公开(公告)号：US06467666B2

公开(公告)日：2002-10-22

申请号：US09870299

申请日：2001-05-30

申请人： Seiji Ichikawa ,  Tatsuo Tokue ,  Nobuo Nagano ,  Fumie Ogihara ,  Taku Sato

发明人： Seiji Ichikawa ,  Tatsuo Tokue ,  Nobuo Nagano ,  Fumie Ogihara ,  Taku Sato

IPC分类号： B65H2300

CPC分类号： H01L21/67092 ,  B28D5/0011 ,  H01L21/3043 ,  H01L21/78 ,  H05K1/0306 ,  H05K3/0052 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/1572 ,  H05K2203/302 ,  Y10T225/12 ,  Y10T225/325

摘要： A method of producing a semiconductor device of the present invention is applicable to a multilayer wafer for leadless chip carrier packages and breaks it on a package basis. The method begins with a step of forming a generally V-shaped groove in one major surfaces of the wafer in the direction of thickness of the wafer. A weak, cleaving portion is formed in the other major surface of the wafer in alignment with the groove. A cleaving force is exerted on the wafer to thereby form a break in the cleaving portion, so that the wafer is caused to break from the groove toward the cleaving portion in the direction of thickness of the wafer. The cleaving portion may be replaced with a strong, non-cleaving portion, in which case the break is formed in the interface between the non-cleaving portion and the wafer due to a difference in cleaving force.

摘要翻译： 本发明的半导体器件的制造方法可应用于无引线芯片载体封装的多层晶片，并以封装为基础将其破坏。 该方法开始于在晶片的一个主表面上沿晶片厚度方向形成大致V形槽的步骤。 在晶片的另一个主表面上与凹槽对准地形成弱的分离部分。 切割力施加在晶片上，从而在裂开部分形成断裂，从而使得晶片在晶片的厚度方向上从凹槽向分裂部分断裂。 切割部分可以用强的非分裂部分代替，在这种情况下，由于分裂力的差异，在非裂开部分和晶片之间的界面中形成断裂。