Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08558381B2

    公开(公告)日:2013-10-15

    申请号:US13239800

    申请日:2011-09-22

    申请人: Yoshihito Mizuno

    发明人: Yoshihito Mizuno

    IPC分类号: H01L23/48

    摘要: The present teachings provides a semiconductor device which has a semiconductor substrate, and a lower electrode including a first layer in contact with a lower surface of the semiconductor substrate, a second layer in contact with a lower surface of the first layer, and a third layer stacked at a position farther from the semiconductor substrate than the second layer, wherein the first layer is an aluminum layer containing silicon, the second layer is a layer including silicon as a primary component, and the third layer is a solder joint layer.

    摘要翻译: 本教导提供了一种半导体器件,其具有半导体衬底,以及包括与半导体衬底的下表面接触的第一层的下电极,与第一层的下表面接触的第二层,以及第三层 堆叠在比第二层更远离半导体衬底的位置,其中第一层是含有硅的铝层,第二层是包括硅作为主要成分的层,第三层是焊料层。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20120007241A1

    公开(公告)日:2012-01-12

    申请号:US13239800

    申请日:2011-09-22

    申请人: Yoshihito MIZUNO

    发明人: Yoshihito MIZUNO

    IPC分类号: H01L23/482

    摘要: The present teachings provides a semiconductor device which has a semiconductor substrate, and a lower electrode including a first layer in contact with a lower surface of the semiconductor substrate, a second layer in contact with a lower surface of the first layer, and a third layer stacked at a position farther from the semiconductor substrate than the second layer, wherein the first layer is an aluminum layer containing silicon, the second layer is a layer including silicon as a primary component, and the third layer is a solder joint layer.

    摘要翻译: 本教导提供了一种半导体器件,其具有半导体衬底,以及包括与半导体衬底的下表面接触的第一层的下电极,与第一层的下表面接触的第二层,以及第三层 堆叠在比第二层更远离半导体衬底的位置,其中第一层是含有硅的铝层,第二层是包括硅作为主要成分的层,第三层是焊料层。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20140197514A1

    公开(公告)日:2014-07-17

    申请号:US14238159

    申请日:2011-09-07

    申请人: Yoshihito Mizuno

    发明人: Yoshihito Mizuno

    IPC分类号: H01L35/20 H01L35/34 H01L35/28

    摘要: A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film.

    摘要翻译: 提供了配备有半导体衬底,复合金属膜和检测端子的半导体器件。 复合金属膜形成在半导体基板的表面或背面上,并且具有第一金属膜和与第一金属膜接合并且具有与第一金属膜不同的塞贝克系数的第二金属膜。 检测端子可以检测第一金属膜和第二金属膜之间的电位差。

    Semiconductor device and method of manufacturing the same
    9.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US09595655B2

    公开(公告)日:2017-03-14

    申请号:US14238159

    申请日:2011-09-07

    申请人: Yoshihito Mizuno

    发明人: Yoshihito Mizuno

    摘要: A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film.

    摘要翻译: 提供了配备有半导体衬底,复合金属膜和检测端子的半导体器件。 复合金属膜形成在半导体基板的表面或背面上,并且具有第一金属膜和与第一金属膜接合并且具有与第一金属膜不同的塞贝克系数的第二金属膜。 检测端子可以检测第一金属膜和第二金属膜之间的电位差。