公开(公告)号：US20150333059A1

公开(公告)日：2015-11-19

申请号：US14642069

申请日：2015-03-09

Applicant: Dongbok Lee ,  KiVin Im ,  Youngsoo Lim ,  SoonMok Ha ,  Sung-Wook Hwang ,  Mansug Kang ,  Inseak Hwang

Inventor： Dongbok Lee ,  KiVin Im ,  Youngsoo Lim ,  SoonMok Ha ,  Sung-Wook Hwang ,  Mansug Kang ,  Inseak Hwang

IPC: H01L27/088 ,  H01L27/105

CPC classification number: H01L27/10891 ,  H01L27/088 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10876

Abstract: A semiconductor memory device includes a substrate having active regions extending in a first direction and separated therealong by a device isolation layer, and conductive word lines extending on the substrate in a second direction intersecting the first direction. Ones of the word lines extending between the active regions define isolation gate lines, which are insulated from the active regions by the device isolation layer. Edges of the active regions adjacent the isolation gate lines respectively include first and second corners that are spaced apart from an adjacent one of the isolation gate lines by substantially equal distances. Related fabrication methods are also discussed.

Abstract translation: 半导体存储器件包括具有在第一方向上延伸并且由器件隔离层分离的有源区的衬底，以及在与第一方向相交的第二方向上在衬底上延伸的导电字线。 在有源区域之间延伸的字线的一部分限定了通过器件隔离层与有源区域绝缘的隔离栅极线。 邻近隔离栅极线的有源区的边缘分别包括通过基本上相等的距离与相邻隔离栅极线间隔开的第一和第二拐角。 还讨论了相关的制造方法。

公开(公告)号：US20120100687A1

公开(公告)日：2012-04-26

申请号：US13274695

申请日：2011-10-17

Applicant: Hanjin Lim ,  Jong-Bom Seo ,  Seokwoo Nam ,  Bonghyun Kim ,  Yongjae Lee ,  KiVin Im

Inventor： Hanjin Lim ,  Jong-Bom Seo ,  Seokwoo Nam ,  Bonghyun Kim ,  Yongjae Lee ,  KiVin Im

IPC: H01L21/02

CPC classification number: H01L28/90 ,  H01L27/10814 ,  H01L27/10855

Abstract: Example embodiments relate to methods for fabricating a capacitor and methods for fabricating a semiconductor device including the capacitor. The methods for fabricating a capacitor may include forming a preliminary lower electrode with a first area on a substrate; implanting ions in the preliminary lower electrode to form a lower electrode with a second area that is larger or substantially larger than the first area; and forming a dielectric layer and an upper electrode on the lower electrode.

Abstract translation: 示例性实施例涉及用于制造电容器的方法和用于制造包括该电容器的半导体器件的方法。 制造电容器的方法可以包括在基板上形成具有第一区域的预备下电极; 在所述预备下电极中注入离子以形成具有比所述第一区域更大或显着大的第二区域的下电极; 并在下电极上形成电介质层和上电极。