个 金属层包括与下金属层不同的过渡金属的金属。

    Method for manufacturing vertically structured light emitting diode
    3.
    发明授权
    Method for manufacturing vertically structured light emitting diode 有权
    制造垂直结构发光二极管的方法

    公开(公告)号:US07473571B2

    公开(公告)日:2009-01-06

    申请号:US11541674

    申请日:2006-10-03

    IPC分类号: H01L21/00

    摘要: There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.

    摘要翻译: 提供了一种制造能够容易地进行芯片分离处理的垂直结构的LED的方法。 在该方法中,在具有多个器件区域和至少一个器件隔离区域的生长衬底上形成发光结构,其中,所述发光结构体具有n型覆盖层,有源层和p- 型覆盖层依次设置在生长基板上。 在发光结构上形成p电极。 此后,在p电极上形成第一镀层,使得它连接多个器件隔离区。 在器件区域的第一镀层上形成第二镀层的图案。 去除生长衬底,然后在n型覆盖层上形成n电极。