公开(公告)号：US07936065B2

公开(公告)日：2011-05-03

申请号：US11808465

申请日：2007-06-11

申请人： Yoshihito Mizuno ,  Masahiro Kinokuni ,  Shinji Koike ,  Masahiro Matsumoto ,  Fumitsugu Yanagihori

发明人： Yoshihito Mizuno ,  Masahiro Kinokuni ,  Shinji Koike ,  Masahiro Matsumoto ,  Fumitsugu Yanagihori

IPC分类号： H01L23/48

CPC分类号： H01L29/7397 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/41708 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/00

摘要： A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.

摘要翻译： 半导体器件设置有硅衬底，具有用于将硅衬底焊接到陶瓷衬底的表面，以及与硅衬底的表面接触的电极。 电极包括第一导体层，第二导体层和第三导体层。 第一导体层与硅衬底的表面接触并且包括铝和硅。 第二导体层与第一导体层接触并包括钛。 第三导体层通过第二导体层与第一导体层分离并且包括镍。

公开(公告)号：US20070296080A1

公开(公告)日：2007-12-27

申请号：US11808465

申请日：2007-06-11

申请人： Yoshihito Mizuno ,  Masahiro Kinokuni ,  Shinji Koike ,  Masahiro Matsumoto ,  Fumitsugu Yanagihori

发明人： Yoshihito Mizuno ,  Masahiro Kinokuni ,  Shinji Koike ,  Masahiro Matsumoto ,  Fumitsugu Yanagihori

IPC分类号： H01L23/48

CPC分类号： H01L29/7397 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/41708 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/00

摘要： A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.

摘要翻译： 半导体器件设置有硅衬底，具有用于将硅衬底焊接到陶瓷衬底的表面，以及与硅衬底的表面接触的电极。 电极包括第一导体层，第二导体层和第三导体层。 第一导体层与硅衬底的表面接触并且包括铝和硅。 第二导体层与第一导体层接触并包括钛。 第三导体层通过第二导体层与第一导体层分离并且包括镍。

公开(公告)号：US08836348B2

公开(公告)日：2014-09-16

申请号：US13382395

申请日：2010-07-15

申请人： Hiroshi Iwasawa ,  Masahiro Matsumoto ,  Toshiaki Nakamura

发明人： Hiroshi Iwasawa ,  Masahiro Matsumoto ,  Toshiaki Nakamura

IPC分类号： G01R27/26 ,  G01P15/125 ,  G01P15/08 ,  G01D5/24 ,  G01D3/028 ,  G01C19/5726

CPC分类号： G01P15/125 ,  G01C19/5726 ,  G01D3/028 ,  G01D5/24 ,  G01P15/0802

摘要： The present invention provides a high-accuracy electrostatic capacitance type physical quantity sensor and angular velocity sensor configured so as to be capable of suppressing noise derived from internal noise while maintaining resistance to externally-incoming noise. A detection element 10 has a movable mass 18 supported displaceably by a physical quantity given from the outside, and a detection electrode Ef. A shield wire 16 is disposed around wirings connected to the input of a capacitance detection circuit 30 and is connected to a dc potential of low impedance. A value Cin of an input capacitance relative to a fixed potential of low impedance at a portion at which the detection element 10 is connected with the capacitance detection circuit 30 is set to fall within a range of 1.5 pF

摘要翻译： 本发明提供了一种高精度静电电容型物理量传感器和角速度传感器，其被配置为能够抑制由内部噪声产生的噪声，同时保持对外来噪声的抵抗。 检测元件10具有通过从外部给出的物理量可移动地支撑的可移动质量块18和检测电极Ef。 屏蔽线16设置在连接到电容检测电路30的输入端的布线周围，并连接到低阻抗的直流电位。 将检测元件10与电容检测电路30连接的部分处的输入电容相对于低阻抗的固定电位的值Cin设定为1.5pF

公开(公告)号：US08813556B2

公开(公告)日：2014-08-26

申请号：US13337398

申请日：2011-12-27

申请人： Masahiro Matsumoto ,  Hiroshi Nakano ,  Keiji Hanzawa ,  Satoshi Asano

发明人： Masahiro Matsumoto ,  Hiroshi Nakano ,  Keiji Hanzawa ,  Satoshi Asano

IPC分类号： G01F1/68

CPC分类号： G01K13/02 ,  G01F1/6842 ,  G01F5/00 ,  G01F15/185 ,  G01K1/16 ,  G01K2205/02

摘要： An intake temperature sensor capable of precisely detecting the temperature of intake at high speed even in a low air mass flow zone is provided. In an intake temperature sensor having a temperature detecting element 6 inserted in an opening provided in an intake pipe 3 to be disposed in the intake pipe, a temperature detecting element is mechanically joined with a heat sink 4 directly exposed to the flow of the intake flowing in the intake pipe, and the temperature of the intake is output based on an output obtained from the temperature detecting element. Thus, the thermal resistance of the temperature detecting element with respect to the intake flow can be reduced; therefore, the intake temperature sensor capable of precisely detecting the temperature of the intake at high speed even in the low air mass flow zone can be provided.

摘要翻译： 提供了即使在低空气质量流量区域也能够高精度地检测进气温度的进气温度传感器。 在具有插入到设置在进气管3内的进气管3中的开口中的温度检测元件6的进气温度传感器中，温度检测元件与直接暴露于进气流动的散热器4机械接合 在进气管中，并且基于从温度检测元件获得的输出来输出进气温度。 因此，可以降低温度检测元件相对于进气流的热阻; 因此，即使在低空气质量流量区域中也能够高精度地检测进气温度的进气温度传感器。

公开(公告)号：US20140159174A1

公开(公告)日：2014-06-12

申请号：US14131125

申请日：2011-07-13

申请人： Masahiro Matsumoto ,  Hiroshi Nakano ,  Keiji Hanzawa ,  Satoshi Asano

发明人： Masahiro Matsumoto ,  Hiroshi Nakano ,  Keiji Hanzawa ,  Satoshi Asano

IPC分类号： G01F1/34

CPC分类号： G01F1/34 ,  G01F1/6845 ,  G01F1/692 ,  H01L2224/48247

摘要： A flowmeter that improves a corrosion resistance is provided.The flowmeter includes a silicon substrate having a diaphragm where a heater is formed, an aluminum pad formed on a silicon substrate, an organic protective film laminated on the silicon substrate, and a mold resin that covers the silicon substrate. The diaphragm has an exposed portion exposed from the organic protective film, an adhesion surface high in adhesion property to the mold resin is laminated on the silicon substrate, and an adhesion film of the mold resin to the adhesion film is provided between the exposed portion and the aluminum pad.

摘要翻译： 提供了提高耐腐蚀性的流量计。 流量计包括具有形成有加热器的隔膜的硅基板，形成在硅基板上的铝焊盘，层叠在硅基板上的有机保护膜，以及覆盖硅基板​​的模制树脂。 隔膜具有从有机保护膜露出的露出部分，将与模制树脂粘附性高的粘合表面层合在硅基板上，并且将模制树脂与粘合膜的粘合膜设置在暴露部分和 铝垫。

公开(公告)号：US08746033B2

公开(公告)日：2014-06-10

申请号：US13126615

申请日：2009-10-21

申请人： Satoshi Asano ,  Masahiro Matsumoto ,  Yasushi Okada

发明人： Satoshi Asano ,  Masahiro Matsumoto ,  Yasushi Okada

IPC分类号： G01C19/56

CPC分类号： G01C19/5614 ,  G01C19/5776

摘要： Failures can be detected with high accuracy even the ambient temperature changes or background vibration is applied. An angular velocity sensor is composed of a vibrator which is elastically and displaceably supported on a substrate; a driving means which vibrates the vibrator in the drive axis direction horizontal to the substrate surface; a displacement detecting means in the detection axis direction, which detects a displacement of the vibrator in the detection axis direction horizontal to the substrate surface and perpendicular to the drive axis direction; an angular velocity detecting means which detects an angular velocity based on the displacement of the vibrator in the detection axis direction; a self-vibration detecting means that detects self-vibration of the vibrator, which is generated due to leakage in the detection axis direction of the vibration of the vibrator in the drive axis direction; a self-vibration feedback circuit which completely cancels the self-vibration of the vibrator; and an abnormality determining means which determines abnormality using an output from the self-vibration detecting means.

摘要翻译： 即使环境温度变化或背景振动也可以高精度地检测到故障。 角速度传感器由弹性位移地支撑在基板上的振动器构成; 驱动装置，其使所述振动器沿所述基板面的水平方向的驱动轴方向振动; 位于检测轴方向的位移检测单元，其检测振动体在检测轴方向上与基板表面水平并垂直于驱动轴方向的位移; 角速度检测装置，其基于振动器在检测轴方向上的位移检测角速度; 自动振动检测装置，其检测由于振动器在驱动轴方向的振动的检测轴方向上的泄漏而产生的振动器的自身振动; 自振反馈电路，完全抵消振动器的自振; 以及异常确定装置，其使用来自自动振动检测装置的输出来确定异常。

公开(公告)号：US08203102B2

公开(公告)日：2012-06-19

申请号：US12724399

申请日：2010-03-15

申请人： Hiroshi Nakano ,  Masamichi Yamada ,  Masahiro Matsumoto ,  Izumi Watanabe

发明人： Hiroshi Nakano ,  Masamichi Yamada ,  Masahiro Matsumoto ,  Izumi Watanabe

IPC分类号： H05B1/01

CPC分类号： G01F1/692 ,  G01F1/684 ,  G01F1/6845 ,  G01F1/698

摘要： A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.

摘要翻译： 热式流量传感器通过具有温度依赖性的耐热元件来测量流体的流量。 传感器包括：用于流量测量的多个热阻元件; 以及用于控制施加到这些热阻元件以引起其加热的电流的驱动器电路。 驱动电路被配置为感测多个耐热元件中的低温侧热电阻元件的电阻变化，并且根据下电阻元件的感测值来控制施加到多个耐热元件的电流 变异。

公开(公告)号：US08069718B2

公开(公告)日：2011-12-06

申请号：US12121520

申请日：2008-05-15

申请人： Hiroshi Nakano ,  Masahiro Matsumoto ,  Keiji Hanzawa

发明人： Hiroshi Nakano ,  Masahiro Matsumoto ,  Keiji Hanzawa

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/692 ,  G01F1/699

摘要： A simply configured thermal flowmeter can provide high measurement accuracy over a long period of time by suppressing the characteristics degradation due to adhering contaminants. On the surface of a diaphragm part, a heater resistor is formed. Temperature difference sensors through are disposed on the two sides of the heater resistor (upstream and downstream sides in the flow direction of an air stream). The temperature difference sensors are disposed upstream of the heater resistor while the temperature difference sensors are disposed downstream of the heater resistor. Outside the temperature difference sensors, heating temperature sensors are formed. Control is performed so that the temperature of the heating temperature sensors is set higher than the air stream temperature by a certain degree. Therefore, even if contaminants adhere to the sensor device, the temperature of the heating temperature sensors is held constant. Since the temperature difference sensors to detect the flow rate is located between the heating temperature sensors, the temperature change due to the contamination is small. This suppresses the characteristics degradation, making it possible to provide high measurement accuracy over a long period of time.

摘要翻译： 简单配置的热流量计可以通过抑制由于污染物附着引起的特性劣化，从而在长时间内提供高测量精度。 在隔膜部件的表面上形成加热电阻器。 温差传感器通孔设置在加热电阻器的两侧（气流的流动方向的上游侧和下游侧）。 温度差传感器设置在加热电阻器的上游，而温差传感器设置在加热电阻器的下游。 在温差传感器之外，形成加热温度传感器。 进行控制，使得加热温度传感器的温度被设定为高于气流温度一定程度。 因此，即使污染物粘附到传感器装置上，加热温度传感器的温度也保持恒定。 由于用于检测流量的温差传感器位于加热温度传感器之间，因污染导致的温度变化小。 这抑制了特性劣化，从而可以在长时间内提供高测量精度。

公开(公告)号：US07816268B2

公开(公告)日：2010-10-19

申请号：US12714039

申请日：2010-02-26

申请人： Takeshi Furusawa ,  Daisuke Kodama ,  Masahiro Matsumoto ,  Hiroshi Miyazaki

发明人： Takeshi Furusawa ,  Daisuke Kodama ,  Masahiro Matsumoto ,  Hiroshi Miyazaki

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.

公开(公告)号：US20100261334A1

公开(公告)日：2010-10-14

申请号：US12821703

申请日：2010-06-23

申请人： Hiroyuki CHIBAHARA ,  Atsushi Ishii ,  Naoki Izumi ,  Masahiro Matsumoto

发明人： Hiroyuki CHIBAHARA ,  Atsushi Ishii ,  Naoki Izumi ,  Masahiro Matsumoto

IPC分类号： H01L21/304

CPC分类号： H01L23/02 ,  H01L23/522 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.

摘要翻译： 提供了难以发生由层间电介质膜的破裂引起的密封环破坏的半导体装置，以及半导体装置的制造方法。 第一层压板包括具有第一机械强度的第一层间绝缘膜。 第二层压体包括具有高于第一机械强度的机械强度的第二层间介电膜。 第一区域包括设置在第一层压体内的第一金属层和通孔。 第二区域包括设置在第二层压体内的第二金属层和通孔。 当在平面图中看到时，第二区域与第一区域的至少一部分重叠，不通过通孔与第一区域耦合，并且在其与第一区域之间夹住第二层间电介质膜。