摘要:
An EUV illumination system comprises an EUV radiation source unit (1) and at least one EUV radiation-reflecting mirror (10), which mirror comprises a multilayer structure of first layers (12) of a first material alternating with second layers (13) of a second material, and which radiation source unit comprises an electron source (2) for supplying an electron beam (EB) and a medium (3) which converts the electron beam into a beam of photons (IB). As the medium (3) comprises at least one material that is equal to one of the materials of the mirror multilayer structure, the photon beam (IB) has a relatively large intensity.
摘要:
The present invention relates to a device for mixing light. More specifically, the invention relates to a device for mixing light 100 comprising at least two light sources wherein a first light source 101 emit light of a first wavelength and a second light source 102 emit light of a second wavelength, and further comprising at least one light guide 103 which has a diffraction grating 104 for outcoupling of light and a facet for each of the at least two light sources for incoupling of light, whereby a first facet 105 is adapted to couple light of the first wavelength into the at least one light guide 103, and a second facet 106 is adapted to couple light of the second wavelength into the at least one light guide 103.
摘要:
Method of polishing a surface (5a) of copper or an alloy comprising mainly copper, in which a polishing means is moved across the surface while exerting a polishing pressure of approximately 500 g/cm.sup.2 for obtaining a plane and smooth polished surface without any defects. A composition of a polishing component comprising a colloidal suspension of SiO.sub.2 particles having an average particle size of between 20 and 50 nm in an alkali solution, demineralized water and a chemical activator is used as a polishing means.
摘要翻译:抛光铜或主要是铜的合金的表面(5a)的方法,其中抛光装置在表面上移动,同时施加约500g / cm 2的抛光压力,以获得平面和光滑的抛光表面而没有任何缺陷。 作为研磨装置,使用在碱溶液,软化水和化学活化剂中含有平均粒径为20〜50nm的SiO 2颗粒的胶体悬浮液的组合物。