公开(公告)号：US20180040663A1

公开(公告)日：2018-02-08

申请号：US15602572

申请日：2017-05-23

申请人： Joseph P. Donnelly ,  K. Alexander McIntosh ,  Erik K. Duerr ,  William D. Goodhue ,  Robert J. Bailey ,  Lisa A. Wright

发明人： Joseph P. Donnelly ,  K. Alexander McIntosh ,  Erik K. Duerr ,  William D. Goodhue ,  Robert J. Bailey ,  Lisa A. Wright

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L27/118 ,  H01L31/107

CPC分类号： H01L27/14689 ,  G01J2001/4466 ,  H01L27/11807 ,  H01L27/14643 ,  H01L31/03529 ,  H01L31/107 ,  H01L2027/11892

摘要： There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.

公开(公告)号：US10109671B2

公开(公告)日：2018-10-23

申请号：US15602572

申请日：2017-05-23

申请人： Joseph P Donnelly ,  K Alexander McIntosh ,  Erik K Duerr ,  William D Goodhue ,  Robert J Bailey ,  Lisa A Wright

发明人： Joseph P Donnelly ,  K Alexander McIntosh ,  Erik K Duerr ,  William D Goodhue ,  Robert J Bailey ,  Lisa A Wright

IPC分类号： H01L27/146 ,  H01L31/107 ,  H01L27/118 ,  H01L31/0352 ,  G01J1/44

摘要： There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.

公开(公告)号：US20110169117A1

公开(公告)日：2011-07-14

申请号：US12771155

申请日：2010-04-30

申请人： K. Alexander McIntosh ,  David C. Chapman ,  Joseph P. Donnelly ,  Douglas C. Oakley ,  Antonio Napoleone ,  Erik K. Duerr ,  Simon Verghese ,  Richard D. Younger

发明人： K. Alexander McIntosh ,  David C. Chapman ,  Joseph P. Donnelly ,  Douglas C. Oakley ,  Antonio Napoleone ,  Erik K. Duerr ,  Simon Verghese ,  Richard D. Younger

IPC分类号： H01L31/107 ,  H01L31/0232

CPC分类号： H01L31/107 ,  H01L25/167 ,  H01L27/1446 ,  H01L31/02005 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/0352 ,  H01L2924/0002 ,  H01L2924/00

摘要： An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.

摘要翻译： 雪崩光电二极管检测器设置有包括雪崩光电二极管阵列的衬底。 布置基板的光学界面以接收外部输入辐射。 提供了至少一个材料的串扰阻挡层，其包括定位成允许外部输入辐射到达光电二极管并且包括定位的衰减由阵列中的光电二极管产生的衬底中的辐射的材料区域的孔。 或者，材料的至少一个串扰阻挡层设置在衬底的光学接口表面上，以允许外部输入辐射到达光电二极管并且衰减由阵列中的光电二极管产生的衬底中的辐射。 至少一个材料的串扰滤波器层可以设置在与光电二极管结构相邻的衬底中，包括吸收由阵列中的光电二极管产生的衬底中的辐射的材料。