公开(公告)号：US06956333B2

公开(公告)日：2005-10-18

申请号：US10339119

申请日：2003-01-09

申请人： Harald Brune ,  Detlev Gruetzmacher

发明人： Harald Brune ,  Detlev Gruetzmacher

IPC分类号： H01L51/50 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J31/12 ,  H01J37/073 ,  H01L21/027 ,  H01L51/52 ,  G09G3/10

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01L51/5203

摘要： This invention relates to a device for emitting addressable locations comprises parallel spaced-apart first conductors (10) intersecting with parallel spaced-apart second conductors (11). The intersecting first and second conductors define addressable locations where electrons (12) are emitted in response to the application of an energizing voltage. One face of the first conductors is covered with an insulating layer (13) against which the second conductors (11) are applied, this insulating layer (13) forming a tunnel barrier for hot electrons (12) that travel ballistically through and are emitted from the second conductors (11) in response to the application of the energizing voltage. The emitted electrons impinge a target (30, 40, 50) which can be a light-emitting screen of a flat panel display, such as an electroluminescent polymer of a flat panel screen, or an electroluminescent phosphorous screen, or a target wafer bombarded by the electrons emitted from a flexible e-beam lithography mask. The intersecting conductors (10, 11) can be Al wires, or can be produced by C-MOS technology.

摘要翻译： 本发明涉及一种用于发射可寻址位置的装置，包括与平行间隔开的​​第二导体（11）相交的平行间隔开的​​第一导体（10）。 相交的第一和第二导体限定可响应于施加电压的电子（12）被发射的寻址位置。 第一导体的一个面覆盖有施加第二导体（11）的绝缘层（13），该绝缘层（13）形成用于热电子（12）的隧道势垒，弹性传播通过并从其中发射 所述第二导体（11）响应于施加所述激励电压。 发射的电子撞击可以是平板显示器的发光屏的靶（30,40,50），例如平板屏幕的电致发光聚合物或电致发光磷屏，或由 从柔性电子束光刻掩模发射的电子。 交叉导体（10,11）可以是Al线，或者可以通过C-MOS技术制造。

公开(公告)号：US20060228872A1

公开(公告)日：2006-10-12

申请号：US11093645

申请日：2005-03-30

申请人： Bich-Yen Nguyen ,  Shawn Thomas ,  Lubomir Cergel ,  Mariam Sadaka ,  Voon-Yew Thean ,  Peter Wennekers ,  Ted White ,  Andreas Wild ,  Detlev Gruetzmacher ,  Oliver Schmidt

发明人： Bich-Yen Nguyen ,  Shawn Thomas ,  Lubomir Cergel ,  Mariam Sadaka ,  Voon-Yew Thean ,  Peter Wennekers ,  Ted White ,  Andreas Wild ,  Detlev Gruetzmacher ,  Oliver Schmidt

IPC分类号： H01L21/20

CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/7842 ,  H01L29/78648 ,  H01L29/78687

摘要： A method of forming a semiconductor device includes forming a local strain-inducing structure of a first semiconductor material at a point location within a dielectric layer. The local strain-inducing structure has a prescribed geometry with a surface disposed above a surface of the dielectric layer. A second semiconductor material is formed over the dielectric layer and the local strain inducing structure, wherein formation of a first portion of the second material over the dielectric layer provides a poly crystalline structure of the second material and wherein formation of a second portion of the second material over the local strain-inducing structure provides a single crystalline structure of the second material subject to mechanical strain by the surface of the local strain-inducing structure. The single crystalline structure serves as a strained semiconductor layer of the semiconductor device.

摘要翻译： 形成半导体器件的方法包括在电介质层内的点位置形成第一半导体材料的局部应变诱导结构。 局部应变诱导结构具有规定的几何形状，其表面设置在电介质层的表面之上。 第二半导体材料形成在电介质层和局部应变诱导结构之上，其中第二材料的第一部分在电介质层上的形成提供了第二材料的多晶结构，并且其中形成第二材料的第二部分 局部应变诱导结构上的材料提供由局部应变诱导结构的表面经受机械应变的第二材料的单晶结构。 单晶结构用作半导体器件的应变半导体层。

公开(公告)号：US20060226492A1

公开(公告)日：2006-10-12

申请号：US11094008

申请日：2005-03-30

申请人： Bich-Yen Nguyen ,  Shawn Thomas ,  Lubomir Cergel ,  Mariam Sadaka ,  Voon-Yew Thean ,  Peter Wennekers ,  Ted White ,  Andreas Wild ,  Detlev Gruetzmacher ,  Oliver Schmidt

发明人： Bich-Yen Nguyen ,  Shawn Thomas ,  Lubomir Cergel ,  Mariam Sadaka ,  Voon-Yew Thean ,  Peter Wennekers ,  Ted White ,  Andreas Wild ,  Detlev Gruetzmacher ,  Oliver Schmidt

IPC分类号： H01L29/94

CPC分类号： H01L29/78696 ,  H01L29/0649 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/7842 ,  H01L29/78648 ,  H01L29/78687

摘要： A semiconductor device includes a mechanically strained channel, wherein the channel comprises of a single crystalline structure of a strained semiconductor layer having a non-linear geometry, the non-linear geometry including a portion of an arch shape. The semiconductor device further includes a dielectric layer, wherein a first portion of the channel is disposed overlying a point location within the dielectric layer and a second portion of the channel is disposed overlying a portion of the dielectric layer proximate to and outside of the point location. In addition, a gate is disposed proximate to the channel for controlling current flow through the channel between first and second current handling electrodes that are coupled to the channel.

摘要翻译： 半导体器件包括机械应变通道，其中通道包括具有非线性几何形状的应变半导体层的单晶结构，非线性几何形状包括拱形部分。 所述半导体器件还包括介电层，其中所述沟道的第一部分设置在所述电介质层内的点位置上方，并且所述沟道的第二部分设置在所述电介质层的靠近所述点位置和外部的位置 。 此外，栅极靠近通道设置，用于控制电流通过耦合到通道的第一和第二电流处理电极之间的通道。