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公开(公告)号:US07936065B2
公开(公告)日:2011-05-03
申请号:US11808465
申请日:2007-06-11
申请人: Yoshihito Mizuno , Masahiro Kinokuni , Shinji Koike , Masahiro Matsumoto , Fumitsugu Yanagihori
发明人: Yoshihito Mizuno , Masahiro Kinokuni , Shinji Koike , Masahiro Matsumoto , Fumitsugu Yanagihori
IPC分类号: H01L23/48
CPC分类号: H01L29/7397 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/41708 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/00
摘要: A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.
摘要翻译: 半导体器件设置有硅衬底,具有用于将硅衬底焊接到陶瓷衬底的表面,以及与硅衬底的表面接触的电极。 电极包括第一导体层,第二导体层和第三导体层。 第一导体层与硅衬底的表面接触并且包括铝和硅。 第二导体层与第一导体层接触并包括钛。 第三导体层通过第二导体层与第一导体层分离并且包括镍。
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公开(公告)号:US20070296080A1
公开(公告)日:2007-12-27
申请号:US11808465
申请日:2007-06-11
申请人: Yoshihito Mizuno , Masahiro Kinokuni , Shinji Koike , Masahiro Matsumoto , Fumitsugu Yanagihori
发明人: Yoshihito Mizuno , Masahiro Kinokuni , Shinji Koike , Masahiro Matsumoto , Fumitsugu Yanagihori
IPC分类号: H01L23/48
CPC分类号: H01L29/7397 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/41708 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/00
摘要: A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.
摘要翻译: 半导体器件设置有硅衬底,具有用于将硅衬底焊接到陶瓷衬底的表面,以及与硅衬底的表面接触的电极。 电极包括第一导体层,第二导体层和第三导体层。 第一导体层与硅衬底的表面接触并且包括铝和硅。 第二导体层与第一导体层接触并包括钛。 第三导体层通过第二导体层与第一导体层分离并且包括镍。
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