公开(公告)号：US20100092682A1

公开(公告)日：2010-04-15

申请号：US12521855

申请日：2008-08-29

申请人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T.S. Pomerene ,  Thomas J. McIntyre ,  Timothy J. Conway ,  Jonathan N. Ishii

发明人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T.S. Pomerene ,  Thomas J. McIntyre ,  Timothy J. Conway ,  Jonathan N. Ishii

IPC分类号： B05D3/02

CPC分类号： G02B6/10 ,  G02B6/12033 ,  G02F1/011 ,  G02F1/0147

摘要： A method for fabricating a thermal optical heating element capable of adjusting refractive index of an optical waveguide is disclosed. A silicon block is initially formed on a cladding layer on a silicon substrate. The silicon block is located in close proximity to an optical waveguide. A cobalt layer is deposited on the silicon block. The silicon block is then annealed to cause the cobalt layer to react with the silicon block to form a cobalt silicide layer. The silicon block is again annealed to cause the cobalt silicide layer to transform into a cobalt di-silicide layer.

摘要翻译： 公开了一种制造能够调节光波导的折射率的热光学加热元件的方法。 最初在硅衬底上的包覆层上形成硅块。 硅块位于靠近光波导的位置。 钴层沉积在硅块上。 然后将硅块退火以使钴层与硅块反应形成硅化钴层。 再次退火硅块以使硅化钴层转变成二硅化钴层。

公开(公告)号：US20090111200A1

公开(公告)日：2009-04-30

申请号：US12201943

申请日：2008-08-29

申请人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T.S. Pomerene ,  Timothy J. Conway ,  Rick L. Thompson ,  Vu A. Vu ,  Robert Kamocsai ,  Joe Giunta ,  Jonathan N. Ishii

发明人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T.S. Pomerene ,  Timothy J. Conway ,  Rick L. Thompson ,  Vu A. Vu ,  Robert Kamocsai ,  Joe Giunta ,  Jonathan N. Ishii

IPC分类号： H01L21/02

CPC分类号： H01L27/0617

摘要： A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.

摘要翻译： 公开了一种在衬底上制造光子和电子器件的方法。 最初对多个板坯进行图案化并在衬底层上进行蚀刻。 在第一板上制造电子器件，并且在第二板上制造光子器件，使得电子器件和光子器件形成在基片的同一层上。

公开(公告)号：US07811844B2

公开(公告)日：2010-10-12

申请号：US12201943

申请日：2008-08-29

申请人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T. S. Pomerene ,  Timothy J. Conway ,  Rick L. Thompson ,  Vu A. Vu ,  Robert Kamocsai ,  Joe Giunta ,  Jonathan N. Ishii

发明人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T. S. Pomerene ,  Timothy J. Conway ,  Rick L. Thompson ,  Vu A. Vu ,  Robert Kamocsai ,  Joe Giunta ,  Jonathan N. Ishii

IPC分类号： H01L21/00

CPC分类号： H01L27/0617

摘要： A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.

摘要翻译： 公开了一种在衬底上制造光子和电子器件的方法。 最初对多个板坯进行图案化并在衬底层上进行蚀刻。 在第一板上制造电子器件，并且在第二板上制造光子器件，使得电子器件和光子器件形成在基片的同一层上。

公开(公告)号：US07736934B2

公开(公告)日：2010-06-15

申请号：US12517712

申请日：2008-10-20

申请人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T. S. Pomerene ,  Vu A. Vu ,  Joe Giunta ,  Jonathan N. Ishii

发明人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T. S. Pomerene ,  Vu A. Vu ,  Joe Giunta ,  Jonathan N. Ishii

IPC分类号： H01L21/00

CPC分类号： H01L31/1808 ,  H01L31/105 ,  H01L31/1055 ,  Y02E10/50

摘要： An improved method for manufacturing a vertical germanium detector is disclosed. Initially, a detector window is opened through an oxide layer on a single crystalline substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished and removed until only a portion of the amorphous germanium layer is located around the single crystal germanium layer. A tetraethyl orthosilicate (TEOS) layer is deposited on the amorphous germanium layer and the single crystal germanium layer. An implant is subsequently performed on the single crystal germanium layer. After an oxide window has been opened on the TEOS layer, a titanium layer is deposited on the single crystal germanium layer to form a vertical germanium detector.

摘要翻译： 公开了用于制造垂直锗探测器的改进方法。 最初，检测器窗口通过单晶衬底上的氧化物层开放。 接下来，在检测器窗口内生长单晶锗层，并且在氧化物层上生长非晶锗层。 然后抛光和去除无定形锗层，直到只有一部分非晶锗层位于单晶锗层周围。 在无定形锗层和单晶锗层上沉积原硅酸四乙酯（TEOS）层。 随后在单晶锗层上进行植入。 在TEOS层上打开氧化物窗后，在单晶锗层上沉积钛层以形成垂直锗检测器。

公开(公告)号：US20100029033A1

公开(公告)日：2010-02-04

申请号：US12517712

申请日：2008-10-20

申请人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T.S. Pomerene ,  Vu A. Vu ,  Joe Giunta ,  Jonathan N. Ishii

发明人： Daniel N. Carothers ,  Craig M. Hill ,  Andrew T.S. Pomerene ,  Vu A. Vu ,  Joe Giunta ,  Jonathan N. Ishii

IPC分类号： H01L31/0232

CPC分类号： H01L31/1808 ,  H01L31/105 ,  H01L31/1055 ,  Y02E10/50

摘要： An improved method for manufacturing a vertical germanium detector is disclosed. Initially, a detector window is opened through an oxide layer on a single crystalline substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished and removed until only a portion of the amorphous germanium layer is located around the single crystal germanium layer. A tetraethyl orthosilicate (TEOS) layer is deposited on the amorphous germanium layer and the single crystal germanium layer. An implant is subsequently performed on the single crystal germanium layer. After an oxide window has been opened on the TEOS layer, a titanium layer is deposited on the single crystal germanium layer to form a vertical germanium detector.

摘要翻译： 公开了用于制造垂直锗探测器的改进方法。 最初，检测器窗口通过单晶衬底上的氧化物层开放。 接下来，在检测器窗口内生长单晶锗层，并且在氧化物层上生长非晶锗层。 然后抛光和去除无定形锗层，直到只有一部分非晶锗层位于单晶锗层周围。 在无定形锗层和单晶锗层上沉积原硅酸四乙酯（TEOS）层。 随后在单晶锗层上进行植入。 在TEOS层上打开氧化物窗后，在单晶锗层上沉积钛层以形成垂直锗检测器。