公开(公告)号：US06906421B1

公开(公告)日：2005-06-14

申请号：US09006958

申请日：1998-01-14

申请人： Ende Shan ,  Gorley Lau ,  Anthony Chung

发明人： Ende Shan ,  Gorley Lau ,  Anthony Chung

IPC分类号： H01L23/31 ,  H01L23/48 ,  H01L23/52 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L23/53266 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention relates to a method of forming a local interconnect and a semiconductor device comprising a local interconnect. The semiconductor device comprises: a) a dielectric outside layer; and b) a conductivity structure comprising: i) at least one barrier layer having a thickness of 10-200 Å on a surface of said oxide layer; and ii) a conductive layer comprising titanium, on said at least one barrier layer, said at least one barrier layer preventing diffusion of oxygen from said dielectric oxide layer into said conductive layer and having a corresponding oxide that is not soluble in said conductive layer.

摘要翻译： 本发明涉及形成局部互连的方法和包括局部互连的半导体器件。 所述半导体器件包括：a）电介质外层; 以及b）导电结构，其包括：i）在所述氧化物层的表面上具有10-200厚度的至少一个阻挡层; 以及ii）包含钛的导电层，在所述至少一个阻挡层上，所述至少一个阻挡层防止氧从所述电介质氧化物层扩散到所述导电层中并具有不溶于所述导电层的相应氧化物。

公开(公告)号：US06746950B2

公开(公告)日：2004-06-08

申请号：US09992743

申请日：2001-11-14

申请人： Ende Shan

发明人： Ende Shan

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76871 ,  H01L21/76877

摘要： A low temperature aluminum planarization process. Vias, including high aspect ratio vias, are filled using a liner layer, a seed layer, and a fill layer. The device associated with the via is exposed to a reactive gas prior to applying the fill layer to the device.

摘要翻译： 低温铝平面化工艺。 包括高纵横比通孔的通孔使用衬里层，种子层和填充层填充。 在将填充层施加到装置之前，与通孔相关联的装置暴露于反应气体。

公开(公告)号：US06534398B2

公开(公告)日：2003-03-18

申请号：US09759925

申请日：2001-01-12

申请人： Ende Shan ,  Gorley Lau ,  Sam G. Geha

发明人： Ende Shan ,  Gorley Lau ,  Sam G. Geha

IPC分类号： H01L214763

CPC分类号： H01L21/7685 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/76838

摘要： A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

摘要翻译： 在基板上形成金属层的方法包括以下步骤：在基板上形成包括第一金属的第一层; 将第一层冷却足以抑制金属间相形成的时间; 以及在所述第一层上形成包含与所述第一金属不同的第二金属的第二层。 冷却步骤通过抑制两个金属层之间的金属间相层的形成以及通过抑制在第一层中可能在相对反应的晶界处形成的“凸起”或其它表面不规则性来减小所得堆叠结构的粗糙度。

公开(公告)号：US06187667B1

公开(公告)日：2001-02-13

申请号：US09099655

申请日：1998-06-17

申请人： Ende Shan ,  Gorley Lau ,  Sam G. Geha

发明人： Ende Shan ,  Gorley Lau ,  Sam G. Geha

IPC分类号： H01L21477

CPC分类号： H01L21/7685 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/76838

摘要： A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

公开(公告)号：US06756302B1

公开(公告)日：2004-06-29

申请号：US09688817

申请日：2000-10-17

申请人： Ende Shan ,  Gorley Lau ,  Sam Geha

发明人： Ende Shan ,  Gorley Lau ,  Sam Geha

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76876 ,  H01L21/76882

摘要： The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.

摘要翻译： 本发明涉及在衬底上形成金属层并以高生产量填充通孔的方法。 可以依次使用冷沉积步骤，慢速热沉积步骤和快速热沉积步骤，在衬底上形成金属层。 冷沉积步骤仅需要进行一段足以在其上形成金属层的整个表面上沉积金属种子层的时间。 在慢热沉积步骤中，以能够沉积金属的表面扩散的功率沉积另外的金属，然后在体积扩散条件下快速热沉积金属。

公开(公告)号：US6156645A

公开(公告)日：2000-12-05

申请号：US740290

申请日：1996-10-25

申请人： Sam G. Geha ,  Ende Shan

发明人： Sam G. Geha ,  Ende Shan

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76877

摘要： A wetting layer is formed on a substrate at a relatively high process temperature (e.g., the temperature of the substrate and/or the temperature within a process chamber in which the wetting layer is formed). A metallization layer that is subsequently formed on the wetting layer adheres to the wetting layer better than the metallization layer would adhere to the wetting layer if the wetting layer was formed at a lower process temperature. The high process temperature causes the density of the wetting layer to be increased, so that, consequently, the wetting layer has a smoother surface to which the metallization layer can adhere.

摘要翻译： 在相对高的工艺温度（例如衬底的温度和/或其中形成润湿层的处理室内的温度）下在衬底上形成润湿层。 随后在润湿层上形成的金属化层比金属化层更好地附着在润湿层上，如果润湿层在较低的工艺温度下形成，则其将粘附到润湿层上。 高的工艺温度导致润湿层的密度增加，因此，润湿层具有可以粘附金属化层的更光滑的表面。

公开(公告)号：US6140228A

公开(公告)日：2000-10-31

申请号：US970107

申请日：1997-11-13

申请人： Ende Shan ,  Gorley Lau ,  Sam Geha

发明人： Ende Shan ,  Gorley Lau ,  Sam Geha

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76876 ,  H01L21/76882

摘要： The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a low power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.

摘要翻译： 本发明涉及在衬底上形成金属层并以高生产量填充通孔的方法。 可以依次使用冷沉积步骤，慢速热沉积步骤和快速热沉积步骤，在衬底上形成金属层。 冷沉积步骤仅需要进行一段足以在其上形成金属层的整个表面上沉积金属种子层的时间。 在慢热沉积步骤中，以低功率沉积另外的金属，允许沉积的金属的表面扩散，然后在体扩散条件下快速热沉积金属。

公开(公告)号：US5968851A

公开(公告)日：1999-10-19

申请号：US820893

申请日：1997-03-19

申请人： Sam Geha ,  Ende Shan

发明人： Sam Geha ,  Ende Shan

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31111 ,  Y10S438/974

摘要： The present invention relates to a method of manufacturing an opening through a dielectric layer. The method comprises treating a polished dielectric layer with a wet etch selectively enchancing composition, such as buffered HF, prior to the formation of a patterned photoresist to improve the lateral-to-vertical wet etch ratio.

摘要翻译： 本发明涉及通过电介质层制造开口的方法。 该方法包括在形成图案化的光致抗蚀剂之前用湿蚀刻选择性增强组合物（例如缓冲HF）处理抛光的介电层，以改善横向到垂直的湿蚀刻比。