摘要:
Electrical networks are formed to produce an approximation of at least one desired performance characteristic, based on the recognition that fabrication variations introduce slight differences in electronic sub-networks which were intended to be identical. These fabrication differences are turned to an advantage by providing a pool of sub-networks, and then selectively connecting particular combinations of these sub-networks to implement networks that approximate the desired performance characteristics. The sub-networks are of like kind (e.g., resistors) and have a like measure.
摘要:
A voltage source includes first and second pn junctions which conduct the outputs of respective current sources to establish respective base-emitter voltages Vbe1 and Vbe2 at respective nodes; Vbe1 and Vbe2 can each be generated with a current I or a current N*I. An amplifier A1 has its non-inverting input connected to the second node and its inverting input connected to the first node through an input capacitor; a feedback capacitor is connected between the inverting input and a third node. Switches are connected between A1's inverting input and A1's output, between the third node and A1's output, and between the third node and a circuit common point. A control circuit operates the switches and current sources during first and second operating phases to selectively produce a temperature independent output voltage or a temperature dependent output voltage.
摘要:
A comparison system compares a voltage which is proportional to absolute temperature S.sub.p to one which is equal to the sum of a conventional, uncorrected, bandgap cell voltage VBG and a proportional to absolute temperature voltage CT. The addition of CT to the uncorrected bandgap signal value yields a signal of the form Sp/(VBG+CT), which exhibits improved linearity over a signal of the form Sp/VBG, where VBG includes a Tln(T) term.
摘要:
A switched current temperature sensing circuit comprises a BJT arranged to conduct a forced emitter current IE of the form Ifixed+(Ifixed/β), such that the base current is given by Ifixed/β and the collector current is given by Ifixed+(Ifixed/β)−(Ifixed/β)=Ifixed. Base current Ifixed/β is mirrored to the emitter, and a current source provides current Ifixed, which is switched between at least a first value I and a second value N*I such that the BJT's base-emitter voltage has a first value Vbe1 when Ifixed=I and a second value Vbe2 when Ifixed=N*I, such that: ΔVbe12=Vbe1−Vbe2=(nFkT/q)(ln N), where nF is the BJT's emission coefficient, k is Boltzmann's constant, T is absolute temperature, and q is the electron charge.