公开(公告)号：US20080213970A1

公开(公告)日：2008-09-04

申请号：US12014883

申请日：2008-01-16

申请人： Donata PICCOLO ,  Lorena Katia Beghin ,  Marcello Mariani ,  Chiara Savardi

发明人： Donata PICCOLO ,  Lorena Katia Beghin ,  Marcello Mariani ,  Chiara Savardi

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/76232

摘要： A process for forming a dielectric isolation structure on a silicon substrate includes forming at least one trench in the substrate, performing a high-temperature treatment in an oxidizing environment to form a first liner layer of silicon dioxide on the walls and the bottom of the trench, and performing a silicon dioxide deposition treatment to form a second liner layer on the first liner layer. A silicon nitride deposition treatment is also performed to form a third liner layer on the second liner layer. The trench is filled with isolating material.

摘要翻译： 在硅衬底上形成电介质隔离结构的工艺包括在衬底中形成至少一个沟槽，在氧化环境中进行高温处理，以在沟槽的壁和底部形成二氧化硅的第一衬里层 ，并且进行二氧化硅沉积处理以在第一衬里层上形成第二衬里层。 还进行氮化硅沉积处理以在第二衬里层上形成第三衬里层。 沟槽填充有隔离材料。

公开(公告)号：US20050009294A1

公开(公告)日：2005-01-13

申请号：US10853565

申请日：2004-05-25

申请人： Donata Piccolo ,  Lorena Beghin ,  Marcello Mariani ,  Chiara Savardi

发明人： Donata Piccolo ,  Lorena Beghin ,  Marcello Mariani ,  Chiara Savardi

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/76232

摘要： A process for forming a dielectric isolation structure on a silicon substrate includes forming at least one trench in the substrate, performing a high-temperature treatment in an oxidizing environment to form a first liner layer of silicon dioxide on the walls and the bottom of the trench, and performing a silicon dioxide deposition treatment to form a second liner layer on the first liner layer. A silicon nitride deposition treatment is also performed to form a third liner layer on the second liner layer. The trench is filled with isolating material.

摘要翻译： 在硅衬底上形成电介质隔离结构的工艺包括在衬底中形成至少一个沟槽，在氧化环境中进行高温处理，以在沟槽的壁和底部形成二氧化硅的第一衬里层 ，并且进行二氧化硅沉积处理以在第一衬里层上形成第二衬里层。 还进行氮化硅沉积处理以在第二衬里层上形成第三衬里层。 沟槽填充有隔离材料。

公开(公告)号：US06672110B2

公开(公告)日：2004-01-06

申请号：US09465016

申请日：1999-12-16

申请人： Giacomo Stefano Roba ,  Marco Arimondi ,  Donata Piccolo ,  Sabrina Fogliani

发明人： Giacomo Stefano Roba ,  Marco Arimondi ,  Donata Piccolo ,  Sabrina Fogliani

IPC分类号： C03B3707

CPC分类号： B01J19/26 ,  B01J19/0013 ,  B01J2219/00135 ,  B01J2219/00252 ,  C03B37/01413 ,  C03B37/0142 ,  C03B2201/31 ,  C03B2207/34 ,  C03B2207/36 ,  C03B2207/46 ,  C03B2207/62 ,  C03B2207/64 ,  C03B2207/85

摘要： A method for manufacturing a glass preform includes supplying a first gaseous or vapor phase composition to a reaction chamber; supplying water as a second gaseous or vapor phase composition to the reaction chamber; reacting the water and the first gaseous or vapor phase composition to form an aerosol of glass particles; directing the aerosol along the reaction chamber, out of the reaction chamber, and toward a target; and depositing glass particles of the aerosol onto the target. The first gaseous or vapor phase composition is disposed to provide a hydrolyzable glass precursor. Walls of the reaction chamber have a temperature gradient in which a temperature of the walls increases in a direction of flow of the aerosol along the reaction chamber. Alternatively, a flow of the aerosol along the reaction chamber has a temperature gradient in which a temperature of the aerosol increases in the direction of flow.

摘要翻译： 制造玻璃预制棒的方法包括：向反应室供应第一气相或气相组合物; 将水作为第二气相或气相组合物供应到所述反应室; 使水和第一气态或气相组合物反应以形成玻璃颗粒气溶胶; 将气溶胶沿着反应室引导出反应室，并朝向目标; 并将气溶胶的玻璃颗粒沉积在靶上。 设置第一气态或气相组合物以提供可水解的玻璃前体。 反应室的壁具有温度梯度，其中壁的温度沿气溶胶沿着反应室的流动方向增加。 或者，气溶胶沿着反应室的流动具有其中气溶胶的温度在流动方向上增加的温度梯度。