公开(公告)号：US20090068585A1

公开(公告)日：2009-03-12

申请号：US12208880

申请日：2008-09-11

申请人： Dong-Woo HAN ,  Jeong-Sik Kim ,  Min-Ja Yoo ,  Jae-Woo Lee ,  Jae-Hyun Kim

发明人： Dong-Woo HAN ,  Jeong-Sik Kim ,  Min-Ja Yoo ,  Jae-Woo Lee ,  Jae-Hyun Kim

IPC分类号： G03C1/38 ,  G03F7/20 ,  C07C69/75 ,  C07C69/74 ,  C07J9/00 ,  C07D401/14

CPC分类号： C07C69/74 ,  C07C69/00 ,  C07C69/75 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/74 ,  C07D207/12 ,  C07D209/32 ,  C07D211/40 ,  G03F7/0392 ,  G03F7/0397

摘要： In the formation of a fine pattern using a photolithography process, a dissolution promoter which can increase the difference of solubility between exposed region and unexposed region, and a photoresist composition including the same are disclosed. The dissolution promoter has the structure of the following formula (wherein, R is a hydrocarbon group of 1 to 40 carbon atoms, A is an alkyl group of 1 to 10 carbon atoms, p is 0 or 1, and q is an integer of 1 to 20). Moreover, the photoresist composition comprises 3 to 30 wt % (weight %) of the photosensitive compound; 1 to 30 weight parts of a dissolution promoter represented by the formula, with respect to 100 weight parts of the photosensitive compound; 0.05 to weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and a remaining organic solvent.

摘要翻译： 在使用光刻工艺形成精细图案时，公开了可以增加曝光区域和未曝光区域之间的溶解度差的溶解促进剂，以及包含其的光刻胶组合物。 溶解促进剂具有下式的结构（其中，R为碳原子数为1〜40的烃基，A为碳原子数为1〜10的烷基，p为0或1，q为1的整数） 到20）。 此外，光致抗蚀剂组合物含有3〜30重量％（重量）感光性化合物; 1〜30重量份由式表示的溶解促进剂，相对于100重量份的感光性化合物; 相对于100重量份感光性化合物的光酸产生剂为0.05〜 和剩余的有机溶剂。

公开(公告)号：US20150303194A1

公开(公告)日：2015-10-22

申请号：US14693017

申请日：2015-04-22

申请人： BOK-YOUNG LEE ,  JEONG-YUN LEE ,  DONG-HYUN KIM ,  MYEONG-CHEOL KIM ,  DONG-WOO HAN

发明人： BOK-YOUNG LEE ,  JEONG-YUN LEE ,  DONG-HYUN KIM ,  MYEONG-CHEOL KIM ,  DONG-WOO HAN

IPC分类号： H01L27/088 ,  H01L29/423

CPC分类号： H01L21/823821 ,  H01L21/30604 ,  H01L21/823828 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6656 ,  H01L29/66795

摘要： Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件包括从衬底突出并沿第一方向延伸的第一有源鳍片和第二有源鳍片，第一栅极结构，其在第一有源鳍片上沿着与第一方向相交的第二方向延伸;第二栅极 结构，其位于第二方向上与第一栅极结构相邻并且在第二有源鳍上沿着第二方向延伸;以及虚设结构，其位于第一栅极结构和第二栅极结构之间的空间中。

公开(公告)号：US20160315018A1

公开(公告)日：2016-10-27

申请号：US15167050

申请日：2016-05-27

申请人： Bok-Young LEE ,  Jeong-Yun LEE ,  Dong-Hyun KIM ,  Myeong-Cheol KIM ,  Dong-Woo HAN

发明人： Bok-Young LEE ,  Jeong-Yun LEE ,  Dong-Hyun KIM ,  Myeong-Cheol KIM ,  Dong-Woo HAN

IPC分类号： H01L21/8238 ,  H01L21/306 ,  H01L29/66

CPC分类号： H01L21/823821 ,  H01L21/30604 ,  H01L21/823828 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6656 ,  H01L29/66795

摘要： Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件包括从衬底突出并沿第一方向延伸的第一有源鳍片和第二有源鳍片，第一栅极结构，其在第一有源鳍片上沿着与第一方向相交的第二方向延伸;第二栅极 结构，其位于第二方向上与第一栅极结构相邻并且在第二有源鳍上沿着第二方向延伸;以及虚设结构，其位于第一栅极结构和第二栅极结构之间的空间中。

公开(公告)号：US09379107B2

公开(公告)日：2016-06-28

申请号：US14693017

申请日：2015-04-22

申请人： Bok-Young Lee ,  Jeong-Yun Lee ,  Dong-Hyun Kim ,  Myeong-Cheol Kim ,  Dong-Woo Han

发明人： Bok-Young Lee ,  Jeong-Yun Lee ,  Dong-Hyun Kim ,  Myeong-Cheol Kim ,  Dong-Woo Han

IPC分类号： H01L29/76 ,  H01L27/088 ,  H01L27/02

CPC分类号： H01L21/823821 ,  H01L21/30604 ,  H01L21/823828 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6656 ,  H01L29/66795

摘要： Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件包括从衬底突出并沿第一方向延伸的第一有源鳍片和第二有源鳍片，第一栅极结构，其在第一有源鳍片上沿着与第一方向相交的第二方向延伸;第二栅极 结构，其位于第二方向上与第一栅极结构相邻并且在第二有源鳍上沿着第二方向延伸;以及虚设结构，其位于第一栅极结构和第二栅极结构之间的空间中。