公开(公告)号：US20070148978A1

公开(公告)日：2007-06-28

申请号：US11642582

申请日：2006-12-21

Applicant: Eui-Jin Han ,  Nam-Soo Kim ,  Kyoung-Moon Kang ,  Dong-Jun Lee ,  Hyo-Sun Lee

Inventor： Eui-Jin Han ,  Nam-Soo Kim ,  Kyoung-Moon Kang ,  Dong-Jun Lee ,  Hyo-Sun Lee

IPC: C09K13/00 ,  C03C15/00 ,  C23F1/00 ,  B44C1/22

CPC classification number: C09K3/1454 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212

Abstract: A slurry composition, a method of polishing polysilicon layers using the slurry composition, and a method of manufacturing a semiconductor device using the same, wherein the slurry composition includes an abrasive in an amount of about 1 to about 20 percent by weight of the slurry composition, a non-ionic surfactant in an amount of about 0.005 to about 1 percent by weight of the slurry composition, and a solvent having a basic compound.

Abstract translation: 浆料组合物，使用该浆料组合物研磨多晶硅层的方法以及使用该浆料组合物制造半导体器件的方法，其中所述浆料组合物包含的量为所述浆料组合物的约1至约20重量％ ，约0.005至约1重量％的非离子表面活性剂，以及具有碱性化合物的溶剂。

公开(公告)号：US20070281486A1

公开(公告)日：2007-12-06

申请号：US11809672

申请日：2007-06-01

Applicant: Eui-Jin Han ,  Nam-Soo Kim ,  Bong-Su Ahn ,  Dong-Jun Lee

Inventor： Eui-Jin Han ,  Nam-Soo Kim ,  Bong-Su Ahn ,  Dong-Jun Lee

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/76819 ,  C09G1/02 ,  H01L21/31053 ,  H01L27/115 ,  H01L27/11521

Abstract: Methods of polishing an object layer and for manufacturing a non-volatile memory device that incorporates such a polished object layer using a specially formulated slurry composition are disclosed. The slurry compositions include a ceria abrasive, a nonionic surfactant having a hydrophilic-lipophilic balance (HLB) value in a range of about 12 to about 17, and water. The nonionic surfactant is selected such that it may be adsorbed onto a hydrophobic layer to protect the hydrophobic layer from the ceria abrasive during a polishing operation. The slurry compositions may have a relatively high polishing rate for a hydrophilic layer and at the same time a relatively low polishing rate for a hydrophobic layer. Thus, the slurry compositions may be applied during a process for polishing the hydrophilic layer using the hydrophobic layer as a polishing stop layer.

Abstract translation: 公开了抛光目标层和用于制造使用特别配制的浆料组合物并入这种抛光对象层的非易失性存储器件的方法。 浆料组合物包括二氧化铈磨料，亲水 - 亲油平衡（HLB）值在约12至约17的范围内的非离子表面活性剂和水。 选择非离子表面活性剂，使得其可以在抛光操作期间吸附到疏水层上以保护疏水层免受二氧化铈磨料的侵蚀。 该浆料组合物可以具有相对较高的抛光速率，对于亲水层，同时对疏水层具有较低的抛光速率。 因此，可以在使用疏水层作为抛光停止层的亲水层的抛光工艺期间施加浆料组合物。