-
公开(公告)号：US20120094453A1
公开(公告)日：2012-04-19
申请号：US13273935
申请日：2011-10-14
申请人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
发明人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L27/11582 , H01L29/66666 , H01L29/7926
摘要： Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.
摘要翻译： 制造半导体器件的半导体器件和方法，其可以包括形成绝缘结构，所述绝缘结构包括彼此依次层叠并垂直分离的绝缘图案，以在绝缘图案之间提供间隙区域，形成填充间隙区域并覆盖两个相对的间隔区域的第一导电层 并且形成覆盖第一导电层的第二导电层。 覆盖绝缘结构的上侧壁的第二导电层的厚度大于覆盖绝缘结构的下侧壁的第二导电层的厚度。
-
2.发明授权Semiconductor devices having stacked structures and a layer formed thereon tapered in direction opposite of a tapering of the stacked structures and methods of fabricating the same 有权具有堆叠结构的半导体器件和形成在其上的层与层叠结构的锥形方向相反的方向形成，并且其制造方法公开(公告)号：US08679920B2
公开(公告)日：2014-03-25
申请号：US13273935
申请日：2011-10-14
申请人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
发明人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L27/11582 , H01L29/66666 , H01L29/7926
摘要： Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.
摘要翻译： 制造半导体器件的半导体器件和方法，其可以包括形成绝缘结构，所述绝缘结构包括彼此依次层叠并垂直分离的绝缘图案，以在绝缘图案之间提供间隙区域，形成填充间隙区域并覆盖两个相对的间隔区域的第一导电层 并且形成覆盖第一导电层的第二导电层。 覆盖绝缘结构的上侧壁的第二导电层的厚度大于覆盖绝缘结构的下侧壁的第二导电层的厚度。
-
搜索结果
2 条记录 (耗时 0.013 秒)
