Epitaxial growth apparatus and epitaxial growth method
    1.
    发明授权
    Epitaxial growth apparatus and epitaxial growth method 有权
    外延生长装置和外延生长法

    公开(公告)号:US09234280B2

    公开(公告)日:2016-01-12

    申请号:US13445037

    申请日:2012-04-12

    摘要: A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.

    摘要翻译: 一种用于外延生长装置的基座支撑轴,其能够通过抑制由于基座的挠曲而导致的外延膜的面内电阻变化而形成高质量的外延膜,其中,基座支撑轴支撑基座的下部的基座 在外延生长装置中。 基座支撑轴包括与基座的中心大致同轴的支撑柱; 从所述支撑柱径向延伸到所述基座的周边部分下方的多个臂; 臂连接构件,其彼此相邻地连接臂的尖端; 以及从臂连接构件延伸的支撑销,从而支撑基座。

    STRUCTURE OF MOUNTING COWL TOP COVER
    2.
    发明申请
    STRUCTURE OF MOUNTING COWL TOP COVER 有权
    安装顶盖的结构

    公开(公告)号:US20100187862A1

    公开(公告)日:2010-07-29

    申请号:US12690215

    申请日:2010-01-20

    IPC分类号: B62D25/08

    摘要: A structure of mounting a cowl top cover which has a back end portion mounted to a lower end portion of a front windshield panel is disclosed. The structure includes: a surface portion disposed at the back end portion of cowl top cover, the surface portion covering a surface of lower end portion of front windshield panel and extending in a vehicular widthwise direction; a plurality of clip portions disposed at back end portion of cowl top cover, the lower end portion of front windshield panel being clamped between the clip portions and the surface portion in a plurality of places along the direction in which the surface portion extends; and a thin plate portion disposed at back end portion of cowl top cover, wherein the thin plate portion connecting plurality of clip portions with each other is thinner than surface portion and is spaced apart from front windshield panel.

    摘要翻译: 公开了一种安装前罩部分的前罩部安装在前挡风玻璃面板的下端部的整流罩顶盖的结构。 该结构包括:表面部分,设置在整流罩顶盖的后端部分,该表面部分覆盖前挡风玻璃面板的下端部分的表面,并沿车宽方向延伸; 多个夹子部分设置在整流罩顶盖的后端部分,前挡风玻璃面板的下端部沿着表面部分延伸的方向在多个位置夹持在夹子部分和表面部分之间; 以及设置在整流罩顶盖的后端部的薄板部,其中将多个夹部彼此连接的薄板部分比表面部分薄,并与前挡风玻璃板间隔开。

    Design Method for Industrial Product Using Clothoid Curve, Industrial Products Designed by the Design Method, and Method and Device for Numerical Control Using the Clothoid Curve
    3.
    发明申请
    Design Method for Industrial Product Using Clothoid Curve, Industrial Products Designed by the Design Method, and Method and Device for Numerical Control Using the Clothoid Curve 有权
    设计方法工业产品设计方法,设计方法设计的工业产品及使用干燥曲线进行数值控制的方法与装置

    公开(公告)号:US20070293962A1

    公开(公告)日:2007-12-20

    申请号:US10590704

    申请日:2005-02-14

    IPC分类号: G05B19/18 G06F19/00

    摘要: A. [1] A trajectory of motion of the mechanical element is designed by using a three-dimensional curve (referred to as a three-dimensional clothoid curve) in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable. B. A trajectory of a machine tool or a contour shape of a workpiece is expressed by using a three-dimensional curve (referred to as a three-dimensional clothoid curve) in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable to control motion of the machine tool based on the three-dimensional curve.

    摘要翻译: 通过使用三维曲线(称为三维回旋曲线)来设计机械元件的运动轨迹,其中给出切向方向上的俯仰角和偏航角中的每一个 通过曲线长度或曲线长度变量的二次表达式。 B.通过使用三维曲线(称为三维回旋曲线)来表示工件的机床轨迹或工件的轮廓形状,其中在切向方向上的俯仰角和偏航角中的每一个 由曲线长度或曲线长度变量的二次表达式给出,以基于三维曲线来控制机床的运动。

    Apparatus, system and method for design support for providing information for bi-directional references between design information and geometry information
    4.
    发明授权
    Apparatus, system and method for design support for providing information for bi-directional references between design information and geometry information 失效
    用于设计支持的设备,系统和方法,用于为设计信息和几何信息之间的双向参考提供信息

    公开(公告)号:US07079907B2

    公开(公告)日:2006-07-18

    申请号:US10077157

    申请日:2002-02-15

    IPC分类号: G06F19/00

    CPC分类号: G06F17/50

    摘要: A design support system comprising a digital document related module for storing a digital document used for a design operation, a geometry data related module for storing geometry data designed during the design operation, and a reference relationship related module for generating reference relationship information (a digital document that includes a reference relationship to geometry data, or geometry data that include a reference relationship to a digital document) that is established between a specific digital document and specific geometry data. To display the reference relationship from the digital document to the geometry data, the digital document related module calls up and displays the digital document, while adding and displaying information to the digital document concerning a link to the reference target geometry data.

    摘要翻译: 一种设计支持系统,包括用于存储用于设计操作的数字文档的数字文档相关模块,用于存储在设计操作期间设计的几何数据的几何数据相关模块以及用于产生参考关系信息的参考关系相关模块(数字 包括与几何数据的参考关系的文档,或包括与数字文档的参考关系的几何数据),其在特定数字文档和特定几何数据之间建立。 为了显示从数字文档到几何数据的参考关系,数字文档相关模块调用并显示数字文档,同时向数字文档添加和显示关于参考目标几何数据的链接的信息。

    Epitaxial growth apparatus and epitaxial growth method
    7.
    发明授权
    Epitaxial growth apparatus and epitaxial growth method 有权
    外延生长装置和外延生长法

    公开(公告)号:US09273414B2

    公开(公告)日:2016-03-01

    申请号:US12945299

    申请日:2010-11-12

    IPC分类号: C30B25/02 C30B29/06 C30B25/12

    CPC分类号: C30B29/06 C30B25/02 C30B25/12

    摘要: An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.

    摘要翻译: 本发明的目的是提供一种能够抑制由于感受器的偏转引起的半导体晶片的面内温度变化的外延生长装置和外延生长方法,并且制造高质量的外延晶片。 具体地说,本发明提供了一种用于在放置在具有用于处理气体的供给口和排气口的室中的半导体晶片上形成外延膜的外延生长装置,该设备包括:用于将半导体晶片放置在其内的基座 房间 以及用于将基座支撑在基座的下部的基座支撑轴,其中,所述基座支撑轴具有与所述基座的中心基本同轴的支撑柱,以及从所述基座的顶端径向延伸的至少四个支撑臂 支撑柱之间具有相等的间隔。

    EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD
    8.
    发明申请
    EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD 有权
    外来生长装置和外来生长方法

    公开(公告)号:US20120285382A1

    公开(公告)日:2012-11-15

    申请号:US13445037

    申请日:2012-04-12

    IPC分类号: C23C16/458

    摘要: A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.

    摘要翻译: 一种用于外延生长装置的基座支撑轴,其能够通过抑制由于基座的挠曲而导致的外延膜的面内电阻变化而形成高质量的外延膜,其中,基座支撑轴支撑基座的下部的基座 在外延生长装置中。 基座支撑轴包括与基座的中心大致同轴的支撑柱; 从所述支撑柱径向延伸到所述基座的周边部分下方的多个臂; 臂连接构件,其彼此相邻地连接臂的尖端; 以及从臂连接构件延伸的支撑销,从而支撑基座。

    Structure of mounting cowl top cover
    9.
    发明授权
    Structure of mounting cowl top cover 有权
    安装罩顶盖的结构

    公开(公告)号:US08152227B2

    公开(公告)日:2012-04-10

    申请号:US12690215

    申请日:2010-01-20

    IPC分类号: B62D25/08

    摘要: A structure of mounting a cowl top cover which has a back end portion mounted to a lower end portion of a front windshield panel. The structure includes: a surface portion disposed at the back end portion of cowl top cover, the surface portion covering a surface of lower end portion of front windshield panel and extending in a vehicular widthwise direction; a plurality of clip portions disposed at back end portion of cowl top cover, the lower end portion of front windshield panel being clamped between the clip portions and the surface portion in a plurality of places along the direction in which the surface portion extends; and a thin plate portion disposed at back end portion of cowl top cover, wherein the thin plate portion connecting plurality of clip portions with each other is thinner than surface portion and is spaced apart from front windshield panel.

    摘要翻译: 一种安装整流罩顶盖的结构,其具有安装到前挡风玻璃面板的下端部的后端部。 该结构包括:表面部分,设置在整流罩顶盖的后端部分,该表面部分覆盖前挡风玻璃面板的下端部分的表面,并沿车宽方向延伸; 多个夹子部分设置在整流罩顶盖的后端部分,前挡风玻璃面板的下端部沿着表面部分延伸的方向在多个位置夹持在夹子部分和表面部分之间; 以及设置在整流罩顶盖的后端部的薄板部,其中将多个夹部彼此连接的薄板部分比表面部分薄,并与前挡风玻璃板间隔开。

    EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD
    10.
    发明申请
    EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD 有权
    外来生长装置和外来生长方法

    公开(公告)号:US20110114017A1

    公开(公告)日:2011-05-19

    申请号:US12945299

    申请日:2010-11-12

    IPC分类号: C30B23/06 C23C16/00

    CPC分类号: C30B29/06 C30B25/02 C30B25/12

    摘要: An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.

    摘要翻译: 本发明的目的是提供一种能够抑制由于感受器的偏转引起的半导体晶片的面内温度变化的外延生长装置和外延生长方法,并且制造高质量的外延晶片。 具体地说,本发明提供了一种用于在放置在具有用于处理气体的供给口和排气口的室中的半导体晶片上形成外延膜的外延生长装置,该设备包括:用于将半导体晶片放置在其内的基座 房间 以及用于将基座支撑在基座的下部的基座支撑轴,其中,所述基座支撑轴具有与所述基座的中心基本同轴的支撑柱,以及从所述基座的顶端径向延伸的至少四个支撑臂 支撑柱之间具有相等的间隔。