公开(公告)号：US4626703A

公开(公告)日：1986-12-02

申请号：US501112

申请日：1983-06-06

申请人： Hubert Patalong ,  Eberhard Spenke

发明人： Hubert Patalong ,  Eberhard Spenke

IPC分类号： H01L29/74 ,  H01L29/744 ,  H03K17/72

CPC分类号： H01L29/744

摘要： A thyristor has a semiconductor body exhibiting an n-p-n-p layer sequence with the small n-emitter and the p-emitter being contacted by first and second electrodes. The p-base layer has a third electrode connected to the first electrode through a first current source connectible with a first polarity. For triggering or quenching the thyristor as quickly and efficiently as possible, the n-base layer has a fourth electrode connected to the second electrode through a second connectible current source, the second current source being connectible to the fourth electrode with a second polarity opposite the first polarity.

摘要翻译： 晶闸管具有呈现n-p-n-p层序列的半导体本体，小n型发射极和p型发射极与第一和第二电极接触。 p基层具有通过可连接到第一极性的第一电流源连接到第一电极的第三电极。 为了尽可能快速且有效地触发或淬火晶闸管，n基层具有通过第二可连接电流源连接到第二电极的第四电极，第二电流源可连接到具有与第二电极相对的第二极性的第四电极 第一极性。

公开(公告)号：US4884114A

公开(公告)日：1989-11-28

申请号：US515175

申请日：1983-07-19

申请人： Eberhard Spenke ,  Michael Stoisiek

发明人： Eberhard Spenke ,  Michael Stoisiek

IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L29/749 ,  H03K17/732

CPC分类号： H03K17/732

摘要： A thyristor has a semiconductor member with a pnpn-layer sequence, a plurality of n(p)-emitter parts, and switching transistors arranged at the edges of the n(p)-emitter parts. The switching transistors respectively include a p(n) semiconductor zone inserted in one of the n(p)-emitter parts, a partial zone of the p(n)-base, and an intermediately disposed channel zone covered by an insulated gate. Rapid and effective reduction of the electron-hole plasma flooding the p-base and n-base during quenching of the thyristor is achieved by a current source connected between electrodes for the p(n) semiconductor zones and a cathode (anode) feed line, the current source delivering an extraction current pulse.

摘要翻译： 晶闸管具有具有pnpn层序列的半导体部件，多个n（p） - 发射器部件和布置在n（p）发射器部分的边缘处的开关晶体管。 开关晶体管分别包括插入n（p） - 发射器部分之一的p（n）半导体区域，p（n） - 基极的部分区域和由绝缘栅极覆盖的中间设置的沟道区域。 通过连接在用于p（n）半导体区的电极和阴极（阳极）馈电线之间的电流源来实现在晶闸管猝灭期间快速有效地减少p基极和n-碱基的电子 - 空穴等离子体淹没， 电流源提供提取电流脉冲。

公开(公告)号：US4737834A

公开(公告)日：1988-04-12

申请号：US935096

申请日：1986-12-24

申请人： Eberhard Spenke ,  Hubert Patalong

发明人： Eberhard Spenke ,  Hubert Patalong

IPC分类号： H01L29/06 ,  H01L29/74 ,  H01L29/744 ,  H01L29/745 ,  H01L29/747 ,  H01L29/749

CPC分类号： H01L29/747 ,  H01L29/0692 ,  H01L29/742 ,  H01L29/7428 ,  H01L29/7455

摘要： A thyristor has a plurality of gate-controlled MIS-FET structures which serve the purpose of controlling emitter short-circuit paths with the objective of achieving stabilization short-circuits and, if necessary, quenching short-circuits. MIS-FET structures are disclosed which are effective, yet make economical use of surface area. In accordance with the invention, this is achieved since structures are provided at a plurality of recesses of the layered n-type emitter such that the electrode contacting the n-type emitter has recesses permitting it to contact the MIS-FET structures only on a border side.

摘要翻译： 晶闸管具有多个栅极控制的MIS-FET结构，其用于控制​​发射极短路路径的目的是实现稳定化短路，并且如果需要，淬火短路。 公开了有效的MIS-FET结构，但是经济地使用表面积。 根据本发明，这是由于在层状n型发射体的多个凹部处设置结构，使得与n型发射体接触的电极具有允许其仅在边界上接触MIS-FET结构的凹部 侧。

公开(公告)号：US4027051A

公开(公告)日：1977-05-31

申请号：US530347

申请日：1974-12-06

申请人： Konrad Reuschel ,  Manfred Schnoeller ,  Alfred Muehlbauer ,  Eberhard Spenke ,  Wolfgang Keller

发明人： Konrad Reuschel ,  Manfred Schnoeller ,  Alfred Muehlbauer ,  Eberhard Spenke ,  Wolfgang Keller

IPC分类号： C30B31/20 ,  G21G1/06 ,  H01L21/261 ,  B05D3/06

CPC分类号： C30B31/20 ,  H01L21/261 ,  Y10S148/165

摘要： Homogeneously doped Si monocrystals of the n-type are produced from p- or n-type Si crystals having a random dopant concentration in radial and axial directions of the crystal and the dopant concentration within such crystals is adjusted by subjecting such crystals to controlled thermal neutron radiation.

摘要翻译： n型的均匀掺杂的Si单晶由在晶体的径向和轴向方向上具有随机掺杂剂浓度的p型或n型Si晶体产生，并且通过使这种晶体受控于热中子来调节这种晶体内的掺杂剂浓度 辐射。