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公开(公告)号：US20100304561A1
公开(公告)日：2010-12-02
申请号：US12445813
申请日：2007-08-07
IPC分类号： H01L21/285 , H05H1/00
CPC分类号： C23C16/34 , C23C16/14 , C23C16/45512 , C23C16/4554 , C23C16/45542 , H01L21/28518 , H01L21/28562 , H01L21/67207 , H01L21/76814 , H01L21/76843
摘要： A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.
摘要翻译： 在低温下形成包含钛膜的阻挡层，并且在钛膜和基底之间的界面处自适应地形成TiSix膜。 在形成TiSix膜507时，不引入氩气重复以下步骤：将钛化合物气体引入处理室以将钛化合物气体吸附到硅衬底502的硅表面上的第一步骤; 第二步，停止将钛化合物气体引入处理室并除去残留在处理室中的钛化合物气体; 以及在处理室中产生等离子体同时将氢气引入处理室中以减少吸附在硅表面上的钛化合物气体并与硅表面中的硅反应以形成TiSix膜507的第三步骤。
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公开(公告)号：US07981794B2
公开(公告)日：2011-07-19
申请号：US12445813
申请日：2007-08-07
IPC分类号： H01L21/285
CPC分类号： C23C16/34 , C23C16/14 , C23C16/45512 , C23C16/4554 , C23C16/45542 , H01L21/28518 , H01L21/28562 , H01L21/67207 , H01L21/76814 , H01L21/76843
摘要： A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.
摘要翻译： 在低温下形成包含钛膜的阻挡层，并且在钛膜和基底之间的界面处自适应地形成TiSix膜。 在形成TiSix膜507时，不引入氩气重复以下步骤：将钛化合物气体引入处理室以将钛化合物气体吸附到硅衬底502的硅表面上的第一步骤; 第二步，停止将钛化合物气体引入处理室并除去残留在处理室中的钛化合物气体; 以及在处理室中产生等离子体同时将氢气引入处理室中以减少吸附在硅表面上的钛化合物气体并与硅表面中的硅反应以形成TiSix膜507的第三步骤。
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公开(公告)号：US08257790B2
公开(公告)日：2012-09-04
申请号：US12280044
申请日：2007-02-21
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。
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公开(公告)号：US20100081292A1
公开(公告)日：2010-04-01
申请号：US11993506
申请日：2006-06-20
IPC分类号： H01L21/3105
CPC分类号： C23C8/24 , C23C8/26 , C23C8/36 , C23C8/38 , C23C14/00 , C23C16/14 , C23C16/4401 , C23C16/4404 , C23C16/56 , G11B5/84
摘要： A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH3 and H2 to the chamber, in which a coating layer deposited on the interior of the chamber and the showerhead contain nickel (Ni). When the apparatus is utilized to practice a method comprising exposing an object W to a gas comprising a mixture consisting of NH3 and H2, the H2/NH3 gas flow rate ratio and the temperature are controlled so that the reaction of nickel contained in the coating layer deposited on the interior of the chamber and the showerhead is suppressed.
摘要翻译： 气体输送装置包括：围绕要处理的基板的室; 设置在室内的淋浴头; 以及气体供应装置，其将包含NH 3和H 2的混合物的气体供应到所述室中，其中沉积在所述室的内部的涂层和所述喷头包含镍（Ni）。 当该装置用于实施包括将物体W暴露于包括由NH 3和H 2组成的混合物的气体的方法时，控制H 2 / NH 3气体流速比和温度，使得包含在涂层中的镍的反应 沉积在室的内部并且喷头被抑制。
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公开(公告)号：US20100227062A1
公开(公告)日：2010-09-09
申请号：US12280044
申请日：2007-02-21
IPC分类号： C23C16/22
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。
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6.发明申请Method for Forming Ti Film and Tin Film, Contact Structure, Computer Readable Storing Medium and Computer Program 失效形成Ti膜和锡膜的方法，接触结构，计算机可读存储介质和计算机程序公开(公告)号：US20070257372A1
公开(公告)日：2007-11-08
申请号：US11547977
申请日：2005-04-08
CPC分类号： H01L21/76846 , C23C16/0281 , C23C16/34 , H01J37/321 , H01L21/02063 , H01L21/28556 , H01L21/32051 , H01L21/76814 , H01L21/76856 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
摘要翻译： 在作为底层的硅化镍膜的表面上进行清洁处理。 然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。 然后，将Ti膜氮化。 然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。
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公开(公告)号：US20050233093A1
公开(公告)日：2005-10-20
申请号：US11143718
申请日：2005-06-03
IPC分类号： C23C16/14 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/50 , H01L21/28 , H01L21/285 , H05H1/24 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译： 在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。 第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。 第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。
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公开(公告)号：US08263181B2
公开(公告)日：2012-09-11
申请号：US12426047
申请日：2009-04-17
IPC分类号： C23C16/06
CPC分类号： C23C16/4404 , C23C16/14 , C23C16/4405 , C23C16/45565 , C23C16/56 , H01L21/28556
摘要： A Ti-based film forming method includes a step (step 1) of cleaning inside a chamber by introducing a cleaning gas containing fluorine into the chamber in a state where a wafer W is not provided on a susceptor; a step (step 2) of heating the susceptor in a state where the wafer W is not provided on the susceptor, injecting a processing gas containing Ti from a shower head into the chamber, and forming a pre-coated film at least on the surface of the shower head; and a step (step 3) of mounting the wafer W on the susceptor 2 in a state where the susceptor is heated, supplying a processing gas into the chamber 1 and forming a Ti-based film on the wafer W. The pre-coated film forming step is performed at a temperature lower than that in the film forming step.
摘要翻译： Ti系成膜方法包括：在不在基座上设置晶片W的状态下，通过将含有氟的清洗气体引入到室内的室内进行清洗的工序（工序1） 在不在基座上设置晶片W的状态下加热基座的步骤（步骤2），将来自喷淋头的含Ti的处理气体注入到室内，并且至少在表面上形成预涂膜 的淋浴头; 以及在加热基座的状态下将晶片W安装在基座2上的步骤（步骤3），将处理气体供给到室1中，并在晶片W上形成Ti基膜。预涂膜 在低于成膜步骤的温度下进行形成步骤。
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公开(公告)号：US07906442B2
公开(公告)日：2011-03-15
申请号：US11993506
申请日：2006-06-20
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C8/24 , C23C8/26 , C23C8/36 , C23C8/38 , C23C14/00 , C23C16/14 , C23C16/4401 , C23C16/4404 , C23C16/56 , G11B5/84
摘要： A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH3 and H2 to the chamber, in which a coating layer deposited on the interior of the chamber and the showerhead contain nickel (Ni). When the apparatus is utilized to practice a method comprising exposing an object W to a gas comprising a mixture consisting of NH3 and H2, the H2/NH3 gas flow rate ratio and the temperature are controlled so that the reaction of nickel contained in the coating layer deposited on the interior of the chamber and the showerhead is suppressed.
摘要翻译： 气体输送装置包括：围绕要处理的基板的室; 设置在室内的淋浴头; 以及气体供应装置，其将包含NH 3和H 2的混合物的气体供应到所述室中，其中沉积在所述室的内部的涂层和所述喷头包含镍（Ni）。 当该装置用于实施包括将物体W暴露于包括由NH 3和H 2组成的混合物的气体的方法时，控制H 2 / NH 3气体流速比和温度，使得包含在涂层中的镍的反应 沉积在室的内部并且喷头被抑制。
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公开(公告)号：US20100240216A1
公开(公告)日：2010-09-23
申请号：US12789516
申请日：2010-05-28
IPC分类号： H01L21/3205
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译： 在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。 第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。 第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。
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