摘要:
A waveguide optical gyroscope is disclosed. The waveguide optical gyroscope includes a laser, two detectors, a set of couplers and a set of waveguides. The laser generates a light beam. A first waveguide guides the light beam to travel in a first direction, and a second waveguide guides the light beam to travel in a second direction. The first and second waveguides are coupled to several ring waveguides via the couplers. The first detector detects the arrival of the light beam traveling from the first waveguide, and the second detector detects the arrival of the light beam traveling from the second waveguide.
摘要:
Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.
摘要:
Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.
摘要:
Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.
摘要:
Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.
摘要:
A method for fabricating a thermal optical heating element capable of adjusting refractive index of an optical waveguide is disclosed. A silicon block is initially formed on a cladding layer on a silicon substrate. The silicon block is located in close proximity to an optical waveguide. A cobalt layer is deposited on the silicon block. The silicon block is then annealed to cause the cobalt layer to react with the silicon block to form a cobalt silicide layer. The silicon block is again annealed to cause the cobalt silicide layer to transform into a cobalt di-silicide layer.
摘要:
A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.
摘要:
A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a first doping agent precursor and the first doping agent precursor and first layer of carbon based semiconductor are irradiated with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of the first layer of carbon based semiconductor.
摘要:
An apparatus and method is provided for the testing of an optical bus, that method comprising: loading transmission test data and address information for at least one receiving cell via an electronic bus in a first register; setting a clock rate for the optical bus; employing the optical bus to transmit the test data from the first register to the at least one receiving cell; reading out received test data from the receiving cell via the electronic bus; correlating the received test data from the first register with the transmission test data; analyzing errors in the received data and handling of the received data by the bus.
摘要:
An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.