公开(公告)号：US20100087062A1

公开(公告)日：2010-04-08

申请号：US12246374

申请日：2008-10-06

申请人： Annamalai Lakshmanan ,  Dante Manalo ,  Nagarajan Rajagopalan ,  Francimar C. Schmitt ,  Bok Hoen Kim

发明人： Annamalai Lakshmanan ,  Dante Manalo ,  Nagarajan Rajagopalan ,  Francimar C. Schmitt ,  Bok Hoen Kim

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/76801

摘要： A method and apparatus for depositing organosilicate dielectric layers having good adhesion properties and low dielectric constant. Embodiments are described in which layers are deposited at low temperature and at high temperature. The low temperature layers are generally post-treated, whereas the high temperature layers need no post treating. Adhesion of the layers is promoted by use of an initiation layer.

摘要翻译： 一种用于沉积具有良好粘合性能和低介电常数的有机硅酸盐电介质层的方法和装置。 描述了在低温和高温下沉积层的实施例。 低温层通常经过后处理，而高温层不需要后处理。 通过使用起始层促进层的附着。