公开(公告)号：US20140256127A1

公开(公告)日：2014-09-11

申请号：US13787499

申请日：2013-03-06

Applicant: Tighe A. Spurlin ,  Darcy E. Lambert ,  Durgalakshmi Singhal ,  Andy Antonelli

Inventor： Tighe A. Spurlin ,  Darcy E. Lambert ,  Durgalakshmi Singhal ,  Andy Antonelli

IPC: H01L21/768

CPC classification number: H01L21/76873 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/1851 ,  C23C18/1865 ,  C23C18/1868 ,  C25D17/001 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/76861 ,  H01L21/76862

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer on a substrate by exposing the metal oxide surfaces to a reducing gas atmosphere comprising radicals of a reducing gas species. The radicals of the reducing gas species can form from exposing the reducing gas species to ultraviolet radiation and/or a plasma. The substrate is maintained at a temperature below a temperature that produces agglomeration of the metal seed layer during exposure to the reducing gas atmosphere, such as below 150° C. for copper. In some embodiments, the reducing gas species can include at least one of hydrogen, ammonia, carbon monoxide, diborane, sulfite compounds, carbon and/or hydrocarbons, phosphites, and hydrazine.

Abstract translation: 公开了将金属氧化物表面还原成改性金属表面的方法和装置。 通过将金属氧化物表面暴露于包含还原气体种类的自由基的还原气体气氛中，金属氧化物表面被还原以形成与基底上的金属种子层一体化的膜。 还原气体种类的自由基可以通过将还原气体物质暴露于紫外线和/或等离子体而形成。 将基底保持在低于在暴露于还原气体气氛中的金属种子层附近的温度的温度，例如对于铜低于150℃。 在一些实施方案中，还原气体种类可以包括氢，氨，一氧化碳，乙硼烷，亚硫酸盐化合物，碳和/或烃，亚磷酸酯和肼中的至少一种。