Conditioner device for conditioning polishing pad and chemical mechanical polishing apparatus including the same
    2.
    发明授权
    Conditioner device for conditioning polishing pad and chemical mechanical polishing apparatus including the same 有权
    用于调理抛光垫的调节装置和包括其的化学机械抛光装置

    公开(公告)号:US07578727B2

    公开(公告)日:2009-08-25

    申请号:US11466425

    申请日:2006-08-22

    IPC分类号: B24B53/00

    CPC分类号: B24B53/017 B24B53/14

    摘要: The present invention relates to a conditioner device for polishing pad and a chemical mechanical polishing (CMP) apparatus having the same. The conditioner device of the present invention comprises a rotable support plate including a support plate surface comprising a center area located about the rotational axis of the support plate, a mid area surrounding the center area, and a peripheral area surrounding the mid area, a plurality of conditioning zones located within a portion of the mid area of the support plate surface. A plurality of hard particles which are densely arranged within the conditioning zones and are attached to the support plate surface. A plurality of passages defined by the conditioning zones within which a slurry flows, the passages occupying a portion of the mid area which is not occupied by the conditioning zones, the center area and the peripheral area.

    摘要翻译: 本发明涉及一种用于抛光垫的调节装置和具有该抛光垫的化学机械抛光(CMP)装置。 本发明的调节装置包括可旋转的支撑板,其包括支撑板表面,该支撑板表面包括围绕支撑板的旋转轴线的中心区域,围绕中心区域的中间区域和围绕中间区域的周边区域,多个 位于支撑板表面的中部区域的一部分内的调理区。 多个坚硬颗粒密集地布置在调理区内并附着在支撑板表面上。 由浆料流过的调节区限定的多个通道,通道占据中部区域的未被调节区域,中心区域和周边区域占据的部分。

    Polishing pad, method of manufacturing the polishing pad, and chemical mechanical polishing apparatus comprising the polishing pad
    6.
    发明申请
    Polishing pad, method of manufacturing the polishing pad, and chemical mechanical polishing apparatus comprising the polishing pad 审中-公开
    研磨垫,抛光垫的制造方法以及包含该抛光垫的化学机械抛光装置

    公开(公告)号:US20070037486A1

    公开(公告)日:2007-02-15

    申请号:US11500512

    申请日:2006-08-08

    IPC分类号: B24B51/00 B24B7/30 B24B29/00

    CPC分类号: B24B37/26 B24D7/14

    摘要: A polishing pad of a CMP apparatus has a plurality of pores. A characteristic associated with the pores, such as average size or pore density, varies substantially from region to region of the pad across the pad in a diametral direction of the pad. The polishing pad can be designed and manufactured using sample pads whose pore characteristics differ from each other. CMP test processes are performed in which the sample pads are used to polish test wafers, and the rates at which the test wafers are polished are measured and stored in a database. The polishing pad is fabricated using data from the database so that a chemical mechanical polishing apparatus employing the pad will polish wafers with a high degree of uniformity. The database can be used to select sample pads from a stockpile. Sections of the sample pads are cut out, respectively, and fastened to one another.

    摘要翻译: CMP设备的抛光垫具有多个孔。 与孔相关的特征,例如平均尺寸或孔密度,在焊盘的沿直径方向穿过焊盘的区域与区域之间显着变化。 可以使用其孔特性彼此不同的样品垫来设计和制造抛光垫。 进行CMP测试过程,其中使用样品垫来抛光测试晶片,并测量抛光测试晶片的速率并将其存储在数据库中。 使用来自数据库的数据制造抛光垫,使得使用该垫的化学机械抛光装置将以高度均匀度抛光晶片。 数据库可用于从库存中选择样品垫。 样品垫的切片分别切割并彼此紧固。