公开(公告)号：US06221567B1

公开(公告)日：2001-04-24

申请号：US09226974

申请日：1999-01-08

申请人： Solomon I. Beilin ,  William T. Chou ,  David Dung Ngo

发明人： Solomon I. Beilin ,  William T. Chou ,  David Dung Ngo

IPC分类号： G03F700

CPC分类号： H01L21/31133 ,  G03F7/40 ,  H01L21/02071

摘要： Methods of etching polyamic acid layers and the like are disclosed. In exemplary embodiments of the present invention, the polymeric acid layer to be etched is alternatively exposed to etchant solutions (etchants) and rinse solutions, where the etchant solutions are of relatively moderate alkalinity and the rinse solutions have a lower pH than the etchant solutions. The present invention enables polymeric acid layers to be developed with standard basic etchants at relatively moderate concentrations and at room temperature with little, if any, corrosion to any underlying metal layers. The present invention enables the more reliable and cleaner spin-spray processing method to be employed, thereby significantly increasing yields and reducing overall processing costs. The present invention also enables the etching of thick layers of polymeric acid without the need for special treatments, such as exposure to highly concentrated etchant solutions or high temperature processing conditions.

摘要翻译： 公开了蚀刻聚酰胺酸层等的方法。 在本发明的示例性实施方案中，要蚀刻的聚合酸性层可选地暴露于蚀刻剂溶液（蚀刻剂）和冲洗溶液，其中蚀刻剂溶液具有相对中等的碱度，并且冲洗溶液具有比蚀刻剂溶液更低的pH。 本发明使聚合酸层能够以相对中等浓度和室温下用标准碱性蚀刻剂显影，对任何下面的金属层几乎没有任何腐蚀。 本发明使得能够采用更可靠和更清洁的旋喷处理方法，从而显着提高产量并降低整体加工成本。 本发明还能够对聚合酸的厚层进行蚀刻，而不需要特殊处理，例如暴露于高度浓缩的蚀刻剂溶液或高温加工条件下。

公开(公告)号：US06226171B1

公开(公告)日：2001-05-01

申请号：US09227239

申请日：1999-01-08

申请人： Solomon I. Beilin ,  William T. Chou ,  Michael G. Lee ,  David Dung Ngo ,  Michael G. Peters ,  James J. Roman ,  Yasuhito Takahashi

发明人： Solomon I. Beilin ,  William T. Chou ,  Michael G. Lee ,  David Dung Ngo ,  Michael G. Peters ,  James J. Roman ,  Yasuhito Takahashi

IPC分类号： H01G4228

CPC分类号： H01L23/50 ,  H01L23/5383 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/056 ,  H05K1/162 ,  H05K3/045 ,  H05K3/388 ,  H05K3/44 ,  H05K2201/0154 ,  H05K2201/0195 ,  H05K2201/09481 ,  H05K2201/09509 ,  H05K2201/09554 ,  H05K2203/0315 ,  H01L2924/00

摘要： Several inventive features for increasing the yield of substrate capacitors are disclosed. The inventive features relating to selective placement of insulating layers and patches around selected areas of the capacitor's main dielectric layer. These insulating layers and defects prevent certain manufacturing processing steps from creating pin-hole defects in the main dielectric layer. The inventive features are suitable for any type of material for the main dielectric layer, and are particularly suited to anodized dielectric layers.

摘要翻译： 公开了用于增加基板电容器的产量的几个发明特征。 本发明的特征涉及在电容器的主介电层的选定区域周围选择性地放置绝缘层和贴片。 这些绝缘层和缺陷防止某些制造处理步骤在主介电层中产生针孔缺陷。 本发明的特征适合于用于主介电层的任何类型的材料，并且特别适用于阳极化电介质层。