公开(公告)号：US20150333059A1

公开(公告)日：2015-11-19

申请号：US14642069

申请日：2015-03-09

申请人： Dongbok Lee ,  KiVin Im ,  Youngsoo Lim ,  SoonMok Ha ,  Sung-Wook Hwang ,  Mansug Kang ,  Inseak Hwang

发明人： Dongbok Lee ,  KiVin Im ,  Youngsoo Lim ,  SoonMok Ha ,  Sung-Wook Hwang ,  Mansug Kang ,  Inseak Hwang

IPC分类号： H01L27/088 ,  H01L27/105

CPC分类号： H01L27/10891 ,  H01L27/088 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10876

摘要： A semiconductor memory device includes a substrate having active regions extending in a first direction and separated therealong by a device isolation layer, and conductive word lines extending on the substrate in a second direction intersecting the first direction. Ones of the word lines extending between the active regions define isolation gate lines, which are insulated from the active regions by the device isolation layer. Edges of the active regions adjacent the isolation gate lines respectively include first and second corners that are spaced apart from an adjacent one of the isolation gate lines by substantially equal distances. Related fabrication methods are also discussed.

摘要翻译： 半导体存储器件包括具有在第一方向上延伸并且由器件隔离层分离的有源区的衬底，以及在与第一方向相交的第二方向上在衬底上延伸的导电字线。 在有源区域之间延伸的字线的一部分限定了通过器件隔离层与有源区域绝缘的隔离栅极线。 邻近隔离栅极线的有源区的边缘分别包括通过基本上相等的距离与相邻隔离栅极线间隔开的第一和第二拐角。 还讨论了相关的制造方法。