公开(公告)号：US20130194881A1

公开(公告)日：2013-08-01

申请号：US13878419

申请日：2011-11-07

Applicant: Steven C. Woo ,  Amir Amirkhany ,  Catherine Chen ,  David Secker ,  Jie Shen

Inventor： Steven C. Woo ,  Amir Amirkhany ,  Catherine Chen ,  David Secker ,  Jie Shen

IPC: G11C7/00

CPC classification number: G11C7/00 ,  G06F13/1694

Abstract: One or more pins may be modally assigned to either the command/address (C/A) or data (DQ) blocks of a uniform-package, multi-modal PHY (physical signaling interface) of a memory controller, thus enabling those pins to be used as C/A pins when the PHY is connected to some memory types, and as DQ pins when the PHY is connected to other memory types.

Abstract translation: 一个或多个引脚可以被模式地分配给存储器控制器的均匀封装，多模态PHY（物理信令接口）的命令/地址（C / A）或数据（DQ）块，从而使得这些引脚 当PHY连接到某些存储器类型时，用作C / A引脚，当PHY连接到其他存储器类型时用作引脚。

公开(公告)号：US08588012B2

公开(公告)日：2013-11-19

申请号：US13149896

申请日：2011-06-01

Applicant: John Wilson ,  Joong-Ho Kim ,  Ravindranath Kollipara ,  David Secker ,  Kyung Suk Oh

Inventor： John Wilson ,  Joong-Ho Kim ,  Ravindranath Kollipara ,  David Secker ,  Kyung Suk Oh

IPC: G11C7/00

CPC classification number: G06F13/4086 ,  G06F13/4234

Abstract: Termination of a high-speed signaling link is effected by simultaneously engaging on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link.

Abstract translation: 高速信令链路的终止通过同时接合设置在同一存储器模块上的多个集成电路存储器件中的片上端接结构和/或在相同的集成电路封装内并且耦合到高速信号链路 信令链路。

公开(公告)号：US20110314200A1

公开(公告)日：2011-12-22

申请号：US13149896

申请日：2011-06-01

Applicant: John Wilson ,  Joong-Ho Kim ,  Ravindranath Kollipara ,  David Secker ,  Kyung Suk Oh

Inventor： John Wilson ,  Joong-Ho Kim ,  Ravindranath Kollipara ,  David Secker ,  Kyung Suk Oh

IPC: G06F13/16

CPC classification number: G06F13/4086 ,  G06F13/4234

Abstract: Termination of a high-speed signaling link is effected by simultaneously engaging on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link.

Abstract translation: 高速信令链路的终止通过同时接合设置在同一存储器模块上的多个集成电路存储器件中的片上端接结构和/或在相同的集成电路封装内并且耦合到高速信号链路 信令链路。

公开(公告)号：US20110049091A1

公开(公告)日：2011-03-03

申请号：US12546681

申请日：2009-08-25

Applicant: Yao Fu ,  Yi-Wen Tsai ,  Darrell LaRue McReynolds ,  David Secker ,  Valerie Bordelanne ,  Witold Wiscniewski

Inventor： Yao Fu ,  Yi-Wen Tsai ,  Darrell LaRue McReynolds ,  David Secker ,  Valerie Bordelanne ,  Witold Wiscniewski

IPC: C23F1/00 ,  B08B5/00

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/052 ,  B81C1/00476 ,  G03F7/427

Abstract: A method of photoresist removal with concomitant de-veiling is provided. The method employs a plasma formed from a gas chemistry comprising O2, NH3 and a fluorine-containing gas, such as CF4. The method is particularly suitable for use in MEMS fabrication processes, such as inkjet printhead fabrication.

Abstract translation: 提供了一种同时进行光刻胶去除的方法。 该方法采用由包含O 2，NH 3和含氟气体如CF 4的气体化学物质形成的等离子体。 该方法特别适用于MEMS制造工艺，例如喷墨打印头制造。