摘要:
A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.
摘要:
A structure of mounting a cowl top cover which has a back end portion mounted to a lower end portion of a front windshield panel is disclosed. The structure includes: a surface portion disposed at the back end portion of cowl top cover, the surface portion covering a surface of lower end portion of front windshield panel and extending in a vehicular widthwise direction; a plurality of clip portions disposed at back end portion of cowl top cover, the lower end portion of front windshield panel being clamped between the clip portions and the surface portion in a plurality of places along the direction in which the surface portion extends; and a thin plate portion disposed at back end portion of cowl top cover, wherein the thin plate portion connecting plurality of clip portions with each other is thinner than surface portion and is spaced apart from front windshield panel.
摘要:
A. [1] A trajectory of motion of the mechanical element is designed by using a three-dimensional curve (referred to as a three-dimensional clothoid curve) in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable. B. A trajectory of a machine tool or a contour shape of a workpiece is expressed by using a three-dimensional curve (referred to as a three-dimensional clothoid curve) in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable to control motion of the machine tool based on the three-dimensional curve.
摘要:
A design support system comprising a digital document related module for storing a digital document used for a design operation, a geometry data related module for storing geometry data designed during the design operation, and a reference relationship related module for generating reference relationship information (a digital document that includes a reference relationship to geometry data, or geometry data that include a reference relationship to a digital document) that is established between a specific digital document and specific geometry data. To display the reference relationship from the digital document to the geometry data, the digital document related module calls up and displays the digital document, while adding and displaying information to the digital document concerning a link to the reference target geometry data.
摘要:
An agent containing a lubricant, a non-ionic surfactant and an amphoteric surfactant of a specified kind in specified amounts is applied at a specified rate to spun synthetic fibers before draft and false-twisting processes are simultaneously carried on these fibers such that false-twisted yarns with a high quality without dyeing specks and without abnormal tension variations can be obtained.
摘要:
An agent containing a polyether compound, a straight-chain polyether modified polyorganosiloxane of a specified kind and an ionic surfactant at specified ratios are applied at a specified rate to synthetic fibers subjected to a heat treatment such as false twisting.
摘要:
An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.
摘要:
A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.
摘要:
A structure of mounting a cowl top cover which has a back end portion mounted to a lower end portion of a front windshield panel. The structure includes: a surface portion disposed at the back end portion of cowl top cover, the surface portion covering a surface of lower end portion of front windshield panel and extending in a vehicular widthwise direction; a plurality of clip portions disposed at back end portion of cowl top cover, the lower end portion of front windshield panel being clamped between the clip portions and the surface portion in a plurality of places along the direction in which the surface portion extends; and a thin plate portion disposed at back end portion of cowl top cover, wherein the thin plate portion connecting plurality of clip portions with each other is thinner than surface portion and is spaced apart from front windshield panel.
摘要:
An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.