公开(公告)号：US07981794B2

公开(公告)日：2011-07-19

申请号：US12445813

申请日：2007-08-07

申请人： Kensaku Narushima ,  Fumitaka Amano ,  Satoshi Wakabayashi

发明人： Kensaku Narushima ,  Fumitaka Amano ,  Satoshi Wakabayashi

IPC分类号： H01L21/285

CPC分类号： C23C16/34 ,  C23C16/14 ,  C23C16/45512 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76843

摘要： A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.

摘要翻译： 在低温下形成包含钛膜的阻挡层，并且在钛膜和基底之间的界面处自适应地形成TiSix膜。 在形成TiSix膜507时，不引入氩气重复以下步骤：将钛化合物气体引入处理室以将钛化合物气体吸附到硅衬底502的硅表面上的第一步骤; 第二步，停止将钛化合物气体引入处理室并除去残留在处理室中的钛化合物气体; 以及在处理室中产生等离子体同时将氢气引入处理室中以减少吸附在硅表面上的钛化合物气体并与硅表面中的硅反应以形成TiSix膜507的第三步骤。

公开(公告)号：US20100304561A1

公开(公告)日：2010-12-02

申请号：US12445813

申请日：2007-08-07

申请人： Kensaku Narushima ,  Fumitaka Amano ,  Satoshi Wakabayashi

发明人： Kensaku Narushima ,  Fumitaka Amano ,  Satoshi Wakabayashi

IPC分类号： H01L21/285 ,  H05H1/00

CPC分类号： C23C16/34 ,  C23C16/14 ,  C23C16/45512 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76843

摘要： A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.

摘要翻译： 在低温下形成包含钛膜的阻挡层，并且在钛膜和基底之间的界面处自适应地形成TiSix膜。 在形成TiSix膜507时，不引入氩气重复以下步骤：将钛化合物气体引入处理室以将钛化合物气体吸附到硅衬底502的硅表面上的第一步骤; 第二步，停止将钛化合物气体引入处理室并除去残留在处理室中的钛化合物气体; 以及在处理室中产生等离子体同时将氢气引入处理室中以减少吸附在硅表面上的钛化合物气体并与硅表面中的硅反应以形成TiSix膜507的第三步骤。