Abstract:
A monolithic capacitor structure includes opposed and overlapping plates within a dielectric body, which are arranged to form a lower frequency, higher value capacitor. Other conductive structure is located either inside the dielectric body or on an external surface thereof and is effective to form a higher frequency, lower value capacitor in parallel with the lower frequency, higher value capacitor. The resulting array of combined series and parallel capacitors integral with the dielectric body provides effective wideband performance in an integrated, cost-effective structure.
Abstract:
A monolithic capacitor structure includes opposed and overlapping plates within a dielectric body, which are arranged to form a lower frequency, higher value capacitor. Other conductive structure is located either inside the dielectric body or on an external surface thereof and is effective to form a higher frequency, lower value capacitor in parallel with the lower frequency, higher value capacitor. The resulting array of combined series and parallel capacitors integral with the dielectric body provides effective wideband performance in an integrated, cost-effective structure.
Abstract:
A ceramic capacitor typically 10 mils to 340 mils square by typically 4-20 mils thickness with areas of metallization, or pads, to which electrical connections may be made on, typically, each of two opposite exterior surfaces, has embedded at least one, and normally two or more, metallization planes at close, typically 0.5 mil, separation. Each interior metallization plane connects through multiple redundant vias, as are preferably made by (ii) punching, (ii) drilling, (iii) laser drilling, or (iv) radiation patterning of a green ceramic sheet having a photosensitive binder, to an associated surface pad or trace. The vias are both numerous and redundant, typically being of 2 mil diameter on 10 mil centers in a pin grid array pattern over and through entire ceramic layers of the capacitor, permitting both (i) easy fabrication without exacting alignment or registration between layers, and (ii) low Equivalent Series Resistance (ESR) in the finished capacitor. The composite structure so created exhibits increased capacitance over that which would alternatively exist should no electrically-connected interior metallization planes be present.
Abstract:
A capacitor device, which is mountable on a substrate, has an electrically conductive bottom lead frame with a bottom plate mountable substantially parallel to, and in contact with, the substrate and an electrically conductive top lead frame having a top plate spaced apart from the bottom plate and a first transition portion having a first end connected to the top plate and a second end, opposite the first end, electrically connectable to the substrate. Multilayer capacitors are mounted between the top plate and the bottom plate. The capacitors have opposed end terminations electrically connected to the top and bottom plates, such that internal electrode plates are substantially nonparallel to the substrate.
Abstract:
A monolithic capacitor structure includes opposed and overlapping plates within a dielectric body, which are arranged to form a lower frequency, higher value capacitor. Other conductive structure is located either inside the dielectric body or on an external surface thereof and is effective to form a higher frequency, lower value capacitor in parallel with the lower frequency, higher value capacitor. The resulting array of combined series and parallel capacitors integral with the dielectric body provides effective wideband performance in an integrated, cost-effective structure.
Abstract:
A capacitor including at least one interior metallization plane or plate and a multiplicity of vias for forming multiple redundant electrical connections within the capacitor. Series capacitors are provided having at least two interior plates redundantly electrically connected to at least two respective exterior plates. R-C devices are provided having multiple redundant vias filled with resistor material and/or conductor material to provide a resistor either in series with or parallel to a capacitor. Capacitors and R-C devices are provided having end terminations for applying voltage differential. Further, a method for making single capacitors, multiple parallel array capacitors, series capacitors and R-C devices is provided in which the chips are formed from the bottom up.
Abstract:
A capacitor including at least one interior metallization plane or plate and a multiplicity of vias for forming multiple redundant electrical connections within the capacitor. Series capacitors are provided having at least two interior plates redundantly electrically connected to at least two respective exterior plates. R-C devices are provided having multiple redundant vias filled with resistor material and/or conductor material to provide a resistor either in series with or parallel to a capacitor. Capacitors and R-C devices are provided having end terminations for applying voltage differential. Further, a method for making single capacitors, multiple parallel array capacitors, series capacitors and R-C devices is provided in which the chips are formed from the bottom up.
Abstract:
A capacitor device mountable on a plane of a substrate includes an electrically conductive bottom plate adapted to be mounted substantially parallel to, and in electrical contact at the plane of the substrate and a first multilayer capacitor having substantially parallel first and second electrode plates oriented substantially perpendicular to the bottom plate with the first electrode plates being electrically connected to the bottom plate. An electrically conductive top lead frame overlaps with, and is electrically isolated from, the bottom plate. The top lead frame electrically connected to the second electrode plates and adapted to be electrically connected at the plane of the substrate. The bottom lead frame may have a corrugated shape, where the corrugated shape provides compliance between the first multilayer capacitor and the substrate. A portion of the top lead frame may contact at least a portion of a side of the first multilayer capacitor.
Abstract:
A capacitor device mountable on a plane of a substrate includes an electrically conductive bottom plate adapted to be mounted substantially parallel to, and in electrical contact at the plane of the substrate and a first multilayer capacitor having substantially parallel first and second electrode plates oriented substantially perpendicular to the bottom plate with the first electrode plates being electrically connected to the bottom plate. An electrically conductive top lead frame overlaps with, and is electrically isolated from, the bottom plate. The top lead frame electrically connected to the second electrode plates and adapted to be electrically connected at the plane of the substrate. The bottom lead frame may have a corrugated shape, where the corrugated shape provides compliance between the first multilayer capacitor and the substrate. A portion of the top lead frame may contact at least a portion of a side of the first multilayer capacitor.
Abstract:
A capacitor device, which is mountable on a substrate, has an electrically conductive bottom lead frame with a bottom plate mountable substantially parallel to, and in contact with, the substrate and an electrically conductive top lead frame having a top plate spaced apart from the bottom plate and a first transition portion having a first end connected to the top plate and a second end, opposite the first end, electrically connectable to the substrate. Multilayer capacitors are mounted between the top plate and the bottom plate. The capacitors have opposed end terminations electrically connected to the top and bottom plates, such that internal electrode plates are substantially nonparallel to the substrate.