公开(公告)号：US20240355624A1

公开(公告)日：2024-10-24

申请号：US18684591

申请日：2022-08-22

Applicant: Lam Research Corporation

Inventor： Nuoya Yang ,  Pulkit Agarwal ,  Jennifer Leigh Petraglia ,  Ching-Yun Chang ,  Jeongseok Ha

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01L21/0337 ,  C23C16/26 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0228

Abstract: Methods and apparatuses for forming spacer material for multiple patterning schemes by depositing a sacrificial layer on a carbon-containing mandrel during a multiple patterning scheme prior to depositing a spacer material and removing the sacrificial layer while depositing a spacer on the carbon-containing mandrel, and/or by forming at least initial layers of a spacer material directly on a mandrel using a soft atomic layer deposition process involving plasma treatment during the atomic layer deposition are provided.

公开(公告)号：US12110589B2

公开(公告)日：2024-10-08

申请号：US16631979

申请日：2018-08-01

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Wei Liu ,  Li-Qun Xia

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/403 ,  C23C16/4554 ,  C23C16/45548 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/0234

Abstract: Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.

公开(公告)号：US12009217B2

公开(公告)日：2024-06-11

申请号：US17593071

申请日：2020-03-04

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Takahashi ,  Yu Nunoshige

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/28568 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/338

Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

公开(公告)号：US11959167B2

公开(公告)日：2024-04-16

申请号：US17834633

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

IPC: C23C16/16 ,  C23C16/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768

CPC classification number: C23C16/16 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/18 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20230411147A1

公开(公告)日：2023-12-21

申请号：US18334058

申请日：2023-06-13

Applicant: ASM IP Holding, B.V.

Inventor： Jihee Jeon ,  Timothee Blanquart ,  Viljami Pore ,  Charles Dezelah

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02214 ,  H01J37/32357 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01J2237/332 ,  H01J2237/2001

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

公开(公告)号：US20180308688A1

公开(公告)日：2018-10-25

申请号：US15956410

申请日：2018-04-18

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A film deposition method is provided. In the method, an aminosilane gas is adsorbed on a surface of a substrate including a recess pattern. Next, a silicon oxide film is deposited on the surface of the substrate including the recess pattern by oxidizing the aminosilane gas adsorbed on the surface of the substrate using an oxidation gas. Then, the silicon oxide film is modified by supplying a mixed gas containing oxygen, argon and nitrogen to the silicon oxide film while activating the mixed gas by plasma.

公开(公告)号：US10062564B2

公开(公告)日：2018-08-28

申请号：US14970372

申请日：2015-12-15

Applicant: Tokyo Electron Limited

Inventor： Kandabara N. Tapily

IPC: H01L21/02 ,  H01L21/30 ,  H01L21/768 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/511

CPC classification number: H01L21/02315 ,  C23C16/045 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/511 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02296 ,  H01L21/02299 ,  H01L21/3003 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76883

Abstract: According to one embodiment of the invention, a method is provided for selective surface deposition. In one example, the method includes providing a substrate containing a first material having a first surface and a second material having a second surface, forming a modified first surface and a modified second surface by exposing the first surface and the second surface to hydrogen gas excited by a plasma source, and selectively depositing a film on the modified second surface but not on the modified first surface.

公开(公告)号：US10002755B2

公开(公告)日：2018-06-19

申请号：US15384028

申请日：2016-12-19

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20180130642A1

公开(公告)日：2018-05-10

申请号：US15805466

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01J37/32449 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32935

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US20180005814A1

公开(公告)日：2018-01-04

申请号：US15201221

申请日：2016-07-01

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Adrien LaVoie ,  Ishtak Karim ,  Jun Qian ,  Frank L. Pasquale ,  Bart J. van Schravendijk

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C23C16/511 ,  C23C16/509 ,  C23C16/32 ,  H01J37/32

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/509 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.