Clamped cathode power supply for image intensifier
    1.
    发明授权
    Clamped cathode power supply for image intensifier 有权
    用于图像增强器的钳位阴极电源

    公开(公告)号:US09230783B2

    公开(公告)日:2016-01-05

    申请号:US13535629

    申请日:2012-06-28

    CPC classification number: H01J40/14 H01J29/98 H01J31/507

    Abstract: A power supply for an image intensifier, the power supply including a DC voltage source generating a photocathode voltage; a bright source protection (BSP) resistor in series with the DC voltage source; and an oscillator in parallel with the DC voltage source and the BSP resistor, the oscillator providing an AC voltage component, the AC voltage component having a fixed pulse width, the AC voltage component being coupled to the photocathode by a diode, the pulse width and shape of the AC voltage component on the photocathode being determined by the photocathode current.

    Abstract translation: 一种用于图像增强器的电源,所述电源包括产生光电阴极电压的DC电压源; 与直流电压源串联的亮源保护(BSP)电阻; 以及与所述直流电压源和所述BSP电阻并联的振荡器,所述振荡器提供交流电压分量,所述交流电压分量具有固定的脉冲宽度,所述交流电压分量通过二极管耦合到所述光电阴极,所述脉冲宽度和 光电阴极上的AC电压分量的形状由光电阴极电流确定。

    Clamped Cathode Power Supply For Image Intensifier
    2.
    发明申请
    Clamped Cathode Power Supply For Image Intensifier 有权
    用于图像增强器的钳形阴极电源

    公开(公告)号:US20140001967A1

    公开(公告)日:2014-01-02

    申请号:US13535629

    申请日:2012-06-28

    CPC classification number: H01J40/14 H01J29/98 H01J31/507

    Abstract: A power supply for an image intensifier, the power supply including a DC voltage source generating a photocathode voltage; a bright source protection (BSP) resistor in series with the DC voltage source; and an oscillator in parallel with the DC voltage source and the BSP resistor, the oscillator providing an AC voltage component, the AC voltage component having a fixed pulse width, the AC voltage component being coupled to the photocathode by a diode, the pulse width and shape of the AC voltage component on the photocathode being determined by the photocathode current.

    Abstract translation: 一种用于图像增强器的电源,所述电源包括产生光电阴极电压的DC电压源; 与直流电压源串联的亮源保护(BSP)电阻; 以及与所述直流电压源和所述BSP电阻并联的振荡器,所述振荡器提供交流电压分量,所述交流电压分量具有固定的脉冲宽度,所述交流电压分量通过二极管耦合到所述光电阴极,所述脉冲宽度和 光电阴极上的AC电压分量的形状由光电阴极电流确定。

    Temperature sensor
    3.
    发明授权
    Temperature sensor 失效
    温度感应器

    公开(公告)号:US07312690B1

    公开(公告)日:2007-12-25

    申请号:US11614243

    申请日:2006-12-21

    Applicant: David Geer

    Inventor: David Geer

    CPC classification number: G01K1/12 G01K7/22 G01K2205/04

    Abstract: A temperature sensor includes a probe section for insertion into a hot zone. The probe section includes a thermistor, a first lengthy pin terminating at the thermistor, and a second lengthy pin also terminating at the thermistor. A housing section is on one end of the probe section and outside of the hot zone. The housing section includes a first spring which biases the first pin into contact with the thermistor, a second spring which biases the second pin into contact with the thermistor, a first electrical contact engaged with the first spring, and a second electrical contact engaged with the second spring.

    Abstract translation: 温度传感器包括用于插入热区的探针部分。 探针部分包括热敏电阻,终止于热敏电阻的第一冗长的引脚,以及也终止于热敏电阻的第二长度的引脚。 壳体部分位于探头部分的一端和热区外部。 壳体部分包括第一弹簧,其将第一销偏压到与热敏电阻接触;第二弹簧,其将第二销偏压到与热敏电阻接触;第一电触点,与第一弹簧接合;以及第二电触点, 第二春

    Thermistor having doped and undoped layers of material
    4.
    发明申请
    Thermistor having doped and undoped layers of material 失效
    具有掺杂和未掺杂材料层的热敏电阻

    公开(公告)号:US20070126548A1

    公开(公告)日:2007-06-07

    申请号:US11648919

    申请日:2007-01-03

    CPC classification number: H01C7/008 H01C17/08 Y10T29/49082 Y10T29/49083

    Abstract: According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.

    Abstract translation: 根据一些实施例,可以提供第一掺杂材料层以形成电阻器。 然后可以在第一层上形成第二层未掺杂的材料。 第一层可以包括例如掺杂碳化硅层,而第二层包括未掺杂的碳化硅层。 然后可以测量电阻器的电阻以确定温度。

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