HIGH-INDEX CONTRAST WAVEGUIDE OPTICAL GYROSCOPE HAVING SEGMENTED PATHS
    1.
    发明申请
    HIGH-INDEX CONTRAST WAVEGUIDE OPTICAL GYROSCOPE HAVING SEGMENTED PATHS 有权
    高分辨率对比波形光学眼镜

    公开(公告)号:US20100328673A1

    公开(公告)日:2010-12-30

    申请号:US12525965

    申请日:2008-08-29

    IPC分类号: G01C19/64

    CPC分类号: G01C19/72

    摘要: A waveguide optical gyroscope is disclosed. The waveguide optical gyroscope includes a laser, two detectors, a set of couplers and a set of waveguides. The laser generates a light beam. A first waveguide guides the light beam to travel in a first direction, and a second waveguide guides the light beam to travel in a second direction. The first and second waveguides are coupled to several ring waveguides via the couplers. The first detector detects the arrival of the light beam traveling from the first waveguide, and the second detector detects the arrival of the light beam traveling from the second waveguide.

    摘要翻译: 公开了一种波导光学陀螺仪。 波导光学陀螺仪包括激光器,两个检测器,一组耦合器和一组波导。 激光产生光束。 第一波导引导光束沿第一方向行进,第二波导引导光束沿第二方向行进。 第一和第二波导通过耦合器耦合到多个环形波导。 第一检测器检测从第一波导传播的光束的到达,并且第二检测器检测从第二波导传播的光束的到达。

    Integrated optical latch
    2.
    发明授权
    Integrated optical latch 有权
    集成光锁存器

    公开(公告)号:US07848601B2

    公开(公告)日:2010-12-07

    申请号:US12718584

    申请日:2010-03-05

    IPC分类号: G02F1/035 G02F1/295 G02B6/42

    摘要: Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.

    摘要翻译: 公开了用于光交换和数据控制的技术,而没有电子切换速度的相互作用。 在一个示例性实施例中,提供了公共空腔光锁存器​​,其可以将光学状态保持延长的时间段,并且其操作被光学地控制。 光学相位控制允许使用入射光学信号在两个公共光学腔之间采用光学模式切换,以及空腔操纵其中的相位以锁定在一个或另一个结构中的方式,从而形成光学锁存器。 光锁存器以集成的方式实现,例如在CMOS环境中。

    Multi-thickness semiconductor with fully depleted devices and photonic integration
    3.
    发明授权
    Multi-thickness semiconductor with fully depleted devices and photonic integration 有权
    具有完全耗尽器件和光子整合的多厚度半导体

    公开(公告)号:US07847353B2

    公开(公告)日:2010-12-07

    申请号:US12328853

    申请日:2008-12-05

    IPC分类号: H01L27/12

    摘要: Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.

    摘要翻译: 公开了促进包括不同厚度的结构和器件的半导体的制造的技术。 一个实施例提供了一种用于半导体器件制造的方法,其包括使要形成器件的半导体晶片的区域变薄从而限定晶片的薄区域和厚区域。 该方法继续在厚区域上形成一个或多个光子器件和/或部分耗尽的电子器件,并且在薄区域上形成一个或多个完全耗尽的电子器件。 另一个实施例提供一种半导体器件,其包括限定薄区域和厚区域的半导体晶片。 该器件还包括形成在厚区域上的一个或多个光子器件和/或部分耗尽的电子器件,以及形成在薄区域上的一个或多个完全耗尽的电子器件。 可以在薄区域和厚区域之间形成隔离区域。

    Integrated Optical Latch
    4.
    发明申请
    Integrated Optical Latch 有权
    集成光锁

    公开(公告)号:US20100157402A1

    公开(公告)日:2010-06-24

    申请号:US12718584

    申请日:2010-03-05

    IPC分类号: G02F3/00

    摘要: Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.

    摘要翻译: 公开了用于光交换和数据控制的技术,而没有电子切换速度的相互作用。 在一个示例性实施例中,提供了公共空腔光锁存器​​,其可以将光学状态保持延长的时间段,并且其操作被光学地控制。 光学相位控制允许使用入射光学信号在两个公共光学腔之间采用光学模式切换,以及空腔操纵其中的相位以锁定在一个或另一个结构中的方式,从而形成光学锁存器。 光锁存器以集成的方式实现,例如在CMOS环境中。

    Integrated optical latch
    5.
    发明授权

    公开(公告)号:US07715663B2

    公开(公告)日:2010-05-11

    申请号:US12201784

    申请日:2008-08-29

    IPC分类号: G02F1/035 G02F1/295 G02B6/42

    摘要: Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.

    Method for the production of photo-patterned carbon electronics
    8.
    发明授权
    Method for the production of photo-patterned carbon electronics 失效
    生产光图案碳电子的方法

    公开(公告)号:US08076218B2

    公开(公告)日:2011-12-13

    申请号:US12497752

    申请日:2009-07-06

    IPC分类号: H01L21/00

    摘要: A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a first doping agent precursor and the first doping agent precursor and first layer of carbon based semiconductor are irradiated with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of the first layer of carbon based semiconductor.

    摘要翻译: 本文提供了一种用于制造碳基电气部件的方法。 在该方法中,提供晶片衬底,在其上沉积第一层碳基半导体层。 将第一层碳基半导体引入第一掺杂剂前体,并且用紫外光谱波长的光照射第一掺杂剂前体和碳基半导体的第一层,从而选择性地掺杂第一层碳基的区域 半导体。

    COMPONENTS AND CONFIGURATIONS FOR TEST AND VALUATION OF INTEGRATED OPTICAL BUSSES
    9.
    发明申请
    COMPONENTS AND CONFIGURATIONS FOR TEST AND VALUATION OF INTEGRATED OPTICAL BUSSES 有权
    组合和配置用于测试和评估集成光学总线

    公开(公告)号:US20100057394A1

    公开(公告)日:2010-03-04

    申请号:US12201823

    申请日:2008-08-29

    IPC分类号: G01R27/28 G01N21/00

    CPC分类号: G06F11/221

    摘要: An apparatus and method is provided for the testing of an optical bus, that method comprising: loading transmission test data and address information for at least one receiving cell via an electronic bus in a first register; setting a clock rate for the optical bus; employing the optical bus to transmit the test data from the first register to the at least one receiving cell; reading out received test data from the receiving cell via the electronic bus; correlating the received test data from the first register with the transmission test data; analyzing errors in the received data and handling of the received data by the bus.

    摘要翻译: 提供了一种用于测试光总线的装置和方法,该方法包括:经由第一寄存器中的电子总线加载用于至少一个接收小区的传输测试数据和地址信息; 设置光学总线的时钟速率; 使用所述光学总线将所述测试数据从所述第一寄存器传送到所述至少一个接收单元; 通过电子总线从接收单元读出接收到的测试数据; 将接收到的来自第一寄存器的测试数据与传输测试数据相关; 分析接收到的数据中的错误和总线对接收到的数据的处理。

    Method for manufacturing lateral germanium detectors
    10.
    发明授权
    Method for manufacturing lateral germanium detectors 失效
    制造侧向锗探测器的方法

    公开(公告)号:US08343792B2

    公开(公告)日:2013-01-01

    申请号:US12521853

    申请日:2008-10-27

    IPC分类号: H01L21/00

    CPC分类号: H01L27/1467

    摘要: An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.

    摘要翻译: 公开了用于制造侧向锗检测器的改进方法。 检测器窗口通过氧化物层打开以暴露位于衬底上的掺杂单晶硅层。 接下来,在检测器窗口内生长单晶锗层,并且在氧化物层上生长非晶锗层。 然后抛光无定形锗层以在单晶锗层周围仅留下一小部分。 介电层沉积在非晶锗层和单晶锗层上。 使用抗蚀剂掩模和离子注入,在单晶锗层上形成多个掺杂区。 在介电层上打开几个氧化物窗后,在掺杂区域上沉积难熔金属层以形成多个锗化物层。