公开(公告)号：US6156164A

公开(公告)日：2000-12-05

申请号：US337574

申请日：1999-06-22

申请人： Jason Smolanoff ,  Doug Caldwell ,  Glyn Reynolds

发明人： Jason Smolanoff ,  Doug Caldwell ,  Glyn Reynolds

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： C23C14/54 ,  C23C14/35

摘要： Damage to a gallium arsenide substrate during plasma ignition for PVD processing is avoided by a virtual shutter, which provides the functions without the disadvantages of a mechanical shutter to minimize the density of high energy particles created during plasma ignition from reaching the GaAs substrate. A plasma ignition process sequence uses a high pressure gas ignition gas burst in combination with the control of other parameters, such as (a) varying the plasma ignition gas composition to include xenon, krypton or fluorinated molecular gases, (b) varying target-to-substrate distance to at least double the distance during plasma ignition, (c) increasing the magnetron magnetic field strength either permanently or during plasma ignition to about 400 Gauss, (d) preconditioning the target by sputtering whenever the system has been idle for several minutes, (e) adjusting the power supply power ramping to the target over 5-6 seconds or more, and/or (f) using a simple electric circuit to drain charge build up on the GaAs substrate.

摘要翻译： 通过虚拟快门避免了用于PVD处理的等离子体点火期间对砷化镓衬底的损害，虚拟快门提供了功能，而没有机械快门的缺点，以使得在到达GaAs衬底期间等离子体点火期间产生的高能量粒子的密度最小化。 等离子体点火过程顺序使用高压气体点火气体爆裂与其他参数的控制相结合，例如（a）改变等离子体点火气体组成以包括氙，氪或氟化分子气体，（b）将目标 - - 等离子体点火期间距离至少为两倍的衬底距离，（c）永久地或等离子体点火期间将磁控管磁场强度提高到约400高斯，（d）当系统空闲几分钟时，通过溅射预处理靶 （e）调整在5-6秒或更长时间内向目标斜坡上升的电源功率，和/或（f）使用简单的电路来在GaAs衬底上排出电荷。

公开(公告)号：US6117279A

公开(公告)日：2000-09-12

申请号：US190515

申请日：1998-11-12

申请人： Jason Smolanoff ,  Doug Caldwell ,  Jim Zibrida ,  Bruce Gittleman ,  Thomas J. Licata

发明人： Jason Smolanoff ,  Doug Caldwell ,  Jim Zibrida ,  Bruce Gittleman ,  Thomas J. Licata

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  D06F29/00

CPC分类号： H01J37/32477 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3405

摘要： An ionized physical vapor deposition method and apparatus are provided which employs a magnetron magnetic field produced by cathode magnet structure behind a sputtering target to produce a main sputtering plasma, and an RF inductively coupled field produced by an RF coil outside of and surrounding the vacuum of the chamber to produce a secondary plasma in the chamber between the target and a substrate to ionize sputtered material passing from the target to the substrate so that the sputtered material can be electrically or magnetically steered to arrive at the substrate at right angles. A circumferentially interrupted shield or shield structure in the chamber protects the window from material deposits. A low pass LC filter circuit allows the shield to float relative to the RF voltage but to dissipate DC potential on the shield. Advantages provided are that loss of electrons and ions from the secondary plasma is prevented, preserving plasma density and providing high ionization fraction of the sputtered material arriving at the substrate.

摘要翻译： 提供一种电离物理气相沉积方法和装置，其采用由溅射靶之后的阴极磁体结构产生的磁控管磁场，以产生主溅射等离子体，以及由RF线圈产生的RF电感耦合场， 所述腔室在靶和衬底之间的腔室中产生二次等离子体，以将从目标通过的溅射材料离子化到衬底，使得溅射材料可以被电或磁力转向，以直角到达衬底。 室中的周向中断的屏蔽或屏蔽结构保护窗户免受材料沉积。 低通LC滤波器电路允许屏蔽相对于RF电压浮动，但是消散屏蔽上的DC电位。 所提供的优点是防止来自次级等离子体的电子和离子的损失，保持等离子体密度并提供到达衬底的溅射材料的高离子化分数。

公开(公告)号：US06645344B2

公开(公告)日：2003-11-11

申请号：US09861322

申请日：2001-05-18

申请人： Doug Caldwell ,  Albert Garcia, Jr. ,  Thomas J. Horback ,  Michael James Lombardi ,  Mark McNicholas ,  Dean Mize ,  Gon Wang

发明人： Doug Caldwell ,  Albert Garcia, Jr. ,  Thomas J. Horback ,  Michael James Lombardi ,  Mark McNicholas ,  Dean Mize ,  Gon Wang

IPC分类号： H01L2100

CPC分类号： H01L21/68757 ,  H01L21/68785

摘要： A backplane assembly for a substrate processing system that is selectively configurable to provide an effective thermal contact with substrates of differing sizes. The backplane assembly includes a backplane base installed in a vacuum chamber of the substrate processing system and plural faceplates which are removably mountable to the backplane base. The backplane assembly is operable for regulating the temperature of the substrate and include elements that promote the efficient transfer of heat between the backplane base and the faceplate to perform the temperature regulation during processing. Each of the faceplates has a contact surface dimensioned and configured to engage a correspondingly dimensioned and/or configured type of substrate. The faceplates are readily demountable from the backplane base for exchange to accommodate a change in the dimension and/or configuration of the substrates being processed by the substrate processing system without removing the backplane base from the vacuum chamber.