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14 条记录 (耗时 0.028 秒)

    Method of fabricating a current controlled bistable electrical organic thin film switching device
    2.
    发明授权
    Method of fabricating a current controlled bistable electrical organic thin film switching device 失效
    制造电流控制双稳电气有机薄膜开关器件的方法

    公开(公告)号：US4507672A

    公开(公告)日：1985-03-26

    申请号：US385523

    申请日：1982-06-07

    申请人： Richard S. Potember ,  Theodore O. Poehler ,  Dwaine O. Cowan

    发明人： Richard S. Potember ,  Theodore O. Poehler ,  Dwaine O. Cowan

    IPC分类号： G11C13/02 ,  H01L45/00 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L29/28

    CPC分类号： H01L51/05 ,  B82Y10/00 ,  G11C13/0014 ,  H01L51/0051

    摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.Various other modifications, adaptations and alterations are of course possible in light of the above teachings. Therefore, it should be understood at this time that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.

    摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他这样的电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合的延迟和切换时间为1纳秒级。 本发明的复合物的开关行为与受体分子的还原电位有关。 根据上述教导，当然可以进行各种其它修改，改编和改变。 因此，此时应当理解，在所附权利要求的范围内，本发明可以以不同于具体描述的方式实施。

    Multistate optical switching and memory using an amphoteric organic charge transfer material
    6.
    发明授权
    Multistate optical switching and memory using an amphoteric organic charge transfer material 失效
    使用两性有机电荷转移材料的多光学光学开关和存储器

    公开(公告)号：US4663270A

    公开(公告)日：1987-05-05

    申请号：US603717

    申请日：1984-04-25

    申请人： Richard S. Potember ,  Theodore O. Poehler

    发明人： Richard S. Potember ,  Theodore O. Poehler

    IPC分类号： B41M5/26 ,  G03C1/73 ,  G03C5/00 ,  G03C5/56 ,  G11B7/00 ,  G11B7/004 ,  G11B7/24 ,  G11B7/244 ,  G11C11/56 ,  G11C13/02 ,  G11C13/04 ,  G03C1/00 ,  G03C3/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G03C1/73 ,  G11B7/244 ,  G11C11/5664 ,  G11C13/04 ,  Y10S430/10

    摘要： A multistate organic optical storage medium is disclosed, wherein an optical beam can switch any "data storage spot" on said optical storage medium into three or more memory states. The optical storage medium may consist of a mixture of bistate switching modules, or it may consist of large delocalized amphoteric molecules. The illuminated area of said optical storage medium will undergo an electrochemical topactic redox reaction which will cause certain moieties in the illuminated area to change oxidation state. By changing the intensity of the optical "write" beam the illuminated area can be switched to a plurality of specific states each state having a unique set of oxidation species. An optical/spectroscopic means is used to identify the presence of oxidation species and to "read" the data stored.

    摘要翻译： 公开了一种多状态有机光学存储介质，其中光束可以将所述光学存储介质上的任何“数据存储点”切换成三个或更多个存储器状态。 光学存储介质可以由双稳态切换模块的混合物组成，或者它可以由大的离域两性分子组成。 所述光学存储介质的照明区域将经历电化学顶部氧化还原反应，这将引起照明区域中的某些部分改变氧化态。 通过改变光学“写入”光束的强度，照明区域可以切换到多个特定状态，每个状态具有独特的一组氧化物质。 使用光学/光谱手段来识别氧化物质的存在并“读取”存储的数据。

    Optical storage and switching devices using organic charge transfer salts
    7.
    发明授权
    Optical storage and switching devices using organic charge transfer salts 失效
    光存储和开关器件采用有机电荷转移盐

    公开(公告)号：US4731756A

    公开(公告)日：1988-03-15

    申请号：US770443

    申请日：1985-08-29

    申请人： Richard S. Potember ,  Theodore O. Poehler ,  Richard C. Benson

    发明人： Richard S. Potember ,  Theodore O. Poehler ,  Richard C. Benson

    IPC分类号： G03C1/73 ,  G11C13/02 ,  G11C13/04 ,  H03K3/40 ,  H03K17/78 ,  G11C11/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G03C1/73 ,  G11C13/047 ,  H03K17/78 ,  H03K3/40 ,  G11C13/04

    摘要： Optical devices using an organic charge transfer salt as the switching and storage media are disclosed. Generally, a light beam of a given intensity directed to a film of certain organic charge transfer salts causes the illuminated area to change from a first to a second state. This electrochemical process is reversible with heat energy transforming the illuminated area back into the first state. The first and second states have identifiably different optical and electrical properties. The organic charge transfer salt is used to fabricate an erasable or permanent optical memory and a threshold on bistable optoelectronic switch.

    摘要翻译： 公开了使用有机电荷转移盐作为开关和存储介质的光学器件。 通常，指向某些有机电荷转移盐的膜的给定强度的光束导致照明区域从第一状态变为第二状态。 该电化学过程是可逆的，热能将照明区域转换回第一状态。 第一和第二状态具有可识别的不同的光学和电气特性。 有机电荷转移盐用于制造可擦除或永久的光学存储器和双稳态光电开关的阈值。

    Electron density storage device and method using STM
    9.
    发明授权
    Electron density storage device and method using STM 失效
    电子密度存储器件及使用STM的方法

    公开(公告)号：US5161149A

    公开(公告)日：1992-11-03

    申请号：US733770

    申请日：1991-07-22

    申请人： Richard S. Potember ,  Shoji Yamaguchi ,  Carla A. Viands

    发明人： Richard S. Potember ,  Shoji Yamaguchi ,  Carla A. Viands

    IPC分类号： H01J37/28 ,  G01Q30/00 ,  G11B9/00 ,  G11B9/14 ,  G11C13/02 ,  H01L51/05 ,  H01L51/30

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/149 ,  Y10S430/143 ,  Y10S977/947

    摘要： The invention is a method and device providing very high density information storage on an organometallic charge transfer data storage medium. The medium is switched from one state to another through the application of an electric field to the medium by the probe tip of a scanning tunneling microscope resulting in an observable change in the electron density of the surface of the medium. A STM tip is used to write, read and erase data via the organometallic charge transfer medium (e.g. TCNQ, or derivatives thereof).

    摘要翻译： 本发明是在有机金属电荷转移数据存储介质上提供非常高密度信息存储的方法和装置。 介质通过扫描隧道显微镜的探针尖端通过向介质施加电场而从一个状态切换到另一个状态，导致介质表面的电子密度的可观察到的变化。 STM尖端用于通过有机金属电荷转移介质（例如TCNQ或其衍生物）写入，读取和擦除数据。